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1.发明授权Boundary acoustic wave device comprising Ni diffused in Au and method for manufacturing the same 有权包含在Au中扩散的Ni的边界声波器件及其制造方法公开(公告)号：US07554428B2
公开(公告)日：2009-06-30
申请号：US12190620
申请日：2008-08-13
CPC分类号： H03H9/0222 , H03H9/14541 , Y10T29/42
摘要： A boundary acoustic wave device includes a first medium, a second medium, and an IDT electrode disposed at an interface between the first medium and the second medium, the IDT electrode having an Au layer defining a main electrode layer, wherein a Ni layer is laminated so as to contact at least one surface of the Au layer, and a portion of Ni defining the Ni layer is diffused from the Ni layer side surface of the Au layer toward the inside of the Au layer.
摘要翻译： 弹性边界波装置包括第一介质，第二介质和布置在第一介质和第二介质之间的界面处的IDT电极，所述IDT电极具有限定主电极层的Au层，其中Ni层被层压 以接触Au层的至少一个表面，并且限定Ni层的Ni的一部分从Au层的Ni层侧表面朝向Au层的内部扩散。
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公开(公告)号：US08099853B2
公开(公告)日：2012-01-24
申请号：US12504843
申请日：2009-07-17
IPC分类号： H04R31/00
CPC分类号： H03H9/0222 , H03H3/08 , Y10T29/42 , Y10T29/49005 , Y10T29/49007 , Y10T29/4908
摘要： A method for manufacturing a boundary acoustic wave device prevents formation of discontinuous portions in a dielectric film without a significant decrease in the thickness of an IDT when the dielectric film is formed by deposition and without deterioration of electrical characteristics. The method includes the steps of forming an IDT on a piezoelectric substrate, forming a lower dielectric film so as to cover the IDT, conducting a planarizing step so as to smooth the rough surface of the lower dielectric film, and forming an upper dielectric film so as to cover the lower dielectric film of which the rough surface is smoothed.
摘要翻译： 声界面波装置的制造方法通过沉积形成电介质膜并且不会劣化电气特性，可防止在电介质膜中形成不连续部分而不会使IDT的厚度显着降低。 该方法包括以下步骤：在压电基片上形成IDT，形成下电介质膜以覆盖IDT，进行平面化步骤，使下电介质膜的粗糙表面平滑，并形成上电介质膜 以覆盖粗糙表面平滑的下电介质膜。
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公开(公告)号：US07902717B2
公开(公告)日：2011-03-08
申请号：US12412446
申请日：2009-03-27
申请人： Shin Saijou , Toshiyuki Fuyutsume
发明人： Shin Saijou , Toshiyuki Fuyutsume
IPC分类号： H01L41/083
CPC分类号： H03H9/0222 , H03H9/131 , H03H9/14541 , Y10T29/42
摘要： A boundary acoustic wave device includes a piezoelectric substance, a dielectric substance laminated on the piezoelectric substance, and an electrode film disposed at a boundary between the piezoelectric substance and a dielectric substance, the device utilizing a boundary acoustic wave propagating along the boundary, wherein the electrode film is any one Au alloy electrode film of an Au alloy electrode film including Cu at a ratio of about 0.01% to about 4.8% by weight, an Au alloy electrode film including Pd at a ratio of about 0.01% to about 6.8% by weight, and an Au alloy electrode film including Ni at a ratio of about 0.01% to about 3.5% by weight.
摘要翻译： 弹性边界波装置包括：压电体，层叠在压电体上的电介质，以及配置在压电体和电介质之间的边界的电极膜，利用沿边界传播的边界声波， 电极膜是包含比例为约0.01〜4.8重量％的Cu的Au合金电极膜的任何一个Au合金电极膜，包含比例为约0.01〜6.8％的Pd的Au合金电极膜， 以及包含Ni的Au合金电极膜，其比例为约0.01重量％至约3.5重量％。
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公开(公告)号：US06552475B2
公开(公告)日：2003-04-22
申请号：US09892231
申请日：2001-06-27
IPC分类号： H01L4108
CPC分类号： H03H3/08 , H01L2224/05001 , H01L2224/05023 , H01L2224/05027 , H01L2224/0508 , H01L2224/05568 , H01L2224/05573 , H01L2224/11 , H01L2224/05624 , H01L2924/00014 , H01L2224/05639 , H01L2224/05644 , H01L2224/05124 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171
摘要： A surface acoustic wave device includes a surface acoustic wave substrate having two IDT electrodes including wiring electrode portions made of aluminum disposed thereon. First, second and third metal films are laminated on each of the wiring electrode portions. The first metal film has superior bondability to aluminum, and the third metal film has superior bondability to bumps. In addition, the second metal film has an ability to suppress the diffusion of the metal defining the first metal film.
