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公开(公告)号：US20120242970A1
公开(公告)日：2012-09-27
申请号：US13235902
申请日：2011-09-19
CPC分类号： G03F9/00 , G03F7/70483 , G03F7/70633
摘要： Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating or other structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The position of an image of the component structure varies between measurements, and a first type of correction is applied to reduce the influence on the measured intensities, caused by differences in the optical path to and from different positions. A plurality of structures may be imaged simultaneously within the field of view of the optical system, and each corrected for its respective position. The measurements may comprise first and second images of the same target under different modes of illumination and/or imaging, for example in a dark field metrology application. A second type of correction may be applied to reduce the influence of asymmetry between the first and second modes of illumination or imaging, for example to permit a more accurate overly measurement in a semiconductor device manufacturing process.
摘要翻译： 公开了用于测量由基板上的光刻工艺形成的目标结构的方法。 目标内的光栅或其他结构小于测量光学系统的照明点和视场。 组件结构的图像的位置在测量之间变化，并且应用第一类型的校正以减少由与来自不同位置的光路的差异引起的对测量的强度的影响。 可以在光学系统的视野内同时成像多个结构，并且每个结构被校正为其各自的位置。 测量可以包括在不同照明和/或成像模式下的相同目标的第一和第二图像，例如在暗场测量应用中。 可以应用第二类型的校正来减少第一和第二照明模式或成像之间的不对称性的影响，例如以允许在半导体器件制造过程中更准确地过度测量。
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2.发明申请Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method 有权计量方法和检验仪器，平版印刷系统和器件制造方法公开(公告)号：US20120123581A1
公开(公告)日：2012-05-17
申请号：US13294057
申请日：2011-11-10
申请人： Hendrik Jan Hidde SMILDE , Arno Jan BLEEKER , Patrick WARNAAR , Willem Marie Julia Marcel COENE , Michael KUBIS
发明人： Hendrik Jan Hidde SMILDE , Arno Jan BLEEKER , Patrick WARNAAR , Willem Marie Julia Marcel COENE , Michael KUBIS
CPC分类号： G03F7/70633 , G03F7/70483 , G03F7/70625 , G03F7/70641 , G06N99/005
摘要： Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus.
摘要翻译： 公开了用于测量由基板上的光刻工艺形成的目标结构的方法。 目标内的光栅结构小于测量光学系统的照明点和视场。 光学系统具有通向光瞳平面成像传感器的第一分支和通向基板平面成像传感器的第二分支。 空间光调制器被布置在光学系统的第二分支的中间光瞳平面中。 SLM赋予可编程的衰减模式，其可用于校正第一和第二照明模式或成像之间的不对称性。 通过使用特定的目标设计和机器学习过程，衰减模式也可以被编程为充当滤波器功能，增强对诸如焦点的特定参数的敏感性。
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3.发明申请Substrate for Use in Metrology, Metrology Method and Device Manufacturing Method 审中-公开用于计量，计量方法和设备制造方法的基板公开(公告)号：US20120044470A1
公开(公告)日：2012-02-23
申请号：US13190998
申请日：2011-07-26
CPC分类号： G03F7/70683 , G03F1/44 , G03F7/70633
摘要： A pattern from a patterning device is applied to a substrate. The applied pattern includes device functional areas and metrology target areas. Each metrology target area comprises a plurality of individual grating portions, which are used for diffraction based overlay measurements or other diffraction based measurements. The gratings are of the small target type, which is small than an illumination spot used in the metrology. Each grating has an aspect ratio substantially greater than 1, meaning that a length in a direction perpendicular to the grating lines which is substantially greater than a width of the grating. Total target area can be reduced without loss of performance in the diffraction based metrology. A composite target can comprise a plurality of individual grating portions of different overlay biases. Using integer aspect ratios such as 2:1 or 4:1, grating portions of different directions can be packed efficiently into rectangular composite target areas.
摘要翻译： 将来自图案形成装置的图案应用于基板。 应用模式包括设备功能区域和计量目标区域。 每个测量目标区域包括多个单独的光栅部分，其用于基于衍射的覆盖测量或其他基于衍射的测量。 光栅是小目标类型，小于计量中使用的照明点。 每个光栅具有基本上大于1的长宽比，这意味着在垂直于光栅线的方向上的长度大致大于光栅的宽度。 可以减少总目标面积，而不会在基于衍射的计量学中失去性能。 复合目标可以包括不同覆盖偏移的多个单独光栅部分。 使用诸如2：1或4：1的整数长宽比，可以将不同方向的光栅部分有效地包装到矩形复合目标区域中。
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4.发明申请Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method 失效检验方法和装置，平版印刷设备，平版印刷加工单元和器件制造方法公开(公告)号：US20110001978A1
公开(公告)日：2011-01-06
申请号：US12822422
申请日：2010-06-24
IPC分类号： G01N21/47
CPC分类号： G03F7/70633 , G03F7/705 , G03F7/70516
摘要： A method of determining an overlay error between two successive layers produced by a lithographic process on a substrate, including using the lithographic process to form a calibration structure including a periodic structure of the same pitch on each of the layers, such that an overlaid pair of periodic structures is formed, the structures being parallel, but offset relative to each other by an overlay amount. A spectrum produced by directing a beam of radiation onto the calibration structure is measured and compared with one or more modeled spectra so as to determine values of the grating parameters for the calibration structure from the measured spectrum. The lithographic process is used to form further overlaid periodic structures on the same or one or more subsequent substrates, the determined grating parameter values for the calibration structure being used to determine overlay amounts for the further overlaid periodic structures.
摘要翻译： 一种确定由光刻工艺在衬底上产生的两个连续层之间的重叠误差的方法，包括使用光刻工艺形成包括在每个层上的相同间距的周期性结构的校准结构，使得重叠的一对 形成周期性结构，结构是平行的，但是相对于彼此偏移了重叠量。 测量通过将辐射束引导到校准结构上产生的光谱，并将其与一个或多个建模光谱进行比较，以便根据测量的光谱确定校准结构的光栅参数的值。 光刻工艺用于在相同或一个或多个后续衬底上形成进一步覆盖的周期性结构，所确定的校准结构的光栅参数值用于确定进一步覆盖的周期性结构的重叠量。
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