Organic light emitting diode device and method for fabricating the same
    1.
    发明授权
    Organic light emitting diode device and method for fabricating the same 有权
    有机发光二极管装置及其制造方法

    公开(公告)号:US08564194B2

    公开(公告)日:2013-10-22

    申请号:US11640398

    申请日:2006-12-18

    IPC分类号: H01J9/24 H01J1/62 H01J63/04

    摘要: An organic light emitting diode device includes a gate electrode of a first transistor on a substrate; a gate insulation film on the gate electrode of the first transistor; a source electrode of a second transistor on the gate insulation film and overlapping with the gate electrode of the first transistor; a contact hole exposing the gate electrode of the first transistor and the source electrode of the second transistor; a conductive wiring in the contact hole, for electrically connecting the gate electrode of the first transistor and the source electrode of the second transistor.

    摘要翻译: 一种有机发光二极管器件包括:衬底上的第一晶体管的栅电极; 第一晶体管的栅电极上的栅极绝缘膜; 栅极绝缘膜上的第二晶体管的源电极,并与第一晶体管的栅电极重叠; 暴露第一晶体管的栅电极和第二晶体管的源电极的接触孔; 接触孔中的导电布线,用于将第一晶体管的栅电极和第二晶体管的源电极电连接。

    Organic light emitting diode device and method for fabricating the same
    2.
    发明申请
    Organic light emitting diode device and method for fabricating the same 有权
    有机发光二极管装置及其制造方法

    公开(公告)号:US20070152574A1

    公开(公告)日:2007-07-05

    申请号:US11640398

    申请日:2006-12-18

    IPC分类号: H01J1/62

    摘要: An organic light emitting diode device includes a gate electrode of a first transistor on a substrate; a gate insulation film on the gate electrode of the first transistor; a source electrode of a second transistor on the gate insulation film and overlapping with the gate electrode of the first transistor; a contact hole exposing the gate electrode of the first transistor and the source electrode of the second transistor; a conductive wiring in the contact hole, for electrically connecting the gate electrode of the first transistor and the source electrode of the second transistor.

    摘要翻译: 一种有机发光二极管器件包括:衬底上的第一晶体管的栅电极; 第一晶体管的栅电极上的栅极绝缘膜; 栅极绝缘膜上的第二晶体管的源电极,并与第一晶体管的栅电极重叠; 暴露第一晶体管的栅电极和第二晶体管的源电极的接触孔; 接触孔中的导电布线,用于将第一晶体管的栅电极和第二晶体管的源电极电连接。

    Display device and method of manufacturing the same
    3.
    发明授权
    Display device and method of manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号:US08030106B2

    公开(公告)日:2011-10-04

    申请号:US12497101

    申请日:2009-07-02

    IPC分类号: H01L21/84

    摘要: A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line.

    摘要翻译: 一种制造显示装置的方法包括:在基板上形成栅电极,在栅电极上形成栅极绝缘层,在栅极绝缘层上形成有源层,由外部多晶硅制成的栅电极,由内在的 多晶硅; 在所述有源层上形成蚀刻停止层; 在蚀刻停止器上形成彼此间隔开的源极和漏极; 在所述有源层的一侧和所述源极之间以及所述有源层和所述漏电极的相对侧之间形成欧姆接触层; 形成连接到栅电极的栅极线; 并形成跨越栅极线的数据线。

    Array substrate for display device
    4.
    发明授权
    Array substrate for display device 有权
    阵列基板用于显示装置

    公开(公告)号:US08785257B2

    公开(公告)日:2014-07-22

    申请号:US12829705

    申请日:2010-07-02

    摘要: Disclosed is array substrate including a pixel region having a switching region, a driving region and a storage region. A switching TFT in the switching region includes a first gate electrode, a first gate insulating layer, a switching active layer on the first gate insulating layer, a switching source electrode on a first switching ohmic contact layer, and a switching drain electrode on a second switching ohmic contact layer; a driving TFT in the driving region is connected to the switching TFT and includes a first gate electrode, a second gate insulating layer, a driving active layer on the second gate insulating layer, a driving source electrode on a first driving ohmic contact layer, and a driving drain electrode on a second driving ohmic contact layer; wherein at least one of the switching and driving TFTs further includes a second gate electrode over the switching or driving active layers.

