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公开(公告)号：US10330608B2
公开(公告)日：2019-06-25
申请号：US13469339
申请日：2012-05-11
申请人： Haiguang Chen , Jaydeep K. Sinha , Sergey Kamensky
发明人： Haiguang Chen , Jaydeep K. Sinha , Sergey Kamensky
摘要： Systems and methods for providing micro defect inspection capabilities for optical systems such as wafer metrology tools and interferometer systems are disclosed. The systems and methods in accordance with the present disclosure may detect, classify and quantify wafer surface features, wherein the detected defects are classified and the important defect metrology information of height/depth, area and volume is reported. The systems and methods in accordance with the present disclosure therefore provide more values for quantifying the negative effect of these defects on the wafer quality.
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2.发明申请SYSTEMS AND METHODS FOR WAFER SURFACE FEATURE DETECTION, CLASSIFICATION AND QUANTIFICATION WITH WAFER GEOMETRY METROLOGY TOOLS 审中-公开用于测量表面特征的系统和方法检测，分类和定量与WAFER GEOMETRY计量工具公开(公告)号：US20130304399A1
公开(公告)日：2013-11-14
申请号：US13469339
申请日：2012-05-11
申请人： Haiguang Chen , Jaydeep K. Sinha , Sergey Kamensky
发明人： Haiguang Chen , Jaydeep K. Sinha , Sergey Kamensky
IPC分类号： G06F19/00
CPC分类号： G01N21/9501 , G01B11/02 , G01N21/8851 , G01N21/956 , G01N2021/8864 , G06T7/0004 , G06T7/12 , G06T7/62 , G06T2207/30148 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for providing micro defect inspection capabilities for optical systems such as wafer metrology tools and interferometer systems are disclosed. The systems and methods in accordance with the present disclosure may detect, classify and quantify wafer surface features, wherein the detected defects are classified and the important defect metrology information of height/depth, area and volume is reported. The systems and methods in accordance with the present disclosure therefore provide more values for quantifying the negative effect of these defects on the wafer quality.
摘要翻译： 公开了用于为诸如晶片计量工具和干涉仪系统的光学系统提供微缺陷检测能力的系统和方法。 根据本公开的系统和方法可以检测，分类和量化晶片表面特征，其中检测到的缺陷被分类，并且报告高度/深度，面积和体积的重要缺陷度量信息。 因此，根据本公开的系统和方法提供了更多的值来量化这些缺陷对晶片质量的负面影响。
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3.发明授权Methods and systems of object based metrology for advanced wafer surface nanotopography 有权用于先进晶圆表面纳米成像的基于物体的计量方法和系统公开(公告)号：US09031810B2
公开(公告)日：2015-05-12
申请号：US13170094
申请日：2011-06-27
申请人： Haiguang Chen , Jaydeep K. Sinha , Sergey Kamensky
发明人： Haiguang Chen , Jaydeep K. Sinha , Sergey Kamensky
CPC分类号： H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A system and method for enhanced and expanded localized geometry characterization. Objects of interest are enhanced, detected, and classified according to user-defined parameters, and this enables enhanced contrast and more accurate feature detection, as well as more accurately defined feature object regions for feature geometry measurement and characterization.
摘要翻译： 用于增强和扩展的局部几何特征的系统和方法。 感兴趣的对象根据用户定义的参数被增强，检测和分类，并且这使得增强的对比度和更精确的特征检测以及用于特征几何测量和表征的更精确定义的特征对象区域。
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4.发明申请METHODS AND SYSTEMS OF OBJECT BASED METROLOGY FOR ADVANCED WAFER SURFACE NANOTOPOGRAPHY 有权基于目标的方法和系统用于高级波形表面纳米尺度的方法和系统公开(公告)号：US20120179419A1
公开(公告)日：2012-07-12
申请号：US13170094
申请日：2011-06-27
申请人： Haiguang Chen , Jaydeep K. Sinha , Sergey Kamensky
发明人： Haiguang Chen , Jaydeep K. Sinha , Sergey Kamensky
IPC分类号： G06F15/00
CPC分类号： H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a system and method for enhanced and expanded localized geometry characterization. Objects of interest are classified according to user-defined parameters, and this enables enhanced contrast and more accurate feature detection, as well as more accurately defined feature object regions.
