公开(公告)号：US10930797B2

公开(公告)日：2021-02-23

申请号：US15374468

申请日：2016-12-09

Applicant: HYUNDAI MOTOR COMPANY

Inventor： Dae Hwan Chun ,  Youngkyun Jung ,  Nack Yong Joo ,  Junghee Park ,  Jong Seok Lee

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/16 ,  H01L21/04 ,  H01L29/08 ,  H01L29/66

Abstract: A Schottky barrier diode includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a p+ type region and a p type region disposed on the n− type layer and separated from each other; an anode disposed on the n− type layer, the p+ type region, and the p type region; and a cathode disposed on a second surface of the n+ type silicon carbide substrate. The p type region is in plural, has a hexagonal shape on the plane, and is arranged in a matrix shape, and the n− type layer disposed between the p+ type region and the p type region has a hexagonal shape on the plane and encloses the p type region.

公开(公告)号：US10727302B2

公开(公告)日：2020-07-28

申请号：US15988558

申请日：2018-05-24

Applicant: HYUNDAI MOTOR COMPANY ,  KIA MOTORS CORPORATION

Inventor： Nack Yong Joo

IPC: H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/808 ,  H01L29/16

Abstract: A semiconductor device includes: an n− type layer disposed on a first surface of a substrate; an n+ type region disposed on the n− type layer; a trench disposed on the n− type layer; a p type region disposed adjacent to a side surface of the trench and extending to a part under a lower surface of the trench; an auxiliary n+ type region disposed under the lower surface of the trench and disposed in the p type region; an auxiliary electrode disposed at the lower surface of the trench; a gate electrode separated from the auxiliary electrode and disposed on the lower surface of the trench; a source electrode disposed on the n+ type region; and a drain electrode disposed at a second surface of the substrate.

公开(公告)号：US09755020B2

公开(公告)日：2017-09-05

申请号：US15342363

申请日：2016-11-03

Applicant: HYUNDAI MOTOR COMPANY

Inventor： Dae Hwan Chun ,  Youngkyun Jung ,  Nack Yong Joo ,  Junghee Park ,  Jong Seok Lee

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/78 ,  H01L29/861

CPC classification number: H01L29/0847 ,  H01L29/0619 ,  H01L29/0684 ,  H01L29/1608 ,  H01L29/78 ,  H01L29/7828

Abstract: A semiconductor device includes a first n− type layer and a second n− type layer that are sequentially disposed on a first surface of an n+ type silicon carbide substrate; a first trench and a second trench that are disposed at the second n− type layer and are spaced apart from each other; a p type region surrounding a lateral surface and a lower surface of the first trench; an n+ type region disposed on the p type region and the second n− type layer; a gate insulating layer disposed in the second trench; a gate electrode disposed on the gate insulating layer; an oxide layer disposed on the gate electrode; a source electrode disposed on the oxide layer and the n+ type region disposed in the first trench; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate.