COPPER COMPLEXES FOR OPTOELECTRONIC APPLICATIONS
    1.
    发明申请
    COPPER COMPLEXES FOR OPTOELECTRONIC APPLICATIONS 有权
    用于光电应用的铜复合材料

    公开(公告)号:US20120184738A1

    公开(公告)日:2012-07-19

    申请号:US13380361

    申请日:2010-06-24

    IPC分类号: C07F9/28

    摘要: The invention relates to copper(I) complexes of the formula (A) with X═Cl, Br or I (independently of one another) N*∩E=bidentate ligand, with E=phosphinyl/arsenyl radical of the form R2E (where R=alkyl, aryl, alkoxy, phenoxy, amide); N*=imine function. Which is part of an aromatic group selected from pyridyl, pyrimidyl, pyridazinyl, triazinyl, oxazolyl, thiazolyl and imidazolyl, the aromatic group optionally having at least one substituent for increasing the solubility of the copper(I) complex in an organic solvent, and “∩”=at least one carbon atom, which is likewise part of the aromatic group, the carbon atom being located both directly adjacent to the imine nitrogen atom and to the phosphorus or arsenic atom, and also to the use thereof in optoelectronic assemblies, especially in OLEDs.

    摘要翻译: 本发明涉及式(A)与X = Cl,Br或I(彼此独立)N(∩E)=二齿配体的式(A)的铜(I)络合物,其中E = R2E形式的氧化基/ R =烷基,芳基,烷氧基,苯氧基,酰胺); N * =亚胺功能。 哪个是选自吡啶基,嘧啶基,哒嗪基,三嗪基,恶唑基,噻唑基和咪唑基的芳族基团的一部分,芳族基团任选具有至少一个用于增加铜(I)络合物在有机溶剂中的溶解度的取代基, ∩“=至少一个碳原子,其同样是芳族基团的一部分,碳原子位于与亚胺氮原子直接相邻的位置以及磷或砷原子,以及其在光电子组件中的用途,特别是 在OLED中。

    Copper complexes for optoelectronic applications
    2.
    发明授权
    Copper complexes for optoelectronic applications 有权
    用于光电子应用的铜络合物

    公开(公告)号:US09012639B2

    公开(公告)日:2015-04-21

    申请号:US13380361

    申请日:2010-06-24

    摘要: The invention relates to copper(I) complexes of the formula A wherein X=Cl, Br or I (independently of one another); N*∩E=a bidentate ligand, wherein E=a phosphinyl group including a phosphorus atom or an arsenyl group including an arsenic atom, wherein the phosphinyl group or the arsenyl group is combined with R in the form of R2E (where R=alkyl, aryl, alkoxy, or phenoxy; N*=imine function which is part of an aromatic group selected from pyridyl, pyrimidyl, pyridazinyl, triazinyl, oxazolyl, thiazolyl and imidazolyl, the aromatic group optionally having at least one substituent to increase the solubility of the copper(I) complex in an organic solvent; and ∩=at least one carbon atom which is likewise part of the aromatic group. The carbon atom is located directly adjacent both to the imine nitrogen atom, coordinating to Cu in the case of a bridging ligand and to the phosphorus or arsenic atom. The invention also relates to the use of the copper(I) complexes in optoelectronic assemblies, especially in Organic Light Emitting Diodes (OLEDs).

    摘要翻译: 本发明涉及式A的铜(I)络合物,其中X = Cl,Br或I(彼此独立); N *∩E=双齿配体,其中E =包括磷原子或包含砷原子的砷基的氧膦基,其中所述氧膦基或所述亚砷基与R 2的形式R(其中R =烷基 ,芳基,烷氧基或苯氧基; N * =亚胺官能团,其是选自吡啶基,嘧啶基,哒嗪基,三嗪基,恶唑基,噻唑基和咪唑基的芳族基团的一部分,芳族基团任选具有至少一个取代基以增加溶解度 在有机溶剂中的铜(I)络合物;∩=至少一个同样是芳族基团一部分的碳原子,碳原子位于与亚胺氮原子直接相邻的位置,在与 桥联配体和磷或砷原子。本发明还涉及铜(I)配合物在光电组件中的应用,特别是在有机发光二极管(OLED)中。

    Singlet harvesting with dual-core copper (I) complexes for optoelectronic devices
    4.
    发明授权
    Singlet harvesting with dual-core copper (I) complexes for optoelectronic devices 有权
    用于光电子器件的双核铜(I)配合物的单线收割

    公开(公告)号:US09537117B2

    公开(公告)日:2017-01-03

    申请号:US14236202

    申请日:2012-08-02

    摘要: The invention relates to dimeric copper(I) complexes according to formula A, in particular as emitters in optoelectronic devices such as organic light emitting diodes (OLEDs) and other devices wherein: Cu: Cu(I), X: Cl, Br, I, SCN, CN, and/or alkynyl and P∩N: a phosphine ligand substituted with a N-heterocycle.

    摘要翻译: 铜(I)配合物(I)是新的。 式(I)的铜(I)络合物是新的。 Cu:Cu(I) X:Cl,Br,I,SCN,CN和/或(R6-三键); R6:R; PN:式(II)的膦配体(由N-杂环膦取代,优选式(IIIa) - (IIIt)的芳族6-或5-元环; E:C或N; E 1:C或N, 不被H取代; a,b:单键或双键; R4,R5:(CH3-(CH2)n)(任选支链或环状)或(杂)芳基(任选被烷基取代, ,Cl,Br或I,-SiR7或-OR7); n:0-20,优选大于6,其中R4和R5直接连接到(II)的P; R7:R1; R:芳基,优选苯基 ,烯基或炔基(全部任选被烷基,卤素,优选F,Cl,Br或I,-SiR 7或-OR 7取代)或(CH 3 - (CH 2)n1-)(任选地被支链或被卤素 ,优选F,Cl,Br或I); n1:0-20; R1,R2,R3:R或H;或R + R1 + R2 + R3:任选的稠环体系,其中R不含H. 还包括独立权利要求,用于:(1)使用(I)发光,优选在光电器件的发射极层中发射光;(2) 使用(I)的电子器件,包括通过胶体悬浮液或通过升华以湿化学方式沉积(I)在固体基底上; 和(3)包括(I)的光电子器件,其表现出最低三重态和50-2500cm -1>的上覆单线态之间的距离。 [图像] [图像] [图像] [图像] [图像] [图像] [图像] [图像]。