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公开(公告)号：US08270451B2
公开(公告)日：2012-09-18
申请号：US12956558
申请日：2010-11-30
IPC分类号： H01S3/08
CPC分类号： H01S5/1082 , H01S5/0655 , H01S5/162 , H01S5/166 , H01S5/2036 , H01S5/2072 , H01S5/2086 , H01S5/22 , H01S5/227 , H01S2301/18
摘要： An edge emitting semiconductor laser includes a semiconductor body, which has a waveguide region. The waveguide region has an active layer for generating laser radiation. The active layer is arranged between a first waveguide layer and a second waveguide layer. The waveguide region is arranged between a first cladding layer and a second cladding layer. The semiconductor body has a main region and at least one phase structure region in which is formed a phase structure for the selection of lateral modes of the laser radiation emitted by the active layer. The phase structure region is arranged outside the waveguide region or formed by a region in which a dopant is introduced or an intermixing structure is produced.
摘要翻译： 边缘发射半导体激光器包括具有波导区域的半导体本体。 波导区域具有用于产生激光辐射的有源层。 有源层布置在第一波导层和第二波导层之间。 波导区域布置在第一包层和第二包层之间。 半导体本体具有主区域和至少一个相结构区域，其中形成有用于选择由有源层发射的激光辐射的横向模式的相位结构。 相结构区域布置在波导区域的外侧，或者由引入掺杂剂的区域或者混合结构体形成。
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公开(公告)号：US20110122907A1
公开(公告)日：2011-05-26
申请号：US12956558
申请日：2010-11-30
IPC分类号： H01S5/02
CPC分类号： H01S5/1082 , H01S5/0655 , H01S5/162 , H01S5/166 , H01S5/2036 , H01S5/2072 , H01S5/2086 , H01S5/22 , H01S5/227 , H01S2301/18
摘要： An edge emitting semiconductor laser includes a semiconductor body, which has a waveguide region. The waveguide region has an active layer for generating laser radiation. The active layer is arranged between a first waveguide layer and a second waveguide layer. The waveguide region is arranged between a first cladding layer and a second cladding layer. The semiconductor body has a main region and at least one phase structure region in which is formed a phase structure for the selection of lateral modes of the laser radiation emitted by the active layer. The phase structure region is arranged outside the waveguide region or formed by a region in which a dopant is introduced or an intermixing structure is produced.
摘要翻译： 边缘发射半导体激光器包括具有波导区域的半导体本体。 波导区域具有用于产生激光辐射的有源层。 有源层布置在第一波导层和第二波导层之间。 波导区域布置在第一包层和第二包层之间。 半导体本体具有主区域和至少一个相结构区域，其中形成有用于选择由有源层发射的激光辐射的横向模式的相位结构。 相结构区域布置在波导区域的外侧，或者由引入掺杂剂的区域或者混合结构体形成。
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公开(公告)号：US20110317732A1
公开(公告)日：2011-12-29
申请号：US13130444
申请日：2009-11-19
IPC分类号： H01S5/10
CPC分类号： H01S5/10 , H01S5/028 , H01S5/0655 , H01S5/1064 , H01S5/1203 , H01S5/1237 , H01S5/16 , H01S5/2036 , H01S2301/176
摘要： An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also includes at least one structured laser radiation scattering area in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.
摘要翻译： 边缘发射半导体激光器包括具有波导区域的半导体本体。 波导区域包括下覆盖层，下波导层，用于产生激光辐射的有源层，上波导层和上覆盖层。 波导区域还包括至少一个结构化的激光辐射散射区域，其中横向基底激光辐射模式经受比较高激光模式的辐射更少的散射损耗。
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公开(公告)号：US08363688B2
公开(公告)日：2013-01-29
申请号：US13130444
申请日：2009-11-19
IPC分类号： H01S5/00
CPC分类号： H01S5/10 , H01S5/028 , H01S5/0655 , H01S5/1064 , H01S5/1203 , H01S5/1237 , H01S5/16 , H01S5/2036 , H01S2301/176
摘要： An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also includes at least one structured laser radiation scattering area in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.
摘要翻译： 边缘发射半导体激光器包括具有波导区域的半导体本体。 波导区域包括下覆盖层，下波导层，用于产生激光辐射的有源层，上波导层和上覆盖层。 波导区域还包括至少一个结构化的激光辐射散射区域，其中横向基底激光辐射模式经受比较高激光模式的辐射更少的散射损耗。
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