公开(公告)号：US20060257369A1

公开(公告)日：2006-11-16

申请号：US11432943

申请日：2006-05-12

申请人： Paul Kessler ,  Henrik Rasmussen ,  Karen Chu

发明人： Paul Kessler ,  Henrik Rasmussen ,  Karen Chu

IPC分类号： A61K48/00 ,  A61N5/00

CPC分类号： C12N15/86 ,  A61K38/212 ,  A61K48/00 ,  A61K2121/00 ,  C07K14/525 ,  C12N2710/10343 ,  C12N2830/002 ,  C12N2830/008 ,  A61K2300/00

摘要： The invention provides a method for treating cancer in a human comprising (a) administering to the human a dose of a pharmaceutical composition comprising (i) a pharmaceutically acceptable carrier and (ii) an adenoviral vector comprising a nucleic acid sequence encoding a human TNF-α and operably linked to a promoter, wherein the dose comprises about 4×107 to about 4×1012 particle units (pu) of adenoviral vector, at least once in a therapeutic period comprising up to about 10 weeks, (b) administering a dose of ionizing radiation to the human over the duration of the therapeutic period, and (c) administering a dose of one or more chemotherapeutics to the human over the duration of the therapeutic period, whereby the cancer in the human is treated.

摘要翻译： 本发明提供了一种治疗人类癌症的方法，包括（a）向人施用一定剂量的药物组合物，其包含（i）药学上可接受的载体和（ii）腺病毒载体，其包含编码人TNF- α和可操作地连接到启动子，其中所述剂量包含约4×10 7个至约4×10 12个细胞单位（pu）的腺病毒载体，在治疗期至少一次包括 （b）在治疗期间内向人施用一定剂量的电离辐射，和（c）在治疗期间内向人施用一种或多种化学治疗剂的剂量，由此 治疗人类的癌症。

公开(公告)号：US20070166284A1

公开(公告)日：2007-07-19

申请号：US11695437

申请日：2007-04-02

申请人： Henrik Rasmussen ,  Karen Chu

发明人： Henrik Rasmussen ,  Karen Chu

IPC分类号： A61K48/00 ,  C12N15/861

CPC分类号： A61K35/761 ,  A61K38/191 ,  C12N2710/10332 ,  C12N2710/10341 ,  A61K2300/00

摘要： The invention provides a method for treating cancer in a human comprising administering to the human a dose of a pharmaceutical composition comprising (i) a pharmaceutically acceptable carrier and (ii) an adenoviral vector comprising a nucleic acid sequence encoding TNF-α operably linked to a promoter, wherein the dose comprises about 1×107 to about 4×1012 particle units (pu) of replication-deficient adenoviral vector, at least once in a therapeutic period comprising up to 10 weeks, whereby the cancer in human is treated. The invention further provides a method of treating a human for multiple tumors, wherein the method comprises contacting a first tumor with a dose of the pharmaceutical composition at least once in a therapeutic period comprising up to about 10 weeks, whereby the human is treated for the first tumor and one or more additional tumors.

摘要翻译： 本发明提供了一种治疗人类癌症的方法，包括向人施用剂量的药物组合物，其包含（i）药学上可接受的载体和（ii）腺病毒载体，其包含编码与α-α可操作地连接的TNF-α的核酸序列 启动子，其中所述剂量包含约1×10 7个至约4×10 12个复制缺陷型腺病毒载体的颗粒单位（pu），在治疗期至少一次包括至多10 周，其中治疗人类的癌症。 本发明进一步提供了治疗多种肿瘤的方法，其中所述方法包括使第一肿瘤与一定剂量的药物组合物在至多约10周的治疗期内至少接触一次，由此将该人治疗为 第一肿瘤和一个或多个另外的肿瘤。

公开(公告)号：US07199048B2

公开(公告)日：2007-04-03

申请号：US10897479

申请日：2004-07-23

申请人： Karen Chu ,  Anil Vijayendran ,  Michal Danek

发明人： Karen Chu ,  Anil Vijayendran ,  Michal Danek

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods and structures are provided for conformal lining of dual damascene structures in semiconductor devices that contain porous or low k dielectrics. Features, such as trenches and contact vias are formed in the dielectrics. The features are subjected to low-power plasma predeposition treatment to irregularities on the porous surfaces and/or reactively form an permeation barrier before a diffusion barrier material is deposited on the feature. The diffusion barrier may, for example, be deposited by CVD using metalorganic vapor reagents. The feature is then filled with copper metal and further processed to complete a dual damascene interconnect. The plasma predeposition treatment advantageously reduces the amount of permeation of the metalorganic reagent into the interlayer dielectric.

