公开(公告)号：US08785257B2

公开(公告)日：2014-07-22

申请号：US12829705

申请日：2010-07-02

申请人： Hee-Dong Choi ,  Hye-Young Choi ,  Doo-Seok Yang

发明人： Hee-Dong Choi ,  Hye-Young Choi ,  Doo-Seok Yang

IPC分类号： H01L21/00 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1214 ,  H01L27/12 ,  H01L27/124 ,  H01L29/78648

摘要： Disclosed is array substrate including a pixel region having a switching region, a driving region and a storage region. A switching TFT in the switching region includes a first gate electrode, a first gate insulating layer, a switching active layer on the first gate insulating layer, a switching source electrode on a first switching ohmic contact layer, and a switching drain electrode on a second switching ohmic contact layer; a driving TFT in the driving region is connected to the switching TFT and includes a first gate electrode, a second gate insulating layer, a driving active layer on the second gate insulating layer, a driving source electrode on a first driving ohmic contact layer, and a driving drain electrode on a second driving ohmic contact layer; wherein at least one of the switching and driving TFTs further includes a second gate electrode over the switching or driving active layers.

摘要翻译： 公开了包括具有开关区域，驱动区域和存储区域的像素区域的阵列基板。 开关区域中的开关TFT包括第一栅极电极，第一栅极绝缘层，第一栅极绝缘层上的开关有源层，第一开关欧姆接触层上的开关源电极和第二栅极绝缘层上的开关漏极电极 开关欧姆接触层; 驱动区域中的驱动TFT连接到开关TFT，并且包括第一栅极电极，第二栅极绝缘层，第二栅极绝缘层上的驱动有源层，第一驱动欧姆接触层上的驱动源极，以及 在第二驱动欧姆接触层上的驱动漏电极; 其中所述开关和驱动TFT中的至少一个还包括位于所述开关或驱动有源层上的第二栅电极。

公开(公告)号：US08329523B2

公开(公告)日：2012-12-11

申请号：US12654584

申请日：2009-12-23

申请人： Hee-Dong Choi ,  Ki-Sul Cho ,  Hye-Young Choi ,  Doo-Seok Yang ,  Byeong-Gyu Roh

发明人： Hee-Dong Choi ,  Ki-Sul Cho ,  Hye-Young Choi ,  Doo-Seok Yang ,  Byeong-Gyu Roh

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L27/1288 ,  G02F2001/136236 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/3244 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/66765 ,  H01L2227/323

摘要： A method of fabricating an array substrate for a display device includes: forming a buffer layer on a substrate having a pixel region; sequentially forming a gate electrode of impurity-doped polycrystalline silicon, a gate insulating layer and an active layer of intrinsic polycrystalline silicon on the buffer layer in the pixel region; forming an interlayer insulating layer of an inorganic insulating material on the active layer; sequentially forming a source barrier pattern, a source ohmic contact layer and a source electrode on the interlayer insulating layer, sequentially forming a drain barrier pattern, a drain ohmic contact layer and a drain electrode on the interlayer insulating layer, and sequentially forming a first dummy pattern, a second dummy pattern and a data line on the interlayer insulating layer; forming a first passivation layer on a surface of the interlayer insulating layer including the source electrode, the drain electrode and the data line formed thereon; forming a gate line on the first passivation layer; forming a second passivation layer on a surface of the first passivation layer including the gate line formed thereon; and forming a pixel electrode on the second passivation layer.

