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    Pattern forming method
    2.
    发明授权
    Pattern forming method 有权
    图案形成方法

    公开(公告)号：US07892722B2

    公开(公告)日：2011-02-22

    申请号：US11129488

    申请日：2005-05-16

    申请人： Haruki Inabe ,  Shinichi Kanna ,  Hiromi Kanda

    发明人： Haruki Inabe ,  Shinichi Kanna ,  Hiromi Kanda

    IPC分类号： G03F1/00

    CPC分类号： G03F7/2041 ,  G03F7/168 ,  G03F7/70341

    摘要： A pattern forming method includes (a) a step of forming a resist film on a substrate, (b) a pre-wet step of spreading a pre-wet solution on the resist film and after a fixed time, removing the pre-wet solution, and (c) a step of subjecting the resist film on the substrate to exposure through an immersion liquid.

    摘要翻译： 图案形成方法包括（a）在基板上形成抗蚀剂膜的步骤，（b）将预湿溶液铺展在抗蚀剂膜上的预湿步骤，并且在固定时间之后，除去预湿溶液 ，和（c）使基板上的抗蚀剂膜经过浸没液体曝光的步骤。

    Pattern forming method
    4.
    发明授权
    Pattern forming method 有权
    图案形成方法

    公开(公告)号：US07842452B2

    公开(公告)日：2010-11-30

    申请号：US12331136

    申请日：2008-12-09

    申请人： Shinichi Kanna ,  Haruki Inabe ,  Hiromi Kanda

    发明人： Shinichi Kanna ,  Haruki Inabe ,  Hiromi Kanda

    IPC分类号： G03F7/30

    CPC分类号： G03F7/0758 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/106 ,  Y10S430/111

    摘要： A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, and (v) a step of developing the resist coating.

    摘要翻译： 使用正性抗蚀剂组合物的图案形成方法包括：（A）能够在酸作用下增加其在碱性显影剂中的溶解度的无硅树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）具有选自（X）碱溶性基团中的至少一种的基团的含硅树脂（XI）能够在碱性显影剂的作用下分解的基团和增加树脂的溶解度（C ）和（XII）能够在酸的作用下分解并增加树脂（C）在碱性显影剂中的溶解度的基团，和（D）溶剂，该方法包括：（i）步骤 将正性抗蚀剂组合物施加到基材上以形成抗蚀剂涂层，（ii）通过浸渍液体将抗蚀剂涂层曝光于光的步骤，（iii）去除残留在抗蚀剂涂层上的浸渍液体的步骤，（iv ）加热抗蚀剂涂层的步骤，和（v）显影抗蚀涂层的步骤。

    Positive resist composition and method of pattern formation with the same
    5.
    发明申请
    Positive resist composition and method of pattern formation with the same 有权
    积极的抗蚀剂组成和图案形成方法相同

    公开(公告)号：US20070178405A1

    公开(公告)日：2007-08-02

    申请号：US11492123

    申请日：2006-07-25

    申请人： Hiromi Kanda ,  Shinichi Kanna ,  Haruki Inabe

    发明人： Hiromi Kanda ,  Shinichi Kanna ,  Haruki Inabe

    IPC分类号： G03C1/00

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40

    摘要： A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid.

    摘要翻译： 一种正型抗蚀剂组合物，其包含：（A）通过酸的作用在碱性显影液中具有增强的溶解度的树脂; （B）在用光化射线或辐射照射时产生酸的化合物; （C）含有选自（x）〜（z）中的至少一种基团的含氟化合物; 和（F）溶剂，以及组合物的图案形成方法：（x）碱溶性基团; （y）通过碱性显影液的作用分解以提高在碱性显影液中的溶解度的基团; 和（z）通过酸的作用分解的基团。

    POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME
    7.
    发明申请
    POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME 审中-公开
    积极抵抗组合物及其形成图案的方法

    公开(公告)号：US20080305433A1

    公开(公告)日：2008-12-11

    申请号：US12193302

    申请日：2008-08-18

    申请人： Hiromi KANDA ,  Shinichi Kanna ,  Haruki Inabe

    发明人： Hiromi KANDA ,  Shinichi Kanna ,  Haruki Inabe

    IPC分类号： G03C1/053

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/091 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/322 ,  G03F7/38 ,  G03F7/40

    摘要： A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid.