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公开(公告)号：US06414415B1
公开(公告)日：2002-07-02
申请号：US09483142
申请日：2000-01-13
IPC分类号： H01L4108
CPC分类号： H03H9/02897 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/04042 , H01L2224/05556 , H01L2224/05599 , H01L2224/05624 , H01L2224/32225 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2224/85424 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01027 , H01L2924/014 , H01L2924/12041 , H01L2924/15153 , H01L2924/15165 , H01L2924/16195 , H03H3/08 , H03H9/0585 , H03H9/1071 , H01L2224/45099 , H01L2924/00
摘要： A surface acoustic wave device includes a package having an element mounting surface, a surface acoustic wave element provided in the package and having at least one bonding electrode, an adhesive arranged such that the surface acoustic wave element is fixed to the element mounting surface of the package, and at least one bonding wire connected to the at least one bonding electrode. The at least one bonding electrode has at least one line-shaped through hole extending therethrough at a region where the at least one bonding wire is connected to the at least one bonding electrode.
摘要翻译： 声表面波装置包括具有元件安装面的封装体，设置在封装体内的弹性表面波元件，具有至少一个接合电极，粘合剂布置成使声表面波元件固定在元件安装面的元件安装面上 封装，以及连接到所述至少一个接合电极的至少一个接合线。 所述至少一个接合电极在所述至少一个接合线连接到所述至少一个接合电极的区域处具有延伸穿过其中的至少一个线状通孔。
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公开(公告)号：US08997320B2
公开(公告)日：2015-04-07
申请号：US12864060
申请日：2008-11-26
申请人： Toshiyuki Fuyutsume , Taro Nishino , Hisashi Yamazaki , Noboru Tamura , Nakaba Ichikawa , Masaki Aruga
发明人： Toshiyuki Fuyutsume , Taro Nishino , Hisashi Yamazaki , Noboru Tamura , Nakaba Ichikawa , Masaki Aruga
CPC分类号： H03H3/02 , C23C4/04 , C23C4/06 , C23C4/10 , H03H3/007 , H03H3/04 , H03H3/10 , H03H9/02559 , Y10T29/42 , Y10T29/49147 , Y10T29/49155
摘要： Provided is a method for manufacturing an acoustic wave device that has an excellent temperature coefficient of frequency (TCF) and high accuracy of IDT pattern forming and is capable of resisting high temperature processing of 200 degrees or more. The method for manufacturing an acoustic wave device according to the present invention includes forming an IDT (2) on a principal surface (1a) of a piezoelectric substrate (1), and forming a film by thermal spraying a material (3) having a smaller linear thermal expansion coefficient than the piezoelectric substrate onto an opposite principal surface (1b) of the piezoelectric substrate (1) where the IDT (2) is formed.
摘要翻译： 提供一种具有优异的频率温度系数（TCF）和高精度的IDT图案形成的声波器件的制造方法，能够抵抗200度以上的高温处理。 根据本发明的声波装置的制造方法包括在压电基板（1）的主表面（1a）上形成IDT（2），并通过热喷涂形成薄膜的材料（3） 线性热膨胀系数比形成有IDT（2）的压电基板（1）的相对的主表面（1b）上的压电基板。
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公开(公告)号：US20100301700A1
公开(公告)日：2010-12-02
申请号：US12864073
申请日：2008-11-26
申请人： Toshiyuki Fuyutsume , Taro Nishino , Hisashi Yamazaki , Kiyoto Araki , Noboru Tamura , Nakaba Ichikawa , Masaki Aruga
发明人： Toshiyuki Fuyutsume , Taro Nishino , Hisashi Yamazaki , Kiyoto Araki , Noboru Tamura , Nakaba Ichikawa , Masaki Aruga
摘要： Provided are an acoustic wave device and a method for manufacturing the same, the acoustic wave device being effectively prevented from expanding and contracting due to temperature change and having a small frequency shift. The acoustic wave device of the present invention has a piezoelectric substrate (1) having an IDT (2) formed on one principal surface of the piezoelectric substrate (1), and a thermal spray film (3) formed on an opposite principal surface (1b) of the piezoelectric substrate (1), the thermal spray film being of a material having a smaller linear thermal expansion coefficient than the piezoelectric substrate (1) and having grain boundaries and pores (4), at least a part of which is filled with a filling material (5).
