Method and system for determining object height
    1.
    发明授权
    Method and system for determining object height 失效
    用于确定物体高度的方法和系统

    公开(公告)号:US07567885B2

    公开(公告)日:2009-07-28

    申请号:US11843978

    申请日:2007-08-23

    IPC分类号: G06F19/00

    CPC分类号: G01B5/061 G01B7/082

    摘要: An apparatus and method for measuring a height of an object above a surface includes a housing with a first portion having an upper surface and a lower surface and an extension portion extending a first distance from the lower surface of the first portion. The extension portion defines a cavity opposing the lower surface of the first portion. The apparatus further includes one or more actuators passing through the lower surface of the first portion of the housing and extending into the cavity. Additionally, the apparatus includes a plate supported by one or more flexible members coupled to the extension portion. The plate has a top surface and a bottom surface that lies in a plane substantially parallel to the surface. Moreover, the apparatus includes a plurality of sensors disposed at predetermined positions of the plate. Each of the plurality of sensors is responsive to a height measured between each of the plurality of sensors and the surface.

    摘要翻译: 用于测量表面上方的物体的高度的装置和方法包括具有第一部分的壳体,该第一部分具有上表面和下表面,以及从第一部分的下表面延伸第一距离的延伸部分。 延伸部分限定了与第一部分的下表面相对的空腔。 该装置还包括通过壳体的第一部分的下表面并延伸到空腔中的一个或多个致动器。 另外,该装置包括由耦合到延伸部分的一个或多个柔性构件支撑的板。 板具有位于基本上平行于表面的平面中的顶表面和底表面。 此外,该装置包括设置在板的预定位置的多个传感器。 多个传感器中的每一个响应于在多个传感器中的每一个和表面之间测量的高度。

    METHOD AND SYSTEM FOR BAKE PLATE HEAT TRANSFER CONTROL IN TRACK LITHOGRAPHY TOOLS
    2.
    发明申请
    METHOD AND SYSTEM FOR BAKE PLATE HEAT TRANSFER CONTROL IN TRACK LITHOGRAPHY TOOLS 审中-公开
    方法和系统用于轨道光刻工具中的烤盘传热控制

    公开(公告)号:US20080160462A1

    公开(公告)日:2008-07-03

    申请号:US11693646

    申请日:2007-03-29

    IPC分类号: G03C5/00 H05B3/68

    摘要: A thermal processing module for a track lithography tool includes a bake plate comprising a process surface and a lower surface opposing the process surface. The thermal processing module also includes a plurality of electrodes coupled to the bake plate Each of the plurality of electrodes is adapted to receive a drive signal. The thermal processing module further includes a plurality of proximity pins coupled to the process surface and extending to a predetermined height from the process surface, a plurality of flexible members coupled to the lower surface of the bake plate, a chill plate coupled to the plurality of flexible members and defining a plurality of chambers, and a plurality of channels. Each of the plurality of channels is in fluid communication with one of the plurality of chambers and with one or more sources of a pressurized fluid.

    摘要翻译: 用于轨道光刻工具的热处理模块包括烘烤板,烘烤板包括工艺表面和与工艺表面相对的下表面。 热处理模块还包括耦合到烘烤板的多个电极。多个电极中的每一个适于接收驱动信号。 热处理模块还包括耦合到处理表面并且从处理表面延伸到预定高度的多个邻近销,耦合到烘烤板的下表面的多个柔性构件,与多个 柔性构件和限定多个腔室以及多个通道。 多个通道中的每一个与多个室中的一个与加压流体的一个或多个源流体连通。

    Method and System for Determining Object Height
    3.
    发明申请
    Method and System for Determining Object Height 失效
    确定对象高度的方法和系统

    公开(公告)号:US20090055124A1

    公开(公告)日:2009-02-26

    申请号:US11843978

    申请日:2007-08-23

    IPC分类号: G01B21/18 G01B5/004

    CPC分类号: G01B5/061 G01B7/082

    摘要: An apparatus and method for measuring a height of an object above a surface includes a housing with a first portion having an upper surface and a lower surface and an extension portion extending a first distance from the lower surface of the first portion. The extension portion defines a cavity opposing the lower surface of the first portion. The apparatus further includes one or more actuators passing through the lower surface of the first portion of the housing and extending into the cavity. Additionally, the apparatus includes a plate supported by one or more flexible members coupled to the extension portion. The plate has a top surface and a bottom surface that lies in a plane substantially parallel to the surface. Moreover, the apparatus includes a plurality of sensors disposed at predetermined positions of the plate. Each of the plurality of sensors is responsive to a height measured between each of the plurality of sensors and the surface.

