公开(公告)号：US20120294025A1

公开(公告)日：2012-11-22

申请号：US13475486

申请日：2012-05-18

申请人： Hee Dong KIM ,  Moo Youn PARK ,  Soo Hwan LEE ,  Hee Seok PARK

发明人： Hee Dong KIM ,  Moo Youn PARK ,  Soo Hwan LEE ,  Hee Seok PARK

IPC分类号： F21V13/04 ,  H01L33/60

CPC分类号： F21S48/1388 ,  F21S41/143 ,  F21S41/16 ,  F21S41/255 ,  F21S41/32 ,  F21S41/323 ,  F21S41/37 ,  H01L33/44 ,  H01L33/46 ,  H01L33/50 ,  H01L33/501 ,  H01L33/507 ,  H01L33/60 ,  H01L2933/0091

摘要： An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.

摘要翻译： 根据本发明的实施例的LED组件可以通过在LED芯片之间采用第一反射层来改善在LED芯片之间产生的暗区域。 通过在LED芯片和荧光体层之间采用透明光学层或包含散射粒子的光学层，可以避免LED芯片与荧光体层之间的直接接触，从而防止低的光提取效率。 此外，通过在LED芯片，光学层和荧光体层的侧表面上采用第二反射层，可以获得相对较高的对比度。 LED组件可以通过反射层增强对比度，同时通过在荧光体层中包括散射粒子来提高光提取效率。

公开(公告)号：US20100176374A1

公开(公告)日：2010-07-15

申请号：US12352941

申请日：2009-01-13

申请人： Jae Woong HAN ,  Hee Seok PARK ,  Seong Suk LEE ,  Soo Min LEE

发明人： Jae Woong HAN ,  Hee Seok PARK ,  Seong Suk LEE ,  Soo Min LEE

IPC分类号： H01L29/66

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A nitride semiconductor device according to an aspect of the invention may include: first and second conductive nitride semiconductor layers; and an active layer having a DH structure located between the first and second conductive nitride semiconductor layers, and including a single quantum well structure active layer having the single quantum well structure includes at least one polarization relaxation layer formed of a nitride single crystal having a higher energy band gap than the quantum well.

摘要翻译： 根据本发明的一个方面的氮化物半导体器件可以包括：第一和第二导电氮化物半导体层; 并且具有位于第一和第二导电氮化物半导体层之间的DH结构的有源层，并且包括具有单量子阱结构的单量子阱结构有源层包括至少一个偏振弛豫层，该偏振弛豫层由具有较高 能带隙比量子阱。