摘要翻译： 提供一种声波装置及其制造方法，能够有效地防止声波装置由于温度变化而发生膨胀和收缩，并具有小的频移。 本发明的声波元件具有在压电基板（1）的一个主面上形成有IDT（2）的压电基板（1）和形成在相对的主面（1b）上的热喷涂膜 ），所述热喷涂膜是具有比所述压电基板（1）更小的线性热膨胀系数并且具有晶界和孔（4）的材料，所述材料的至少一部分填充有 填充材料（5）。
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公开(公告)号：US06760960B2
公开(公告)日：2004-07-13
申请号：US10246624
申请日：2002-09-19
IPC分类号： H04R1700
CPC分类号： H03H3/08 , G03F7/091 , Y10T29/42 , Y10T29/49401
摘要： A method of forming an electrode pattern of a surface acoustic wave device easily and reliably prevents the occurrence of an abnormality in the shape of a resist pattern. In the electrode pattern forming method, a resist layer is formed on a top surface of a piezoelectric substrate, and then exposed to ultraviolet rays through a photomask provided above the top surface of the piezoelectric substrate to form a resist pattern on the surface of the piezoelectric substrate. Furthermore, a conductor film is formed on the top surface of the piezoelectric substrate, and the resist pattern is removed by a liftoff method to form an electrode pattern of the surface acoustic wave device. Exposure is performed using ultraviolet rays having a wavelength which is completely absorbed into the piezoelectric substrate without reaching the bottom surface of the piezoelectric substrate.
摘要翻译： 形成表面声波装置的电极图案的方法容易且可靠地防止抗蚀剂图案的形状发生异常。 在电极图案形成方法中，在压电基板的上表面上形成抗蚀剂层，然后通过设置在压电基板的顶表面上方的光掩模进行紫外线曝光，以在压电基板的表面上形成抗蚀剂图案 基质。 此外，在压电基板的顶面上形成导体膜，通过剥离法除去抗蚀剂图案，形成表面声波装置的电极图案。 使用具有完全吸收到压电基板中的波长的紫外线进行曝光，而不到达压电基板的底面。
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公开(公告)号：US08319394B2
公开(公告)日：2012-11-27
申请号：US12864073
申请日：2008-11-26
申请人： Toshiyuki Fuyutsume , Taro Nishino , Hisashi Yamazaki , Kiyoto Araki , Noboru Tamura , Nakaba Ichikawa , Masaki Aruga
发明人： Toshiyuki Fuyutsume , Taro Nishino , Hisashi Yamazaki , Kiyoto Araki , Noboru Tamura , Nakaba Ichikawa , Masaki Aruga
IPC分类号： H03H9/25
摘要： Provided are an acoustic wave device and a method for manufacturing the same, the acoustic wave device being effectively prevented from expanding and contracting due to temperature change and having a small frequency shift. The acoustic wave device of the present invention has a piezoelectric substrate (1) having an IDT (2) formed on one principal surface of the piezoelectric substrate (1), and a thermal spray film (3) formed on an opposite principal surface (1b) of the piezoelectric substrate (1), the thermal spray film being of a material having a smaller linear thermal expansion coefficient than the piezoelectric substrate (1) and having grain boundaries and pores (4), at least a part of which is filled with a filling material (5).
摘要翻译： 提供一种声波装置及其制造方法，能够有效地防止声波装置由于温度变化而发生膨胀和收缩，并具有小的频移。 本发明的声波元件具有在压电基板（1）的一个主面上形成有IDT（2）的压电基板（1）和形成在相对的主面（1b）上的热喷涂膜 ），所述热喷涂膜是具有比所述压电基板（1）更小的线性热膨胀系数并且具有晶界和孔（4）的材料，所述材料的至少一部分填充有 填充材料（5）。
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公开(公告)号：US20100293770A1
公开(公告)日：2010-11-25
申请号：US12864060
申请日：2008-11-26
申请人： Toshiyuki Fuyutsume , Taro Nishino , Hisashi Yamazaki , Noboru Tamura , Nakaba Ichikawa , Masaki Aruga
发明人： Toshiyuki Fuyutsume , Taro Nishino , Hisashi Yamazaki , Noboru Tamura , Nakaba Ichikawa , Masaki Aruga
IPC分类号： H04R17/00
CPC分类号： H03H3/02 , C23C4/04 , C23C4/06 , C23C4/10 , H03H3/007 , H03H3/04 , H03H3/10 , H03H9/02559 , Y10T29/42 , Y10T29/49147 , Y10T29/49155
摘要： Provided is a method for manufacturing an acoustic wave device that has an excellent temperature coefficient of frequency (TCF) and high accuracy of IDT pattern forming and is capable of resisting high temperature processing of 200 degrees or more. The method for manufacturing an acoustic wave device according to the present invention includes forming an IDT (2) on a principal surface (1a) of a piezoelectric substrate (1), and forming a film by thermal spraying a material (3) having a smaller linear thermal expansion coefficient than the piezoelectric substrate onto an opposite principal surface (1b) of the piezoelectric substrate (1) where the IDT (2) is formed.
摘要翻译： 提供一种具有优异的频率温度系数（TCF）和高精度的IDT图案形成的声波器件的制造方法，能够抵抗200度以上的高温处理。 根据本发明的声波装置的制造方法包括在压电基板（1）的主表面（1a）上形成IDT（2），并通过热喷涂形成薄膜的材料（3） 线性热膨胀系数比形成有IDT（2）的压电基板（1）的相对的主表面（1b）上的压电基板。
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