摘要翻译： 一种制造用于显示装置的阵列基板的方法包括：在具有像素区域的基板上形成缓冲层; 在像素区域的缓冲层上依次形成杂质掺杂多晶硅的栅电极，栅极绝缘层和本征多晶硅的有源层; 在有源层上形成无机绝缘材料的层间绝缘层; 在层间绝缘层上顺序地形成源极阻挡图案，源极欧姆接触层和源电极，在层间绝缘层上依次形成漏极阻挡图案，漏极欧姆接触层和漏极，并依次形成第一虚拟 图案，第二虚设图案和数据线; 在包括形成在其上的源电极，漏电极和数据线的层间绝缘层的表面上形成第一钝化层; 在所述第一钝化层上形成栅极线; 在包括形成在其上的栅极线的第一钝化层的表面上形成第二钝化层; 以及在所述第二钝化层上形成像素电极。

公开(公告)号：US20110108846A1

公开(公告)日：2011-05-12

申请号：US12829705

申请日：2010-07-02

申请人： Hee-Dong Choi ,  Hye-Young Choi ,  Doo-Seok Yang

发明人： Hee-Dong Choi ,  Hye-Young Choi ,  Doo-Seok Yang

IPC分类号： H01L33/08

CPC分类号： H01L27/1214 ,  H01L27/12 ,  H01L27/124 ,  H01L29/78648

摘要： Disclosed is array substrate including a pixel region having a switching region, a driving region and a storage region. A switching TFT in the switching region includes a first gate electrode, a first gate insulating layer, a switching active layer on the first gate insulating layer, a switching source electrode on a first switching ohmic contact layer, and a switching drain electrode on a second switching ohmic contact layer; a driving TFT in the driving region is connected to the switching TFT and includes a first gate electrode, a second gate insulating layer, a driving active layer on the second gate insulating layer, a driving source electrode on a first driving ohmic contact layer, and a driving drain electrode on a second driving ohmic contact layer; wherein at least one of the switching and driving TFTs further includes a second gate electrode over the switching or driving active layers.

摘要翻译： 公开了包括具有开关区域，驱动区域和存储区域的像素区域的阵列基板。 开关区域中的开关TFT包括第一栅极电极，第一栅极绝缘层，第一栅极绝缘层上的开关有源层，第一开关欧姆接触层上的开关源电极和第二栅极绝缘层上的开关漏极电极 开关欧姆接触层; 驱动区域中的驱动TFT连接到开关TFT，并且包括第一栅极电极，第二栅极绝缘层，第二栅极绝缘层上的驱动有源层，第一驱动欧姆接触层上的驱动源极，以及 在第二驱动欧姆接触层上的驱动漏电极; 其中所述开关和驱动TFT中的至少一个还包括位于所述开关或驱动有源层上的第二栅电极。

公开(公告)号：US20100289023A1

公开(公告)日：2010-11-18

申请号：US12654584

申请日：2009-12-23

申请人： Hee-Dong Choi ,  Ki-Sul Cho ,  Hye-Young Choi ,  Doo-Seok Yang ,  Byeong-Gyu Roh

发明人： Hee-Dong Choi ,  Ki-Sul Cho ,  Hye-Young Choi ,  Doo-Seok Yang ,  Byeong-Gyu Roh

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L27/1288 ,  G02F2001/136236 ,  H01L21/02532 ,  H01L21/02667 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/3244 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/66765 ,  H01L2227/323

摘要： A method of fabricating an array substrate for a display device includes: forming a buffer layer on a substrate having a pixel region; sequentially forming a gate electrode of impurity-doped polycrystalline silicon, a gate insulating layer and an active layer of intrinsic polycrystalline silicon on the buffer layer in the pixel region; forming an interlayer insulating layer of an inorganic insulating material on the active layer; sequentially forming a source barrier pattern, a source ohmic contact layer and a source electrode on the interlayer insulating layer, sequentially forming a drain barrier pattern, a drain ohmic contact layer and a drain electrode on the interlayer insulating layer, and sequentially forming a first dummy pattern, a second dummy pattern and a data line on the interlayer insulating layer; forming a first passivation layer on a surface of the interlayer insulating layer including the source electrode, the drain electrode and the data line formed thereon; forming a gate line on the first passivation layer; forming a second passivation layer on a surface of the first passivation layer including the gate line formed thereon; and forming a pixel electrode on the second passivation layer.

