公开(公告)号：US5063581A

公开(公告)日：1991-11-05

申请号：US557699

申请日：1990-07-25

申请人： Hajime Akimoto ,  Toshifumi Ozaki ,  Kazuya Tokumasu ,  Hideyuki Ono ,  Haruhiko Tanaka

发明人： Hajime Akimoto ,  Toshifumi Ozaki ,  Kazuya Tokumasu ,  Hideyuki Ono ,  Haruhiko Tanaka

IPC分类号： H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H04N5/335 ,  H04N5/361 ,  H04N5/369 ,  H04N5/3728

CPC分类号： H01L27/14831

摘要： The semiconductor device having both vertically arranged CCDs and a horizontal CCD, such as, in connection with a solid state image pickup device, is provided with a horizontal CCD in which the transfer speed and the transfer efficiency of a horizontal CCD thereof is improved substantially. In such a device, a plurality of photodiodes are provided on a semiconductor substrate, vertical CCDs are provided on the semiconductor substrate for transferring signal charges of the photodiodes and a horizontal CCD is provided on the semiconductor substrate for transferring signal charges received from the vertical CCDs. The vertical and horizontal CCDs of such a semiconductor device are formed in a well structure provided on the substrate such that the depletion region extending from the channel of the horizontal CCD and a depletion region produced between the underlying substrate and the well are configured to meet each other under each of the transfer electrodes of the horizontal CCD. The depletion region extending from a channel of the vertical CCDs and the depletion region produced between the underlying substrate and the well, however, do not meet each other under each of the transfer electrodes thereof.

摘要翻译： 具有垂直配置的CCD和水平CCD的半导体器件（例如与固态图像拾取器件相关联）设置有水平CCD，其中水平CCD的传输速度和传输效率基本上得到改善。 在这种器件中，在半导体衬底上设置多个光电二极管，在半导体衬底上设置垂直CCD以转移光电二极管的信号电荷，并且在半导体衬底上设置水平CCD以传送从垂直CCDs接收的信号电荷 。 这样的半导体器件的垂直和水平CCD形成在设置在衬底上的阱结构中，使得从水平CCD的沟道延伸的耗尽区域和在下面的衬底和阱之间产生的耗尽区被配置为满足每个 在水平CCD的每个转移电极下方。 然而，从垂直CCD的通道延伸的耗尽区域和在下面的衬底和阱之间产生的耗尽区域在其每个转移电极之间不相互满足。