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    Method of manufacturing an on-chip inductor having improved quality factor
    1.
    发明授权
    Method of manufacturing an on-chip inductor having improved quality factor 有权
    制造具有改善品质因素的片上电感器的方法

    公开(公告)号：US06979608B2

    公开(公告)日：2005-12-27

    申请号：US10673874

    申请日：2003-09-29

    申请人： Harry Contopanagos ,  Christos Komninakis ,  Sissy Kyriazidou

    发明人： Harry Contopanagos ,  Christos Komninakis ,  Sissy Kyriazidou

    IPC分类号： H04B1/40 ,  H01L21/8238 ,  H01L21/20 ,  H01L21/8234 ,  H01L21/8244

    CPC分类号： H04B1/406

    摘要： An on-chip inductor may be fabricated by creating at least one dielectric layer, creating at least one conductive winding on the at least one dielectric layer and creating: (1) a P-well layer having a major surface parallel to a major surface of the dielectric layer, (2) field oxide layer having a major surface parallel to a major surface of the dielectric layer, (3) P-well and field oxide layer, or (4) a poly-silicon layer having a major surface parallel to a major surface of the dielectric layer.

    摘要翻译： 可以通过产生至少一个介电层来制造片上电感器，在至少一个电介质层上产生至少一个导电绕组，并产生：（1）P阱层，其主表面平行于 电介质层，（2）具有平行于电介质层的主表面的主表面的场氧化物层，（3）P阱和场氧化物层，或（4）主表面平行于 电介质层的主表面。

    High Q on-chip inductor
    2.
    发明授权
    High Q on-chip inductor 失效
    高Q片上电感

    公开(公告)号：US06809623B2

    公开(公告)日：2004-10-26

    申请号：US10087614

    申请日：2002-03-01

    申请人： Sissy Kyriazidou ,  Harry Contopanagos ,  Reza Rofougaran

    发明人： Sissy Kyriazidou ,  Harry Contopanagos ,  Reza Rofougaran

    IPC分类号： H01F500

    CPC分类号： H01L27/08 ,  H01F17/0006 ,  H01F17/0013 ,  Y10T29/4902 ,  Y10T29/49069 ,  Y10T29/49071 ,  Y10T29/49073 ,  Y10T29/49082 ,  Y10T29/4914

    摘要： A high Q on-chip inductor includes a primary winding and an auxiliary winding that is coupled to receive a proportionally opposite representation of an input of the primary winding. Further, the auxiliary winding has an admittance that is greater than the admittance of the primary winding thereby yielding an asymmetry in the admittances. As such, a push/pull mechanism is obtained in a 2-port system (e.g., 1st and 2nd nodes of the primary winding) that produces a large Q factor for an on-chip inductor.

    摘要翻译： 高Q片上电感器包括初级绕组和辅助绕组，其被耦合以接收初级绕组的输入的成比例地相反的表示。 此外，辅助绕组具有大于初级绕组的导纳的导纳，从而导致导电不对称。 因此，在片内电感器产生大的Q因子的2端口系统（例如，初级绕组的第1和第2个节点）中获得推/拉机构。

    On-chip inductor having a square geometry and high Q factor and method of manufacture thereof
    6.
    发明授权
    On-chip inductor having a square geometry and high Q factor and method of manufacture thereof 有权
    具有正方形几何形状和高Q因子的片上电感器及其制造方法

    公开(公告)号：US06937128B2

    公开(公告)日：2005-08-30

    申请号：US10074158

    申请日：2002-02-12

    申请人： Harry Contopanagos ,  Sissy Kyriazidou

    发明人： Harry Contopanagos ,  Sissy Kyriazidou

    IPC分类号： H01L27/08 ,  H01F5/00

    CPC分类号： H01L27/08 ,  Y10T29/4902 ,  Y10T29/49071 ,  Y10T29/49073

    摘要： An on-chip inductor and/or on-chip transformer includes at least one dielectric layer and at least one conductive winding on the at least one dielectric layer. The conductive winding has a substantially square geometry and has at least its exterior corners geometrically shaped to reduce impedance of the conductive winding at a particular operating frequency. Since the quality factor of an on-chip inductor is inversely proportional to the effective series impedance of an inductor at an operating frequency, by reducing the effective series impedance, the quality factor is increased.

    摘要翻译： 片上电感器和/或片上变压器包括至少一个电介质层和至少一个电介质层上的至少一个导电绕组。 导电绕组具有基本上正方形的几何形状，并且至少具有几何形状的外部角，以减小导电绕组在特定工作频率下的阻抗。 由于片上电感的品质因数与工作频率下的电感器的有效串联阻抗成反比，通过降低有效串联阻抗，提高了品质因数。