摘要翻译： 一种制造用于显示装置的阵列基板的方法包括：在具有像素区域的基板上形成缓冲层; 在像素区域的缓冲层上依次形成杂质掺杂多晶硅的栅电极，栅极绝缘层和本征多晶硅的有源层; 在有源层上形成无机绝缘材料的层间绝缘层; 在层间绝缘层上顺序地形成源极阻挡图案，源极欧姆接触层和源电极，在层间绝缘层上依次形成漏极阻挡图案，漏极欧姆接触层和漏极，并依次形成第一虚拟 图案，第二虚设图案和数据线; 在包括形成在其上的源极电极，漏极电极和数据线的层间绝缘层的表面上形成第一钝化层; 在所述第一钝化层上形成栅极线; 在包括形成在其上的栅极线的第一钝化层的表面上形成第二钝化层; 以及在所述第二钝化层上形成像素电极。

公开(公告)号：US08198631B2

公开(公告)日：2012-06-12

申请号：US12813308

申请日：2010-06-10

申请人： Hee-Dong Choi ,  Hye-Young Choi ,  Jun-Min Lee

发明人： Hee-Dong Choi ,  Hye-Young Choi ,  Jun-Min Lee

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L27/1274 ,  H01L27/1288

摘要： Disclosed is a method of fabricating a display device that includes forming a buffer layer; forming a gate electrode of extrinsic polycrystalline silicon, a gate insulating layer, an active layer of intrinsic polycrystalline silicon and an auxiliary active layer of intrinsic amorphous silicon on the buffer layer; forming an ohmic contact layer of extrinsic amorphous silicon and contacting the auxiliary active layer, source and drain electrodes and a data line; patterning a first passivation layer, an insulating interlayer and the gate insulating layer to form a gate contact hole exposing the gate electrode; forming a gate line on the first passivation layer, made of a metal material, and contacting the gate electrode through the gate contact hole; forming a second passivation layer on the gate line; patterning the first and second passivation layers to form a drain contact hole exposing the drain electrode; and forming a pixel electrode on the second passivation layer in the pixel region and contacting the drain electrode through the drain contact hole.

摘要翻译： 公开了一种制造显示装置的方法，包括形成缓冲层; 在绝缘多晶硅上形成栅电极，栅极绝缘层，本征多晶硅的有源层和本征非晶硅的辅助有源层在缓冲层上; 形成外部非晶硅的欧姆接触层，并与辅助有源层，源极和漏极以及数据线接触; 图案化第一钝化层，绝缘中间层和栅极绝缘层，以形成暴露栅电极的栅极接触孔; 在所述第一钝化层上形成由金属材料制成的栅极线，并且通过所述栅极接触孔与所述栅电极接触; 在栅极线上形成第二钝化层; 图案化第一和第二钝化层以形成暴露漏电极的漏极接触孔; 以及在所述像素区域中的所述第二钝化层上形成像素电极，并且通过所述漏极接触孔与所述漏电极接触。

公开(公告)号：US20110018000A1

公开(公告)日：2011-01-27

申请号：US12813308

申请日：2010-06-10

申请人： Hee-Dong CHOI ,  Hye-Young Choi ,  Jun-Min Lee

发明人： Hee-Dong CHOI ,  Hye-Young Choi ,  Jun-Min Lee

IPC分类号： H01L33/16 ,  H01L21/336

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L27/1274 ,  H01L27/1288

摘要： Disclosed is a method of fabricating a display device that includes forming a buffer layer; forming a gate electrode of extrinsic polycrystalline silicon, a gate insulating layer, an active layer of intrinsic polycrystalline silicon and an auxiliary active layer of intrinsic amorphous silicon on the buffer layer; forming an ohmic contact layer of extrinsic amorphous silicon and contacting the auxiliary active layer, source and drain electrodes and a data line; patterning a first passivation layer, an insulating interlayer and the gate insulating layer to form a gate contact hole exposing the gate electrode; forming a gate line on the first passivation layer, made of a metal material, and contacting the gate electrode through the gate contact hole; forming a second passivation layer on the gate line; patterning the first and second passivation layers to form a drain contact hole exposing the drain electrode; and forming a pixel electrode on the second passivation layer in the pixel region and contacting the drain electrode through the drain contact hole.

