公开(公告)号：US09761254B2

公开(公告)日：2017-09-12

申请号：US15363168

申请日：2016-11-29

申请人： Headway Technologies, Inc.

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Zhi Gang Bai

IPC分类号： G11B5/39 ,  G11B5/11 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  B82Y40/00 ,  H01L43/02 ,  H01L43/08

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/02 ,  H01L43/08

摘要： A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA), which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization, and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After forming a sensor sidewall that stops in the seed layer or on the bottom shield, a conformal insulation layer is deposited. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths

公开(公告)号：US20170077391A1

公开(公告)日：2017-03-16

申请号：US15363168

申请日：2016-11-29

申请人： Headway Technologies, Inc.

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Zhi Gang Bai

IPC分类号： H01L43/02 ,  G11B5/39 ,  G01R33/09 ,  H01L43/08 ,  H01F10/32

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/02 ,  H01L43/08

摘要： A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA), which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization, and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After forming a sensor sidewall that stops in the seed layer or on the bottom shield, a conformal insulation layer is deposited. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths

摘要翻译： 公开了具有垂直磁各向异性（PMA）的自由层（FL）的MR传感器，其不需要相邻的硬偏置结构来稳定自由层磁化，并且使屏蔽-FL相互作用最小化。 在TMR实施例中，种子层，自由层，结层，参考层和钉扎层依次形成在底部屏蔽上。 在形成在种子层或底部屏蔽物中停止的传感器侧壁之后，沉积保形绝缘层。 此后，在绝缘层上形成顶部屏蔽，并且包括通过窄的读取间隙与FL分离的侧面屏蔽。 当PMA大于FL自扫描场时，传感器可缩放到宽度<50 nm。 有效偏置场对传感器纵横比不敏感，这使得高条纹和窄宽度传感器对于高RA TMR配置是可行的。