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    NON-VOLATILE STORAGE WITH CURRENT SENSING OF NEGATIVE THRESHOLD VOLTAGES
    4.
    发明申请
    NON-VOLATILE STORAGE WITH CURRENT SENSING OF NEGATIVE THRESHOLD VOLTAGES 有权
    具有负电压电压的电流感测的非易失性存储

    公开(公告)号：US20080247228A1

    公开(公告)日：2008-10-09

    申请号：US11771987

    申请日：2007-06-29

    申请人： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu ,  Nima Mokhlesi ,  Deepak Chandra Sekar

    发明人： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu ,  Nima Mokhlesi ,  Deepak Chandra Sekar

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C2211/5621 ,  G11C2211/5623 ,  G11C2211/5634 ,  G11C2211/565

    摘要： A non-volatile storage device in which current sensing is performed for a non-volatile storage element with a negative threshold voltage. A control gate read voltage is applied to a selected word line of a non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages exceed the control gate read voltage so that a positive control gate read voltage can be used. There is no need for a negative charge pump to apply a negative word line voltage even for sensing a negative threshold voltage. A programming condition of the non-volatile storage element is determined by sensing a voltage drop which is tied to a fixed current which flows in a NAND string of the non-volatile storage element.

    摘要翻译： 一种非易失性存储装置，其中对具有负阈值电压的非易失性存储元件执行电流检测。 控制栅极读取电压被施加到非易失性存储元件的选定字线，并且源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。 源极和p阱电压超过控制栅极读取电压，从而可以使用正极控制栅极读取电压。 即使用于感测负阈值电压，也不需要负电荷泵来施加负字线电压。 通过感测与在非易失性存储元件的NAND串中流动的固定电流相关联的电压降来确定非易失性存储元件的编程条件。

    NON-VOLATILE STORAGE USING CURRENT SENSING WITH BIASING OF SOURCE AND P-Well
    5.
    发明申请
    NON-VOLATILE STORAGE USING CURRENT SENSING WITH BIASING OF SOURCE AND P-Well 有权
    使用电流传感与源极和P阱的非挥发性储存

    公开(公告)号：US20080247229A1

    公开(公告)日：2008-10-09

    申请号：US11771997

    申请日：2007-06-29

    申请人： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

    发明人： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C2211/5621 ,  G11C2211/5623 ,  G11C2211/5634 ,  G11C2211/565

    摘要： A non-volatile storage device in which current sensing is performed for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.

    摘要翻译： 一种非易失性存储装置，其中对非易失性存储元件执行电流检测。 对第一非易失性存储元件的选定字线施加电压，并且将源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。 源极和p阱电压在相应的正直流电平下被调节，以避免地电压或电压波动，如果源电压至少在接地电压下被调节，则会发生接地反弹或电压波动。 通过感测非易失性存储元件的NAND串中的电流来确定非易失性存储元件的编程条件。 感觉可以快速发生，因为等待地面反弹稳定没有延迟。

    Method for current sensing with biasing of source and P-well in non-volatile storage
    6.
    发明授权
    Method for current sensing with biasing of source and P-well in non-volatile storage 有权
    用于在非易失性存储器中源和P阱偏置的电流感测方法

    公开(公告)号：US07489554B2

    公开(公告)日：2009-02-10

    申请号：US11771992

    申请日：2007-06-29

    申请人： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

    发明人： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

    IPC分类号： G11C16/04 ,  G11C16/06

    CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C2211/5621 ,  G11C2211/5623 ,  G11C2211/5634 ,  G11C2211/565

    摘要： Current sensing is performed in a non-volatile storage device for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.

    摘要翻译： 在用于非易失性存储元件的非易失性存储设备中执行电流检测。 对第一非易失性存储元件的选定字线施加电压，并且将源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。 源极和p阱电压在相应的正直流电平下被调节，以避免地电压或电压波动，如果源电压至少在接地电压下被调节，则会发生接地反弹或电压波动。 通过感测非易失性存储元件的NAND串中的电流来确定非易失性存储元件的编程条件。 感觉可以快速发生，因为等待地面反弹稳定没有延迟。

    Non-volatile storage using current sensing with biasing of source and P-Well
    7.
    发明授权
    Non-volatile storage using current sensing with biasing of source and P-Well 有权
    使用源偏置和P-Well的电流感测的非易失性存储

    公开(公告)号：US07539060B2

    公开(公告)日：2009-05-26

    申请号：US11771997

    申请日：2007-06-29

    申请人： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

    发明人： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

    IPC分类号： G11C16/04 ,  G11C16/06

    CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C2211/5621 ,  G11C2211/5623 ,  G11C2211/5634 ,  G11C2211/565

    摘要： A non-volatile storage device in which current sensing is performed for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.