摘要翻译： 公开了一种制造显示装置的方法，包括形成缓冲层; 在绝缘多晶硅上形成栅电极，栅极绝缘层，本征多晶硅的有源层和本征非晶硅的辅助有源层在缓冲层上; 形成外部非晶硅的欧姆接触层，并与辅助有源层，源极和漏极以及数据线接触; 图案化第一钝化层，绝缘中间层和栅极绝缘层，以形成暴露栅电极的栅极接触孔; 在所述第一钝化层上形成由金属材料制成的栅极线，并且通过所述栅极接触孔与所述栅电极接触; 在栅极线上形成第二钝化层; 图案化第一和第二钝化层以形成暴露漏电极的漏极接触孔; 以及在所述像素区域中的所述第二钝化层上形成像素电极，并且通过所述漏极接触孔与所述漏电极接触。

公开(公告)号：US08018143B2

公开(公告)日：2011-09-13

申请号：US12333129

申请日：2008-12-11

申请人： Byoung-June Lee ,  Jung-Han Park ,  Hyun-Taek Lim ,  Won-Hee Choi ,  Hye-Young Choi

发明人： Byoung-June Lee ,  Jung-Han Park ,  Hyun-Taek Lim ,  Won-Hee Choi ,  Hye-Young Choi

IPC分类号： H01L51/50

CPC分类号： H01L27/3253 ,  H01L51/5231 ,  H01L51/525 ,  H01L51/5259

摘要： A method of manufacturing an organic electroluminescent display device includes forming a first electrode on a first substrate including a plurality of pixel regions; forming a patterned spacer on the first electrode in the pixel region; forming an organic light emitting layer on the first electrode in the pixel region and on the patterned spacer; forming a second electrode on the organic light emitting layer; forming a calcium oxide layer on the second electrode; forming a moisture-absorbing layer on the calcium oxide layer; forming a driving thin film transistor on a second substrate; and forming a connection electrode connected to the driving thin film transistor, the connection electrode contacting the second electrode on the patterned spacer.

摘要翻译： 一种制造有机电致发光显示装置的方法包括：在包括多个像素区域的第一基板上形成第一电极; 在像素区域中的第一电极上形成图案化间隔物; 在像素区域和图案化间隔物上的第一电极上形成有机发光层; 在所述有机发光层上形成第二电极; 在所述第二电极上形成氧化钙层; 在氧化钙层上形成吸湿层; 在第二基板上形成驱动薄膜晶体管; 以及形成连接到所述驱动薄膜晶体管的连接电极，所述连接电极与所述图案化间隔物上的所述第二电极接触。

公开(公告)号：US07118937B2

公开(公告)日：2006-10-10

申请号：US10882933

申请日：2004-07-01

申请人： Jin Jang ,  Sung-Hwan Kim ,  Hye-Young Choi

发明人： Jin Jang ,  Sung-Hwan Kim ,  Hye-Young Choi

IPC分类号： H01I51/40

CPC分类号： H01L27/283 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0052 ,  H01L51/0516 ,  H01L51/0545 ,  H01L51/56

摘要： The present invention relates to a method of selectively depositing an organic semiconductor material and a method of manufacturing an organic semiconductor thin film transistor array. Since the thin film transistor array is formed by locally performing a plasma process on a substrate before depositing an organic semiconductor active layer on the substrate, the organic semiconductor material is deposited on only the organic semiconductor active layer having an island shape. Therefore, it is not necessary to use a shadow mask method or a photolithography method to manufacture an active matrix array. Accordingly, the present invention has advantages in that it is possible to obtain a high resolution thin film transistor array and to prevent characteristics of the thin film transistors in the array from being deteriorated.

