公开(公告)号：US10797106B2

公开(公告)日：2020-10-06

申请号：US16412015

申请日：2019-05-14

申请人： Hefei Reliance Memory Limited

发明人： Christophe J. Chevallier ,  Steve Kuo-Ren Hsia ,  Wayne Kinney ,  Steven Longcor ,  Darrell Rinerson ,  John Sanchez ,  Philip F. S. Swab ,  Edmond R. Ward

IPC分类号： H01L45/00 ,  H01L27/24 ,  G11C11/56 ,  G11C13/00 ,  G11C11/16

摘要： A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (ME) having tantalum. The ME including a first terminal, a second terminal, a first layer of a conductive metal oxide (CMO), and a second layer in direct contact with the first layer. The second layer and the first layer being operative to store at least one-bit of data as a plurality of resistive states, and the first and second layer are electrically in series with each other and with the first and second terminals.

公开(公告)号：US10833125B2

公开(公告)日：2020-11-10

申请号：US16412015

申请日：2019-05-14

申请人： Hefei Reliance Memory Limited

发明人： Christophe J. Chevallier ,  Steve Kuo-Ren Hsia ,  Wayne Kinney ,  Steven Longcor ,  Darrell Rinerson ,  John Sanchez ,  Philip F. S. Swab ,  Edmond R. Ward

IPC分类号： H01L45/00 ,  H01L27/24 ,  G11C11/56 ,  G11C13/00 ,  G11C11/16

摘要： A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (ME) having tantalum. The ME including a first terminal, a second terminal, a first layer of a conductive metal oxide (CMO), and a second layer in direct contact with the first layer. The second layer and the first layer being operative to store at least one-bit of data as a plurality of resistive states, and the first and second layer are electrically in series with each other and with the first and second terminals.

公开(公告)号：US11502249B2

公开(公告)日：2022-11-15

申请号：US17028909

申请日：2020-09-22

申请人： Hefei Reliance Memory Limited

发明人： Christophe J. Chevallier ,  Steve Kuo-Ren Hsia ,  Wayne Kinney ,  Steven Longcor ,  Darrell Rinerson ,  John Sanchez ,  Philip F. S. Swab ,  Edmond R. Ward

IPC分类号： H01L45/00 ,  H01L27/24 ,  G11C11/56 ,  G11C13/00 ,  G11C11/16

摘要： A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (ME) having tantalum. The ME including a first terminal, a second terminal, a first layer of a conductive metal oxide (CMO), and a second layer in direct contact with the first layer. The second layer and the first layer being operative to store at least one-bit of data as a plurality of resistive states, and the first and second layer are electrically in series with each other and with the first and second terminals.

公开(公告)号：US10340312B2

公开(公告)日：2019-07-02

申请号：US15797716

申请日：2017-10-30

申请人： Hefei Reliance Memory Limited

发明人： Christophe J. Chevallier ,  Steve Kuo-Ren Hsia ,  Wayne Kinney ,  Steven Longcor ,  Darrell Rinerson ,  John Sanchez ,  Philip F. S. Swab ,  Edmond R. Ward

IPC分类号： H01L45/00 ,  H01L27/24 ,  G11C11/16 ,  G11C11/56 ,  G11C13/00

摘要： A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (ME) having tantalum. The ME including a first terminal, a second terminal, a first layer of a conductive metal oxide (CMO), and a second layer in direct contact with the first layer. The second layer and the first layer being operative to store at least one-bit of data as a plurality of resistive states, and the first and second layer are electrically in series with each other and with the first and second terminals.