    摘要翻译: 公开了包括具有开关区域,驱动区域和存储区域的像素区域的阵列基板。 开关区域中的开关TFT包括第一栅极电极,第一栅极绝缘层,第一栅极绝缘层上的开关有源层,第一开关欧姆接触层上的开关源电极和第二栅极绝缘层上的开关漏极电极 开关欧姆接触层; 驱动区域中的驱动TFT连接到开关TFT,并且包括第一栅极电极,第二栅极绝缘层,第二栅极绝缘层上的驱动有源层,第一驱动欧姆接触层上的驱动源极,以及 在第二驱动欧姆接触层上的驱动漏电极; 其中所述开关和驱动TFT中的至少一个还包括位于所述开关或驱动有源层上的第二栅电极。

    ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    5.
    发明申请
    ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    用于显示装置的阵列基板及其制造方法

    公开(公告)号:US20110114962A1

    公开(公告)日:2011-05-19

    申请号:US12795430

    申请日:2010-06-07

    IPC分类号: H01L33/16 H01L21/336

    摘要: An array substrate for a display device includes a gate electrode on a substrate; a gate insulating layer on the gate electrode and having the same plane area and the same plane shape as the gate electrode; an active layer on the gate insulating layer and exposing an edge of the gate insulating layer; an interlayer insulating layer on the active layer and including first and second active contact holes, the first and second active contact holes respectively exposing both sides of the active layers; first and second ohmic contact layers contacting the active layer through the first and second active contact holes, respectively; a source electrode on the first ohmic contact layer; a drain electrode on the second ohmic contact layer; a data line on the interlayer insulating layer and connected to the source electrode; a first passivation layer on the source electrode, the drain electrode and the data line, the first passivation layer, the interlayer insulating layer and the gate insulating layer have a first gate contact hole exposing a portion of the gate electrode; a gate line on the first passivation layer and contacting the gate electrode through the first gate contact hole, the gate line crossing the data line; a second passivation layer on the gate line and having a drain contact hole exposing the drain electrode; and a pixel electrode on the second passivation layer and contacting the drain electrode through the contact hole.

    摘要翻译: 用于显示装置的阵列基板包括在基板上的栅电极; 栅电极上的栅极绝缘层,并且具有与栅电极相同的平面面积和相同的平面形状; 栅极绝缘层上的有源层,并露出栅极绝缘层的边缘; 所述有源层上的层间绝缘层包括第一和第二有源接触孔,所述第一和第二有源接触孔分别暴露有源层的两侧; 第一和第二欧姆接触层分别通过第一和第二有源接触孔与有源层接触; 在第一欧姆接触层上的源电极; 第二欧姆接触层上的漏电极; 在层间绝缘层上的与源电极连接的数据线; 源电极,漏电极和数据线上的第一钝化层,第一钝化层,层间绝缘层和栅极绝缘层具有暴露栅电极的一部分的第一栅极接触孔; 在第一钝化层上的栅极线,并通过第一栅极接触孔与栅电极接触,栅极线与数据线交叉; 栅极线上的第二钝化层,并具有暴露漏电极的漏极接触孔; 以及在所述第二钝化层上的像素电极,并且通过所述接触孔与所述漏电极接触。

    Array substrate and method of fabricating the same

    公开(公告)号:US20110017999A1

    公开(公告)日:2011-01-27

    申请号:US12591795

    申请日:2009-12-01

    申请人: Hee-Dong Choi

    发明人: Hee-Dong Choi

    IPC分类号: H01L33/00 H01L21/20

    摘要: An array substrate includes first and second gate electrodes on a substrate; a gate insulating layer on the first and second gate electrodes; first and second active layers on the gate insulating layer; an interlayer insulating layer on the first and second active layers; first to fourth ohmic contact layers respectively contacting both sides of the first active layer and both sides of the second active layer; first and second source electrodes and first and second drain electrodes respectively on the first, third, second and fourth ohmic contact layers; a data line connected to the first source electrode; a first passivation layer connected to the first gate electrode; a power line; one end and the other end of a connection electrode respectively connected to the first drain electrode and the second gate electrode; a second passivation layer; and a pixel electrode-connected to the second drain electrode.

    Method of fabricating array substrate
    7.
    发明申请
    Method of fabricating array substrate 有权
    阵列基板的制作方法

    公开(公告)号:US20100291741A1

    公开(公告)日:2010-11-18

    申请号:US12591501

    申请日:2009-11-20

    IPC分类号: H01L21/336

    摘要: A method of fabricating an array substrate includes sequentially forming a first metal layer, a first inorganic insulating layer and an intrinsic amorphous silicon layer on a substrate, the first metal layer including a first metallic material layer and a second metallic material layer; crystallizing the intrinsic amorphous silicon; forming a gate electrode, a gate line, a gate insulating layer and an active layer; forming an interlayer insulating layer including first and second contact holes respectively exposing both sides of the active layer; forming first and second ohmic contact patterns respectively contacting the both sides of the active layers, a source electrode, a drain electrode, and a data line connecting the source electrode; forming a passivation layer on the source electrode, the drain electrode; and forming a pixel electrode on the passivation layer and contacting the drain electrode.