摘要翻译： 本发明涉及有选择地沉积有机半导体材料的方法和制造有机半导体薄膜晶体管阵列的方法。 由于薄膜晶体管阵列是通过在衬底上淀积有机半导体有源层之前在衬底上局部地执行等离子体处理而形成的，所以有机半导体材料只沉积在具有岛状的有机半导体有源层上。 因此，不需要使用荫罩法或光刻法来制造有源矩阵阵列。 因此，本发明的优点在于可以获得高分辨率薄膜晶体管阵列，并且防止阵列中的薄膜晶体管的特性劣化。

公开(公告)号：US20100001633A1

公开(公告)日：2010-01-07

申请号：US12333129

申请日：2008-12-11

申请人： Byoung-June Lee ,  Jung-Han Park ,  Hyun-Taek Lim ,  Won-Hee Choi ,  Hye-Young Choi

发明人： Byoung-June Lee ,  Jung-Han Park ,  Hyun-Taek Lim ,  Won-Hee Choi ,  Hye-Young Choi

IPC分类号： H01J1/62 ,  H01J9/00

CPC分类号： H01L27/3253 ,  H01L51/5231 ,  H01L51/525 ,  H01L51/5259

摘要： A method of manufacturing an organic electroluminescent display device includes forming a first electrode on a first substrate including a plurality of pixel regions; forming a patterned spacer on the first electrode in the pixel region; forming an organic light emitting layer on the first electrode in the pixel region and on the patterned spacer; forming a second electrode on the organic light emitting layer; forming a calcium oxide layer on the second electrode; forming a moisture-absorbing layer on the calcium oxide layer; forming a driving thin film transistor on a second substrate; and forming a connection electrode connected to the driving thin film transistor, the connection electrode contacting the second electrode on the patterned spacer.

摘要翻译： 一种制造有机电致发光显示装置的方法包括：在包括多个像素区域的第一基板上形成第一电极; 在像素区域中的第一电极上形成图案化间隔物; 在像素区域和图案化间隔物上的第一电极上形成有机发光层; 在所述有机发光层上形成第二电极; 在所述第二电极上形成氧化钙层; 在氧化钙层上形成吸湿层; 在第二基板上形成驱动薄膜晶体管; 以及形成连接到所述驱动薄膜晶体管的连接电极，所述连接电极与所述图案化间隔物上的所述第二电极接触。

公开(公告)号：US20050176185A1

公开(公告)日：2005-08-11

申请号：US10882933

申请日：2004-07-01

申请人： Jin Jang ,  Sung-Hwan Kim ,  Hye-Young Choi

发明人： Jin Jang ,  Sung-Hwan Kim ,  Hye-Young Choi

IPC分类号： H01L29/786 ,  H01L21/00 ,  H01L21/336 ,  H01L27/28 ,  H01L51/30 ,  H01L51/40 ,  H01L51/56 ,  H01L21/84

CPC分类号： H01L27/283 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0052 ,  H01L51/0516 ,  H01L51/0545 ,  H01L51/56

摘要： The present invention relates to a method of selectively depositing an organic semiconductor material and a method of manufacturing an organic semiconductor thin film transistor array. Since the thin film transistor array is formed by locally performing a plasma process on a substrate before depositing an organic semiconductor active layer on the substrate, the organic semiconductor material is deposited on only the organic semiconductor active layer having an island shape. Therefore, it is not necessary to use a shadow mask method or a photolithography method to manufacture an active matrix array. Accordingly, the present invention has advantages in that it is possible to obtain a high resolution thin film transistor array and to prevent characteristics of the thin film transistors in the array from being deteriorated.

摘要翻译： 本发明涉及有选择地沉积有机半导体材料的方法和制造有机半导体薄膜晶体管阵列的方法。 由于薄膜晶体管阵列是通过在衬底上淀积有机半导体有源层之前在衬底上局部地执行等离子体处理而形成的，所以有机半导体材料只沉积在具有岛状的有机半导体有源层上。 因此，不需要使用荫罩法或光刻法来制造有源矩阵阵列。 因此，本发明的优点在于可以获得高分辨率薄膜晶体管阵列，并且防止阵列中的薄膜晶体管的特性劣化。