-
公开(公告)号：US20220171018A1
公开(公告)日：2022-06-02
申请号：US17672557
申请日：2022-02-15
发明人： Zhe Cheng , Daqing Peng , Zhiwei Zhang , Jie Peng , Bin Hu , Lungang Yun
IPC分类号： G01S7/03 , H01Q1/42 , H01Q17/00 , H01Q1/32 , G01S13/931
摘要： Embodiments provide a radio frequency apparatus including a radome, an absorber, and a radio frequency circuit board that may be used for millimeter wave radar of an intelligent automobile to reduce high-frequency radiation interference from a radio frequency chip and an antenna feeder.
-
公开(公告)号：US08916970B2
公开(公告)日：2014-12-23
申请号：US14104237
申请日：2013-12-12
发明人： Lungang Yun , An Huang , Pengbo Tian
IPC分类号： H01L23/48 , H01L21/00 , H01L23/498 , H01L23/00
CPC分类号： H01L23/49811 , H01L24/83 , H01L2924/01322 , H01L2924/1306 , H01L2924/00
摘要： Relating to electronic components, the present disclosure provides a method for welding a gold-silicon eutectic chip, and a transistor. The method for welding a gold-silicon eutectic chip includes: electroplating a gold layer with a thickness smaller than or equal to 1 micron on surfaces of a chip carrier; bonding multiple gold protrusions on the gold layer in a welding region; and rubbing a chip in the welding region at a eutectic temperature to form a welding layer. The transistor includes a chip, a chip carrier, and a middle layer connecting the chip and the chip carrier, where the welding middle layer is a welding layer obtained by using the above welding method. The present disclosure reduces an amount of gold in use and lowers a cost of gold-silicon eutectic welding to a relatively large extent, and, accordingly, cuts down the cost of a transistor.
摘要翻译： 关于电子元件，本公开提供了一种用于焊接金 - 硅共晶芯片和晶体管的方法。 用于焊接金 - 硅共晶芯片的方法包括：在芯片载体的表面上电镀厚度小于或等于1微米的金层; 在焊接区域的金层上粘合多个金突起; 并在共晶温度下在焊接区域中摩擦芯片以形成焊接层。 晶体管包括芯片，芯片载体和连接芯片和芯片载体的中间层，其中焊接中间层是通过使用上述焊接方法获得的焊接层。 本公开减少了使用中的金的量，并且相对较大程度地降低了金 - 硅共晶焊接的成本，并因此降低了晶体管的成本。
-
公开(公告)号：US20140175641A1
公开(公告)日：2014-06-26
申请号：US14104237
申请日：2013-12-12
发明人： Lungang Yun , An Huang , Pengbo Tian
IPC分类号： H01L23/498 , H01L21/02
CPC分类号： H01L23/49811 , H01L24/83 , H01L2924/01322 , H01L2924/1306 , H01L2924/00
摘要： Relating to electronic components, the present disclosure provides a method for welding a gold-silicon eutectic chip, and a transistor. The method for welding a gold-silicon eutectic chip includes: electroplating a gold layer with a thickness smaller than or equal to 1 micron on surfaces of a chip carrier; bonding multiple gold protrusions on the gold layer in a welding region; and rubbing a chip in the welding region at a eutectic temperature to form a welding layer. The transistor includes a chip, a chip carrier, and a middle layer connecting the chip and the chip carrier, where the welding middle layer is a welding layer obtained by using the above welding method. The present disclosure reduces an amount of gold in use and lowers a cost of gold-silicon eutectic welding to a relatively large extent, and, accordingly, cuts down the cost of a transistor.
摘要翻译： 关于电子元件，本公开提供了一种用于焊接金 - 硅共晶芯片和晶体管的方法。 用于焊接金 - 硅共晶芯片的方法包括：在芯片载体的表面上电镀厚度小于或等于1微米的金层; 在焊接区域的金层上粘合多个金突起; 并在共晶温度下在焊接区域中摩擦芯片以形成焊接层。 晶体管包括芯片，芯片载体和连接芯片和芯片载体的中间层，其中焊接中间层是通过使用上述焊接方法获得的焊接层。 本公开减少了使用中的金的量，并且相对较大程度地降低了金 - 硅共晶焊接的成本，并因此降低了晶体管的成本。
-
-
搜索结果
3 条记录 (耗时 0.013 秒)