    摘要翻译: 制造阵列基板的方法包括在基板上依次形成第一金属层,第一无机绝缘层和本征非晶硅层,所述第一金属层包括第一金属材料层和第二金属材料层; 结晶本征非晶硅; 形成栅电极,栅极线,栅绝缘层和有源层; 形成包括分别暴露有源层的两侧的第一和第二接触孔的层间绝缘层; 形成分别接触有源层的两侧的第一和第二欧姆接触图案,源电极,漏电极和连接源电极的数据线; 在源极上形成钝化层,漏电极; 以及在所述钝化层上形成像素电极并与所述漏电极接触。

    PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE HAVING IMPROVED CONTRAST RATIO
    8.
    发明申请
    PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE HAVING IMPROVED CONTRAST RATIO 有权
    平面切换模式液晶显示装置具有改进的对比度

    公开(公告)号:US20090190083A1

    公开(公告)日:2009-07-30

    申请号:US12421328

    申请日:2009-04-09

    IPC分类号: G02F1/1339 G02F1/1337

    CPC分类号: G02F1/134363 G02F1/13394

    摘要: An in-plane mode liquid crystal display device (LCD) is provided that is capable of improving a contrast ratio by blocking a light leakage region formed by a column spacer. The LCD includes gate and data lines that are formed on a substrate and cross each other to define pixels. A switching device, parallel first and second electrodes that generate a horizontal electric field, and a column spacer are disposed at each pixel. The column spacers are disposed between opposing substrates and are aligned with black matrix or the data lines such that the columns formed by the column spacers overlap with bent portions of the data lines.

    摘要翻译: 提供了一种面内模式液晶显示装置(LCD),其能够通过阻挡由柱间隔物形成的漏光区域来提高对比度。 LCD包括形成在基板上并彼此交叉以限定像素的栅极和数据线。 在每个像素处设置开关器件,产生水平电场的平行的第一和第二电极以及列间隔物。 柱间隔件设置在相对的基板之间并且与黑矩阵或数据线对准,使得由柱间隔件形成的列与数据线的弯曲部分重叠。

    Array substrate for liquid crystal display device
    9.
    发明申请
    Array substrate for liquid crystal display device 审中-公开
    液晶显示装置用阵列基板

    公开(公告)号:US20070296881A1

    公开(公告)日:2007-12-27

    申请号:US11639505

    申请日:2006-12-15

    IPC分类号: G02F1/1333

    摘要: An array substrate for an LCD device comprises a substrate having a display region and a non-display region at periphery of the display region; a gate line along a first direction on the substrate; first and second data lines along a second direction on the substrate; a ground line along the first direction in the non-display region and dividing the non-display region into first and second regions; a first electrostatic discharge protection circuit in the first region and connected to the first data line; and a second electrostatic discharge protection circuit in the second region and connected to the second data line.

    摘要翻译: 用于LCD装置的阵列基板包括在显示区域的周围具有显示区域和非显示区域的基板; 沿着基板上的第一方向的栅极线; 沿基板上的第二方向的第一和第二数据线; 在非显示区域中沿着第一方向的接地线,并且将非显示区域划分为第一和第二区域; 第一区域中的第一静电放电保护电路并连接到第一数据线; 以及第二区域中的第二静电放电保护电路,并连接到第二数据线。

    Display device and method of manufacturing the same
    10.
    发明授权
    Display device and method of manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号:US08455874B2

    公开(公告)日:2013-06-04

    申请号:US13229272

    申请日:2011-09-09

    IPC分类号: H01L21/00

    摘要: A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line.

    摘要翻译: 一种制造显示装置的方法包括:在基板上形成栅电极,在栅电极上形成栅极绝缘层,在栅极绝缘层上形成有源层,由外部多晶硅制成的栅电极,由内在的 多晶硅; 在所述有源层上形成蚀刻停止层; 在蚀刻停止器上形成彼此间隔开的源极和漏极; 在所述有源层的一侧和所述源极之间以及所述有源层和所述漏电极的相对侧之间形成欧姆接触层; 形成连接到栅电极的栅极线; 并形成跨越栅极线的数据线。