    摘要翻译: 用于测量表面上方的物体的高度的装置和方法包括具有第一部分的壳体,该第一部分具有上表面和下表面,以及从第一部分的下表面延伸第一距离的延伸部分。 延伸部分限定了与第一部分的下表面相对的空腔。 该装置还包括通过壳体的第一部分的下表面并延伸到空腔中的一个或多个致动器。 另外,该装置包括由耦合到延伸部分的一个或多个柔性构件支撑的板。 板具有位于基本上平行于表面的平面中的顶表面和底表面。 此外,该装置包括设置在板的预定位置的多个传感器。 多个传感器中的每一个响应于在多个传感器中的每一个和表面之间测量的高度。

    APPARATUS FOR SUPPORTING A SUBSTRATE DURING SEMICONDUCTOR PROCESSING OPERATIONS
    4.
    发明申请
    APPARATUS FOR SUPPORTING A SUBSTRATE DURING SEMICONDUCTOR PROCESSING OPERATIONS 审中-公开
    用于在半导体加工操作期间支撑基板的装置

    公开(公告)号:US20090179366A1

    公开(公告)日:2009-07-16

    申请号:US12015060

    申请日:2008-01-16

    IPC分类号: B25B11/00

    摘要: An apparatus for supporting a substrate during semiconductor processing includes a substrate support structure having a first surface, a second surface opposing the first surface, and a groove recessed into the first surface and defining a peripheral portion of the substrate support structure. The substrate support structure is substantially free of guide pins. The apparatus also includes an annular sealing member coupled to the groove and a plurality of proximity pins projecting to a first height above the first surface. The apparatus further includes a plurality of purge ports passing from the second surface to the first surface, a plurality of vacuum ports passing from the second surface to the first surface, and a heating mechanism coupled to the substrate support structure.

    摘要翻译: 一种用于在半导体处理期间支撑衬底的装置包括具有第一表面,与第一表面相对的第二表面的衬底支撑结构以及凹入第一表面并限定衬底支撑结构的周边部分的凹槽。 衬底支撑结构基本上没有引导销。 该装置还包括联接到凹槽的环形密封构件和突出到第一表面上方的第一高度的多个接近销。 所述设备还包括从所述第二表面到所述第一表面通过的多个清洗端口,从所述第二表面到所述第一表面通过的多个真空端口,以及联接到所述基板支撑结构的加热机构。

    METHOD AND SYSTEM TO MEASURE AND COMPENSATE FOR SUBSTRATE WARPAGE DURING THERMAL PROCESSING
    5.
    发明申请
    METHOD AND SYSTEM TO MEASURE AND COMPENSATE FOR SUBSTRATE WARPAGE DURING THERMAL PROCESSING 审中-公开
    在热处理过程中测量和补偿衬底温度的方法和系统

    公开(公告)号:US20080153182A1

    公开(公告)日:2008-06-26

    申请号:US11777929

    申请日:2007-07-13

    IPC分类号: H01L21/324

    摘要: A method of performing a thermal process using a bake plate of a track lithography tool. The bake plate includes a plurality of heater zones. The method includes providing a first drive signal to a first electrode in electrical communication with a process surface of the bake plate. The first electrode is associated with a first heater zone of the plurality of heater zones and each of the plurality of heater zones is adapted to receive a control voltage. The method also includes moving a semiconductor substrate toward the process surface of the bake plate, receiving a first response signal from the first electrode, processing the first response signal to determine a first capacitance value associated with a first gap between the first electrode and a first portion of the semiconductor substrate, and providing a measurement signal related to the first capacitance value.

    摘要翻译: 使用轨道光刻工具的烘烤板进行热处理的方法。 烘烤板包括多个加热器区域。 该方法包括向与烘烤板的处理表面电连通的第一电极提供第一驱动信号。 第一电极与多个加热器区域的第一加热器区域相关联,并且多个加热器区域中的每一个适于接收控制电压。 该方法还包括将半导体衬底朝向烘烤板的处理表面移动,从第一电极接收第一响应信号,处理第一响应信号以确定与第一电极和第一电极之间的第一间隙相关联的第一电容值 并且提供与第一电容值相关的测量信号。

    METHOD AND SYSTEM FOR PERFORMING ELECTROSTATIC CHUCK CLAMPING IN TRACK LITHOGRAPHY TOOLS
    6.
    发明申请
    METHOD AND SYSTEM FOR PERFORMING ELECTROSTATIC CHUCK CLAMPING IN TRACK LITHOGRAPHY TOOLS 审中-公开
    轨道切割工具中静电切割夹具的方法和系统