摘要翻译： 为包含多孔或低k电介质的半导体器件中的双镶嵌结构的保形衬里提供了方法和结构。 在电介质中形成诸如沟槽和接触通孔的特征。 这些特征经受低功率等离子体预沉积处理到多孔表面上的不规则性和/或在扩散阻挡材料沉积在特征上之前反应形成渗透屏障。 可以使用金属有机蒸汽试剂通过CVD沉积扩散阻挡层。 该特征然后用铜金属填充并进一步处理以完成双镶嵌互连。 等离子体预沉积处理有利地减少了金属有机试剂渗透到层间电介质中的量。

公开(公告)号：US20050148209A1

公开(公告)日：2005-07-07

申请号：US10897479

申请日：2004-07-23

申请人： Karen Chu ,  Anil Vijayendran ,  Michal Danek

发明人： Karen Chu ,  Anil Vijayendran ,  Michal Danek

IPC分类号： H01L21/26 ,  H01L21/285 ,  H01L21/768 ,  H01L29/00

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods and structures are provided for conformal lining of dual damascene structures in semiconductor devices that contain porous or low k dielectrics. Features, such as trenches and contact vias are formed in the dielectrics. The features are subjected to low-power plasma predeposition treatment to irregularities on the porous surfaces and/or reactively form an permeation barrier before a diffusion barrier material is deposited on the feature. The diffusion barrier may, for example, be deposited by CVD using metalorganic vapor reagents. The feature is then filled with copper metal and further processed to complete a dual damascene interconnect. The plasma predeposition treatment advantageously reduces the amount of permeation of the metalorganic reagent into the interlayer dielectric.

摘要翻译： 为包含多孔或低k电介质的半导体器件中的双镶嵌结构的保形衬里提供了方法和结构。 在电介质中形成诸如沟槽和接触通孔的特征。 这些特征经受低功率等离子体预沉积处理到多孔表面上的不规则性和/或在扩散阻挡材料沉积在特征上之前反应形成渗透屏障。 可以使用金属有机蒸汽试剂通过CVD沉积扩散阻挡层。 该特征然后用铜金属填充并进一步处理以完成双镶嵌互连。 等离子体预沉积处理有利地减少了金属有机试剂渗透到层间电介质中的量。

公开(公告)号：US06797642B1

公开(公告)日：2004-09-28

申请号：US10267305

申请日：2002-10-08

申请人： Karen Chu ,  Anil Vijayendran ,  Michal Danek

发明人： Karen Chu ,  Anil Vijayendran ,  Michal Danek

IPC分类号： H01L2131

CPC分类号： H01L21/76844 ,  C23C14/5826 ,  C23C16/56 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76862

摘要： The present invention provides a method to improve adhesion of barrier, metal, dielectric interfaces. In the process flow, a first barrier material is formed on a dielectric layer and bombarded with a plasma to effectively push the barrier material into the dielectric interface while leaving a portion of the barrier material over the dielectric. A second barrier material, which may or may not be the same as the first barrier material, is then formed on the remaining first barrier material. Advantageously, the method of the present invention allows the barrier material to be pushed into the dielectric to insure excellent adhesion, which prevents chemical mechanical polishing delamination. Furthermore, the presence of the first barrier material on the sidewalls of via apertures through the dielectric can prevent Cu poisoning from sputtered Cu or CxOy.

摘要翻译： 本发明提供了改善阻挡层，金属，电介质界面的附着力的方法。 在工艺流程中，第一阻挡材料形成在电介质层上并用等离子体轰击以有效地将阻挡材料推入电介质界面，同时将阻挡材料的一部分留在电介质上。 然后可以在剩余的第一阻挡材料上形成第二阻挡材料，其可以或可以不与第一阻挡材料相同。 有利地，本发明的方法允许阻挡材料被推入电介质以确保优异的粘附性，这防止了化学机械抛光分层。 此外，通过电介质的通孔的侧壁上的第一阻挡材料的存在可以防止溅射的Cu或C x O y的Cu中毒。