    摘要翻译： 一种正型抗蚀剂组合物，其包含：（A）通过酸的作用在碱性显影液中具有增强的溶解度的树脂; （B）在用光化射线或辐射照射时产生酸的化合物; （C）含有选自（x）〜（z）中的至少一种基团的含氟化合物; 和（F）溶剂，以及组合物的图案形成方法：（x）碱溶性基团; （y）通过碱性显影液的作用分解以提高在碱性显影液中的溶解度的基团; 和（z）通过酸的作用分解的基团。

    Pattern forming method
    8.
    发明申请
    Pattern forming method 有权
    图案形成方法

    公开(公告)号：US20070172769A1

    公开(公告)日：2007-07-26

    申请号：US11656527

    申请日：2007-01-23

    申请人： Shinichi Kanna ,  Haruki Inabe ,  Hiromi Kanda

    发明人： Shinichi Kanna ,  Haruki Inabe ,  Hiromi Kanda

    IPC分类号： G03C5/00

    CPC分类号： G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

    摘要： A pattern forming method which uses a positive resist composition comprises: (A) a fluorine-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a fluorine-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkali developer and increasing solubility of the resin (C) in an alkaline developer and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer; and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating; (ii) a step of exposing the resist coating to light via an immersion liquid; (iii) a step of removing the immersion liquid remaining on the resist coating; (iv) a step of heating the resist coating; and (v) a step of developing the resist coating.

    摘要翻译： 使用正性抗蚀剂组合物的图案形成方法包括：（A）能够在酸的作用下增加其在碱性显影剂中的溶解度的无氟树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）具有选自（X）碱溶性基团（XI）中的至少一种基团的含氟树脂，（XI）能够在碱性显影剂的作用下分解的基团和增加树脂的溶解度（C ）和（XII）能够在酸的作用下分解并增加树脂（C）在碱性显影剂中的溶解度的基团; 和（D）溶剂，所述方法包括：（i）将正性抗蚀剂组合物施加到基材以形成抗蚀剂涂层的步骤; （ii）通过浸没液体使抗蚀剂涂层曝光的步骤; （iii）去除残留在抗蚀剂涂层上的浸渍液体的步骤; （iv）加热抗蚀剂涂层的步骤; 和（v）开发抗蚀剂涂层的步骤。

    Pattern forming method
    9.
    发明授权
    Pattern forming method 有权
    图案形成方法

    公开(公告)号：US07700260B2

    公开(公告)日：2010-04-20

    申请号：US11656527

    申请日：2007-01-23

    申请人： Shinichi Kanna ,  Haruki Inabe ,  Hiromi Kanda

    发明人： Shinichi Kanna ,  Haruki Inabe ,  Hiromi Kanda

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

    摘要： A pattern forming method which uses a positive resist composition comprises: (A) a fluorine-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a fluorine-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkali developer and increasing solubility of the resin (C) in an alkaline developer and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer; and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating; (ii) a step of exposing the resist coating to light via an immersion liquid; (iii) a step of removing the immersion liquid remaining on the resist coating; (iv) a step of heating the resist coating; and (v) a step of developing the resist coating.

    摘要翻译： 使用正性抗蚀剂组合物的图案形成方法包括：（A）能够在酸的作用下增加其在碱性显影剂中的溶解度的无氟树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）具有选自（X）碱溶性基团（XI）中的至少一种基团的含氟树脂，（XI）能够在碱性显影剂的作用下分解的基团和增加树脂的溶解度（C ）和（XII）能够在酸的作用下分解并增加树脂（C）在碱性显影剂中的溶解度的基团; 和（D）溶剂，所述方法包括：（i）将正性抗蚀剂组合物施加到基材以形成抗蚀剂涂层的步骤; （ii）通过浸没液体使抗蚀剂涂层曝光的步骤; （iii）去除残留在抗蚀剂涂层上的浸渍液体的步骤; （iv）加热抗蚀剂涂层的步骤; 和（v）开发抗蚀剂涂层的步骤。

    Pattern forming method
    10.
    发明授权
    Pattern forming method 有权
    图案形成方法

    公开(公告)号：US07482112B2

    公开(公告)日：2009-01-27

    申请号：US11655960

    申请日：2007-01-22

    申请人： Shinichi Kanna ,  Haruki Inabe ,  Hiromi Kanda

    发明人： Shinichi Kanna ,  Haruki Inabe ,  Hiromi Kanda

    IPC分类号： G03C5/00 ,  G03F7/00

    CPC分类号： G03F7/0758 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  Y10S430/106 ,  Y10S430/111

    摘要： A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, and (v) a step of developing the resist coating.

    摘要翻译： 使用正性抗蚀剂组合物的图案形成方法包括：（A）能够在酸作用下增加其在碱性显影剂中的溶解度的无硅树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）具有选自（X）碱溶性基团中的至少一种的基团的含硅树脂（XI）能够在碱性显影剂的作用下分解的基团和增加树脂的溶解度（C ）和（XII）能够在酸的作用下分解并增加树脂（C）在碱性显影剂中的溶解度的基团，和（D）溶剂，该方法包括：（i）步骤 将正性抗蚀剂组合物施加到基材上以形成抗蚀剂涂层，（ii）通过浸渍液体将抗蚀剂涂层曝光于光的步骤，（iii）去除残留在抗蚀剂涂层上的浸渍液体的步骤，（iv ）加热抗蚀剂涂层的步骤，和（v）显影抗蚀涂层的步骤。