公开(公告)号：US20220171018A1

公开(公告)日：2022-06-02

申请号：US17672557

申请日：2022-02-15

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Zhe Cheng ,  Daqing Peng ,  Zhiwei Zhang ,  Jie Peng ,  Bin Hu ,  Lungang Yun

IPC: G01S7/03 ,  H01Q1/42 ,  H01Q17/00 ,  H01Q1/32 ,  G01S13/931

Abstract: Embodiments provide a radio frequency apparatus including a radome, an absorber, and a radio frequency circuit board that may be used for millimeter wave radar of an intelligent automobile to reduce high-frequency radiation interference from a radio frequency chip and an antenna feeder.

公开(公告)号：US08916970B2

公开(公告)日：2014-12-23

申请号：US14104237

申请日：2013-12-12

Applicant: Huawei Technologies Co., Ltd.

Inventor： Lungang Yun ,  An Huang ,  Pengbo Tian

IPC: H01L23/48 ,  H01L21/00 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L23/49811 ,  H01L24/83 ,  H01L2924/01322 ,  H01L2924/1306 ,  H01L2924/00

Abstract: Relating to electronic components, the present disclosure provides a method for welding a gold-silicon eutectic chip, and a transistor. The method for welding a gold-silicon eutectic chip includes: electroplating a gold layer with a thickness smaller than or equal to 1 micron on surfaces of a chip carrier; bonding multiple gold protrusions on the gold layer in a welding region; and rubbing a chip in the welding region at a eutectic temperature to form a welding layer. The transistor includes a chip, a chip carrier, and a middle layer connecting the chip and the chip carrier, where the welding middle layer is a welding layer obtained by using the above welding method. The present disclosure reduces an amount of gold in use and lowers a cost of gold-silicon eutectic welding to a relatively large extent, and, accordingly, cuts down the cost of a transistor.

Abstract translation: 关于电子元件，本公开提供了一种用于焊接金 - 硅共晶芯片和晶体管的方法。 用于焊接金 - 硅共晶芯片的方法包括：在芯片载体的表面上电镀厚度小于或等于1微米的金层; 在焊接区域的金层上粘合多个金突起; 并在共晶温度下在焊接区域中摩擦芯片以形成焊接层。 晶体管包括芯片，芯片载体和连接芯片和芯片载体的中间层，其中焊接中间层是通过使用上述焊接方法获得的焊接层。 本公开减少了使用中的金的量，并且相对较大程度地降低了金 - 硅共晶焊接的成本，并因此降低了晶体管的成本。

公开(公告)号：US20140175641A1

公开(公告)日：2014-06-26

申请号：US14104237

申请日：2013-12-12

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Lungang Yun ,  An Huang ,  Pengbo Tian

IPC: H01L23/498 ,  H01L21/02

CPC classification number: H01L23/49811 ,  H01L24/83 ,  H01L2924/01322 ,  H01L2924/1306 ,  H01L2924/00

Abstract: Relating to electronic components, the present disclosure provides a method for welding a gold-silicon eutectic chip, and a transistor. The method for welding a gold-silicon eutectic chip includes: electroplating a gold layer with a thickness smaller than or equal to 1 micron on surfaces of a chip carrier; bonding multiple gold protrusions on the gold layer in a welding region; and rubbing a chip in the welding region at a eutectic temperature to form a welding layer. The transistor includes a chip, a chip carrier, and a middle layer connecting the chip and the chip carrier, where the welding middle layer is a welding layer obtained by using the above welding method. The present disclosure reduces an amount of gold in use and lowers a cost of gold-silicon eutectic welding to a relatively large extent, and, accordingly, cuts down the cost of a transistor.

Abstract translation: 关于电子元件，本公开提供了一种用于焊接金 - 硅共晶芯片和晶体管的方法。 用于焊接金 - 硅共晶芯片的方法包括：在芯片载体的表面上电镀厚度小于或等于1微米的金层; 在焊接区域的金层上粘合多个金突起; 并在共晶温度下在焊接区域中摩擦芯片以形成焊接层。 晶体管包括芯片，芯片载体和连接芯片和芯片载体的中间层，其中焊接中间层是通过使用上述焊接方法获得的焊接层。 本公开减少了使用中的金的量，并且相对较大程度地降低了金 - 硅共晶焊接的成本，并因此降低了晶体管的成本。