    摘要翻译： 一种非易失性存储装置，其中对非易失性存储元件执行电流检测。 对第一非易失性存储元件的选定字线施加电压，并且将源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。 源极和p阱电压在相应的正直流电平下被调节，以避免地电压或电压波动，如果源电压至少在接地电压下被调节，则会发生接地反弹或电压波动。 通过感测非易失性存储元件的NAND串中的电流来确定非易失性存储元件的编程条件。 感觉可以快速发生，因为等待地面反弹稳定没有延迟。

    METHOD FOR CURRENT SENSING WITH BIASING OF SOURCE AND P-WELL IN NON-VOLATILE STORAGE
    8.
    发明申请
    METHOD FOR CURRENT SENSING WITH BIASING OF SOURCE AND P-WELL IN NON-VOLATILE STORAGE 有权
    用于在非易失性存储器中源和偏心的电流感测的方法

    公开(公告)号：US20080247239A1

    公开(公告)日：2008-10-09

    申请号：US11771992

    申请日：2007-06-29

    申请人： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

    发明人： Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui ,  Shahzad Khalid ,  Hock So ,  Prashanti Govindu

    IPC分类号： G11C11/34

    CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C2211/5621 ,  G11C2211/5623 ,  G11C2211/5634 ,  G11C2211/565

    摘要： Current sensing is performed in a non-volatile storage device for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.

    摘要翻译： 在用于非易失性存储元件的非易失性存储设备中执行电流检测。 对第一非易失性存储元件的选定字线施加电压，并且将源极和p阱电压分别施加到与非易失性存储元件相关联的源极和p阱。 源极和p阱电压在相应的正直流电平下被调节，以避免地电压或电压波动，如果源电压至少在接地电压下被调节，则会发生接地反弹或电压波动。 通过感测非易失性存储元件的NAND串中的电流来确定非易失性存储元件的编程条件。 感觉可以快速发生，因为等待地面反弹稳定没有延迟。

    Non-volatile storage with compensation for source voltage drop
    9.
    发明授权
    Non-volatile storage with compensation for source voltage drop 有权
    非易失性存储器，用于补偿源电压降

    公开(公告)号：US07606072B2

    公开(公告)日：2009-10-20

    申请号：US11739509

    申请日：2007-04-24

    申请人： Deepak Chandra Sekar ,  Nima Mokhlesi ,  Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui

    发明人： Deepak Chandra Sekar ,  Nima Mokhlesi ,  Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui

    IPC分类号： G11C16/06

    CPC分类号： G11C8/08 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3436

    摘要： A source line bias error caused by a voltage drop in a source line of a non-volatile memory device during a read or verify operation is addressed. In one approach, a body bias is applied to a substrate of the non-volatile memory device by coupling the substrate to a source voltage or a voltage which is a function of the source voltage. In another approach, a control gate voltage and/or drain voltage, e.g., bit line voltage, are compensated by referencing them to a voltage which is based on the source voltage instead of to ground. Various combinations of these approaches can be used as well. During other operations, such as programming, erase-verify and sensing of negative threshold voltages, the source line bias error is not present, so there is no need for a bias or compensation. A forward body bias can also be compensated.

    摘要翻译： 解决了在读取或验证操作期间由非易失性存储器件的源极线中的电压降引起的源极线偏置误差。 在一种方法中，通过将衬底耦合到源电压或作为源电压的函数的电压，将体偏置施加到非易失性存储器件的衬底。 在另一种方法中，控制栅极电压和/或漏极电压（例如位线电压）通过将其参考到基于源电压而不是接地的电压来补偿。 也可以使用这些方法的各种组合。 在其他操作中，例如编程，擦除验证和感测负阈值电压，源极偏置误差不存在，因此不需要偏置或补偿。 还可以补偿向前的身体偏差。

    Compensating source voltage drop in non-volatile storage
    10.
    发明授权
    Compensating source voltage drop in non-volatile storage 有权
    在非易失性存储器中补偿电源电压降

    公开(公告)号：US07606071B2

    公开(公告)日：2009-10-20

    申请号：US11739501

    申请日：2007-04-24

    申请人： Deepak Chandra Sekar ,  Nima Mokhlesi ,  Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui

    发明人： Deepak Chandra Sekar ,  Nima Mokhlesi ,  Hao Thai Nguyen ,  Seungpil Lee ,  Man Lung Mui

    IPC分类号： G11C16/06

    CPC分类号： G11C8/08 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3436

    摘要： A source line bias error caused by a voltage drop in a source line of a non-volatile memory device during a read or verify operation is addressed. In one approach, a body bias is applied to a substrate of the non-volatile memory device by coupling the substrate to a source voltage or a voltage which is a function of the source voltage. In another approach, a control gate voltage and/or drain voltage, e.g., bit line voltage, are compensated by referencing them to a voltage which is based on the source voltage instead of to ground. Various combinations of these approaches can be used as well. During other operations, such as programming, erase-verify and sensing of negative threshold voltages, the source line bias error is not present, so there is no need for a bias or compensation. A forward body bias can also be compensated.

    摘要翻译： 解决了在读取或验证操作期间由非易失性存储器件的源极线中的电压降引起的源极线偏置误差。 在一种方法中，通过将衬底耦合到源电压或作为源电压的函数的电压，将体偏置施加到非易失性存储器件的衬底。 在另一种方法中，控制栅极电压和/或漏极电压（例如位线电压）通过将其参考到基于源电压而不是接地的电压来补偿。 也可以使用这些方法的各种组合。 在其他操作中，例如编程，擦除验证和感测负阈值电压，源极偏置误差不存在，因此不需要偏置或补偿。 还可以补偿向前的身体偏差。