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公开(公告)号:US20080146029A1
公开(公告)日:2008-06-19
申请号:US12033943
申请日:2008-02-20
IPC分类号: H01L21/768
CPC分类号: H01L21/76802 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76811
摘要: A method of forming damascene interconnect structure in an organo-silicate glass layer without causing damage to the organo-silicate glass material. The method includes forming a stack of hardmask layers over the organo-silicate glass layer, defining openings in the hardmask and organo-silicate glass layers using a combination of plasma etch and plasma photoresist removal processes and performing one or more additional plasma etch processes that do not include oxygen containing species to etch the openings to depths required for forming the damascene interconnect structures and to remove any organo-silicate material damaged by the combination of plasma etch and plasma photoresist removal processes.
摘要翻译: 在有机硅酸盐玻璃层中形成镶嵌互连结构而不会损坏有机硅酸盐玻璃材料的方法。 该方法包括在有机硅酸盐玻璃层上形成硬掩模层堆叠,使用等离子体蚀刻和等离子体光致抗蚀剂去除方法的组合在硬掩模和有机硅酸盐玻璃层中限定开口,并执行一个或多个额外的等离子体蚀刻工艺 不包括含氧物质,以将开口蚀刻到形成镶嵌互连结构所需的深度,并除去由等离子体蚀刻和等离子体光致抗蚀剂去除工艺的组合损坏的任何有机硅酸盐材料。
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公开(公告)号:US07358182B2
公开(公告)日:2008-04-15
申请号:US11315923
申请日:2005-12-22
申请人: Heidi Lee Baks , Shyng-Tsong Chen , Timothy Joseph Dalton , Nicholas Colvin Masi Fuller , Kaushik Arun Kumar
发明人: Heidi Lee Baks , Shyng-Tsong Chen , Timothy Joseph Dalton , Nicholas Colvin Masi Fuller , Kaushik Arun Kumar
IPC分类号: H01L21/4763
CPC分类号: H01L21/76802 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76811
摘要: A method of forming damascene interconnect structure in an organo-silicate glass layer without causing damage to the organo-silicate glass material. The method includes forming a stack of hardmask layers over the organo-silicate glass layer, defining openings in the hardmask and organo-silicate glass layers using a combination of plasma etch and plasma photoresist removal processes and performing one or more additional plasma etch processes that do not include oxygen containing species to etch the openings to depths required for forming the damascene interconnect structures and to remove any organo-silicate material damaged by the combination of plasma etch and plasma photoresist removal processes.
摘要翻译: 在有机硅酸盐玻璃层中形成镶嵌互连结构而不会损坏有机硅酸盐玻璃材料的方法。 该方法包括在有机硅酸盐玻璃层上形成硬掩模层堆叠,使用等离子体蚀刻和等离子体光致抗蚀剂去除方法的组合在硬掩模和有机硅酸盐玻璃层中限定开口,并执行一个或多个额外的等离子体蚀刻工艺 不包括含氧物质,以将开口蚀刻到形成镶嵌互连结构所需的深度,并除去由等离子体蚀刻和等离子体光致抗蚀剂去除工艺的组合损坏的任何有机硅酸盐材料。
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