    公开(公告)号:US20090109595A1

    公开(公告)日:2009-04-30

    申请号:US11933152

    申请日:2007-10-31

    IPC分类号: H01L21/683

    CPC分类号: H01L21/6831

    摘要: A method of clamping/declamping a semiconductor wafer on an electrostatic chuck in ambient air includes disposing the semiconductor wafer at a predetermined distance above a dielectric surface of the electrostatic chuck having one or more electrodes and applying a first voltage greater than a predetermined threshold to the one or more electrodes of the electrostatic chuck for a first time period. The method includes reducing the first voltage to a second voltage substantially equal to a self bias potential of the semiconductor wafer after the first time period. The method includes maintaining the second voltage for a second time period and adjusting the second voltage to a third voltage characterized by a polarity opposite to that of the first voltage and a magnitude smaller than the predetermined threshold. The method includes reducing the third voltage to a fourth voltage substantially equal to the second voltage after a third time period.

    摘要翻译: 在环境空气中将静电卡盘上的半导体晶片夹紧/放大的方法包括将半导体晶片设置在具有一个或多个电极的静电卡盘的电介质表面之上的预定距离处,并将大于预定阈值的第一电压施加到 静电卡盘的一个或多个电极第一时间段。 该方法包括在第一时间段之后将第一电压降低到基本上等于半导体晶片的自偏压电位的第二电压。 该方法包括将第二电压维持第二时间段,并将第二电压调整到第三电压,其特征在于具有与第一电压相反的极性和小于预定阈值的幅度。 该方法包括在第三时间段之后将第三电压降低到基本上等于第二电压的第四电压。

    Multi-stage flow control apparatus and method of use
    9.
    发明申请
    Multi-stage flow control apparatus and method of use 审中-公开
    多级流量控制装置及其使用方法

    公开(公告)号:US20070294870A1

    公开(公告)日:2007-12-27

    申请号:US11475365

    申请日:2006-06-27

    IPC分类号: H01L21/67

    摘要: A multi-stage flow control apparatus for use during the processing of a semiconductor substrate is provided. The multi-stage flow control apparatus includes a first inlet and a second inlet, an outlet, and a first throttle valve stage coupled to the first inlet. The first throttle valve stage includes a first throttle valve plug located within the first throttle valve stage. The first throttle valve plug is configured to control the amount of airflow through the first throttle valve stage by modulating the distance between the first throttle valve plug and faces of the first throttle valve stage. The multi-stage flow control apparatus further includes a second throttle valve stage coupled to the second inlet. The second throttle valve stage includes a second throttle valve plug located within the second throttle valve stage. The second throttle valve plug is configured to control the amount of airflow through the second throttle valve stage by modulating the distance between the second throttle valve plug and faces of the second throttle valve stage. In addition, the multi-stage flow control apparatus includes a floating plunger stage coupled to the throttle valve stage.

    摘要翻译: 提供了一种在半导体衬底的处理期间使用的多级流量控制装置。 多级流量控制装置包括第一入口和第二入口,出口以及联接到第一入口的第一节流阀级。 第一节流阀级包括位于第一节流阀级内的第一节流阀塞。 第一节流阀塞构造成通过调节第一节流阀塞与第一节流阀级的面之间的距离来控制通过第一节流阀级的气流量。 多级流量控制装置还包括联接到第二入口的第二节流阀级。 第二节流阀级包括位于第二节流阀级内的第二节流阀塞。 第二节流阀塞构造成通过调节第二节流阀塞与第二节流阀级的面之间的距离来控制通过第二节流阀级的气流量。 此外,多级流量控制装置包括联接到节流阀级的浮动柱塞级。

    Temperature controlled chamber
    10.
    发明授权
    Temperature controlled chamber 失效
    温度控制室

    公开(公告)号:US06598559B1

    公开(公告)日:2003-07-29

    申请号:US09534834

    申请日:2000-03-24

    IPC分类号: C23C1600

    CPC分类号: H01L21/67115 C23C16/481

    摘要: A substrate processing chamber 25 comprising a substrate support 85, and a wall 24 about the substrate support 85, the wall 24 having a radiation absorbing surface 36 adapted to preferentially absorb radiation having wavelengths in the visible or infra-red spectrum.

    摘要翻译: 衬底处理室25包括衬底支撑件85和围绕衬底支撑件85的壁24,壁24具有适于优先吸收具有可见光或红外光谱波长的辐射的辐射吸收表面36。