摘要翻译： 本文公开了用于增强和扩展的局部几何表征的系统和方法。 感兴趣的对象根据用户定义的参数分类，这使得能够增强对比度和更精确的特征检测以及更准确地定义的特征对象区域。
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5.发明申请METHODS AND SYSTEMS FOR IMPROVED LOCALIZED FEATURE QUANTIFICATION IN SURFACE METROLOGY TOOLS 有权用于改进表面计量工具中的本地化特征量化的方法和系统公开(公告)号：US20120177282A1
公开(公告)日：2012-07-12
申请号：US12986176
申请日：2011-01-07
申请人： Haiguang Chen , Jaydeep Sinha , Shouhong Tang , John Hager , Andrew Zeng , Sergey Kamensky
发明人： Haiguang Chen , Jaydeep Sinha , Shouhong Tang , John Hager , Andrew Zeng , Sergey Kamensky
IPC分类号： G06K9/00
CPC分类号： G06T5/002 , G06T5/20 , G06T7/0004 , G06T2207/30148
摘要： A method for enabling more accurate measurements of localized features on wafers is disclosed. The method includes: a) performing high order surface fitting to more effectively remove the low frequency shape components and also to reduce possible signal attenuations commonly observed from filtering; b) constructing and applying a proper two dimensional LFM window to the residual image from the surface fitting processing stage to effectively reduce the residual artifacts at the region boundaries; c) calculating the metrics of the region using the artifact-reduced image to obtain more accurate and reliable measurements; and d) using site-based metrics obtained from front and back surface data to quantify the features of interest. A method for filtering data from measurements of localized features on wafers is disclosed. This method includes an algorithm designed to adjust the filtering behavior according to the statistics of extreme data samples.A method for utilizing the 2D window and the data filtering to yield a more robust and more accurate Localized Feature quantification methodology is disclosed.
摘要翻译： 公开了一种能够更精确地测量晶片上局部特征的方法。 该方法包括：a）执行高阶表面拟合以更有效地去除低频形状分量，并且还可以减少通常从滤波观察到的可能的信号衰减; b）从表面拟合处理阶段构造和应用适当的二维LFM窗口到残余图像，以有效地减少区域边界处的残余伪像; c）使用伪影图像计算该区域的度量以获得更准确和可靠的测量; 以及d）使用从前面和背面数据获得的基于站点的度量来量化感兴趣的特征。 公开了一种用于从晶片上的局部特征的测量中滤出数据的方法。 该方法包括根据极端数据样本统计来调整过滤行为的算法。 公开了一种利用2D窗口和数据过滤产生更强大和更准确的局部特征量化方法的方法。
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6.发明授权Methods and systems for improved localized feature quantification in surface metrology tools 有权用于改进表面计量工具中局部特征量化的方法和系统公开(公告)号：US08630479B2
公开(公告)日：2014-01-14
申请号：US12986176
申请日：2011-01-07
申请人： Haiguang Chen , Jaydeep Sinha , Shouhong Tang , John Hager , Andrew Zeng , Sergey Kamensky
发明人： Haiguang Chen , Jaydeep Sinha , Shouhong Tang , John Hager , Andrew Zeng , Sergey Kamensky
IPC分类号： G06K9/00
CPC分类号： G06T5/002 , G06T5/20 , G06T7/0004 , G06T2207/30148
摘要： A method for enabling more accurate measurements of localized features on wafers is disclosed. The method includes: a) performing high order surface fitting to more effectively remove the low frequency shape components and also to reduce possible signal attenuations commonly observed from SEMI standard high pass, such as Gaussian and Double Gaussian filtering; b) constructing and applying a proper two dimensional LFM window to the residual image from the surface fitting processing stage to effectively reduce the residual artifacts at the region boundaries; c) calculating the metrics of the region using the artifact-reduced image to obtain more accurate and reliable measurements; and d) using site-based metrics obtained from front and back surface data to quantify the features of interest. Additional steps may also include: filtering data from measurements of localized features on wafers and adjusting the filtering behavior according to the statistics of extreme data samples.
摘要翻译： 公开了一种能够更精确地测量晶片上局部特征的方法。 该方法包括：a）执行高阶表面拟合，以更有效地去除低频形状分量，并减少通常从SEMI标准高通（如高斯和双高斯滤波）观察到的信号衰减; b）从表面拟合处理阶段构造和应用适当的二维LFM窗口到残余图像，以有效地减少区域边界处的残余伪像; c）使用伪影图像计算该区域的度量以获得更准确和可靠的测量; 以及d）使用从前面和背面数据获得的基于站点的度量来量化感兴趣的特征。 附加步骤还可以包括：根据晶片上局部特征的测量过滤数据，并根据极端数据样本的统计调整滤波行为。
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