公开(公告)号：US06770975B2

公开(公告)日：2004-08-03

申请号：US09328646

申请日：1999-06-09

申请人： Shi-Qing Wang ,  Henry Chung ,  James Lin

发明人： Shi-Qing Wang ,  Henry Chung ,  James Lin

IPC分类号： H01L2348

CPC分类号： H01L21/76832 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76849 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention provides processes for the formation of structures in microelectronic devices such as integrated circuit devices. More particularly, the invention relates to the formation of vias, interconnect metallization and wiring lines using multiple low dielectric-constant inter-metal dielectrics. The processes use two or more dissimilar low-k dielectrics for the inter-metal dielectrics of Cu-based dual damascene backends of integrated circuits. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. Exceptional performance is achieved due to the lower parasitic capacitance resulting from the use of low-k dielectrics. An integrated circuit structure is formed having a substrate; an inorganic layer on the substrate which is composed of a pattern of metal lines on the substrate and an inorganic dielectric on the substrate between the metal lines; and an organic layer on the inorganic layer which is composed of an organic dielectric having metal filled vias therethrough which connect to the metal lines of the inorganic layer.

公开(公告)号：US06287955B1

公开(公告)日：2001-09-11

申请号：US09718787

申请日：2000-11-22

申请人： Shi-Qing Wang ,  Henry Chung ,  James Lin

发明人： Shi-Qing Wang ,  Henry Chung ,  James Lin

IPC分类号： H01L214763

CPC分类号： H01L21/76832 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76843 ,  H01L21/76849 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention provides processes for the formation of structures in microelectronic devices such as integrated circuit devices. More particularly, the invention relates to the formation of vias, interconnect metallization and wiring lines using multiple low dielectric-constant inter-metal dielectrics. The processes use two or more dissimilar low-k dielectrics for the inter-metal dielectrics of Cu-based dual damascene backends of integrated circuits. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. Exceptional performance is achieved due to the lower parasitic capacitance resulting from the use of low-k dielectrics. An integrated circuit structure is formed having a substrate; an inorganic layer on the substrate which is composed of a pattern of metal lines on the substrate and an inorganic dielectric on the substrate between the metal lines; and an organic layer on the inorganic layer which is composed of an organic dielectric having metal filled vias therethrough which connect to the metal lines of the inorganic layer.

摘要翻译： 本发明提供了在诸如集成电路器件的微电子器件中形成结构的方法。 更具体地，本发明涉及使用多个低介电常数金属间电介质形成通孔，互连金属化和布线。 该方法使用两个或多个不同的低k电介质用于集成电路的Cu基双镶嵌后端的金属间电介质。 由于两种电介质的等离子体蚀刻特性明显不同，因此使用有机和无机低k电介质都有优势。 一个电介质用作蚀刻其它电介质的蚀刻步骤，因此不需要额外的蚀刻阻挡层。 由于使用低k电介质导致较低的寄生电容，实现了卓越的性能。 形成具有基板的集成电路结构; 在基板上的无机层，由基板上的金属线图案和金属线之间的基板上的无机电介质构成; 以及无机层上的有机层，其由具有金属填充的通孔的有机电介质组成，其连接到无机层的金属线。

公开(公告)号：US06498399B2

公开(公告)日：2002-12-24

申请号：US09391721

申请日：1999-09-08

申请人： Henry Chung ,  James Lin

发明人： Henry Chung ,  James Lin

IPC分类号： H01L23485

CPC分类号： H01L21/76835 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76829

摘要： The invention provides microelectronic devices such as integrated circuit devices. Such have vias, interconnect metallization and wiring lines using dissimilar low dielectric constant intermetal dielectrics. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. A microelectronic device is formed having a substrate and a layer of a first dielectric material positioned on the substrate. A layer of a second dielectric material is positioned on the first dielectric layer and an additional layer of the first dielectric material positioned on the second dielectric material. At least one via extends through the first dielectric material layer and the second dielectric material layer, and at least one trench extends through the additional layer of the first dielectric material to the via. A lining of a barrier metal is formed on inside walls and a floor of the trench and on inside walls and a floor the via. A fill metal fills the trench and via in contact with the lining of the barrier metal.

摘要翻译： 本发明提供了诸如集成电路器件的微电子器件。 这样具有通孔，互连金属化和使用不同的低介电常数金属间电介质的布线。 由于两种电介质的等离子体蚀刻特性明显不同，因此使用有机和无机低k电介质都有优势。 一个电介质用作蚀刻其它电介质的蚀刻步骤，因此不需要额外的蚀刻阻挡层。 形成具有衬底和位于衬底上的第一介电材料层的微电子器件。 第二电介质材料层位于第一电介质层上，第一电介质材料的另一层位于第二电介质材料上。 至少一个通孔延伸穿过第一介电材料层和第二介电材料层，并且至少一个沟槽延伸穿过第一介电材料的附加层到通孔。 阻挡金属的衬里形成在内壁和沟槽的地板以及内壁和地板上的通孔上。 填充金属填充与阻挡金属的衬里接触的沟槽和通孔。

公开(公告)号：US06383912B1

公开(公告)日：2002-05-07

申请号：US09694194

申请日：2000-10-23

申请人： Henry Chung ,  James Lin

发明人： Henry Chung ,  James Lin

IPC分类号： H01L214763

CPC分类号： H01L21/76808 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76835 ,  H01L2221/1031

摘要： The invention provides process for producing microelectronic devices such as integrated circuit devices. Such have vias, interconnect metallization and wiring lines using dissimilar low dielectric constant intermetal dielectrics. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. A microelectronic device is formed having a substrate and a layer of a first dielectric material positioned on the substrate. A layer of a second dielectric material is positioned on the first dielectric layer. Either a sacrificial metal layer or and an additional layer the first dielectric material is positioned on the second dielectric material. At least one via extends through the first dielectric material layer and at least one trench extends through the additional layer of the first dielectric material and the second dielectric material layer to the via. A lining of a barrier metal is formed on inside walls and a floor of the trench and on inside walls and a floor the via. A fill metal fills the trench and via in contact with the lining of the barrier metal.

摘要翻译： 本发明提供了用于制造诸如集成电路器件的微电子器件的方法。 这样具有通孔，互连金属化和使用不同的低介电常数金属间电介质的布线。 由于两种电介质的等离子体蚀刻特性明显不同，因此使用有机和无机低k电介质都有优势。 一个电介质用作蚀刻其它电介质的蚀刻步骤，因此不需要额外的蚀刻阻挡层。 形成具有衬底和位于衬底上的第一介电材料层的微电子器件。 第二电介质材料层位于第一电介质层上。 牺牲金属层或附加层中的第一介电材料位于第二电介质材料上。 至少一个通孔延伸穿过第一介电材料层，并且至少一个沟槽延伸穿过第一介电材料的附加层和第二介电材料层延伸至通孔。 阻挡金属的衬里形成在内壁和沟槽的地板以及内壁和地板上的通孔上。 填充金属填充与阻挡金属的衬里接触的沟槽和通孔。

公开(公告)号：US08783288B2

公开(公告)日：2014-07-22

申请号：US12911795

申请日：2010-10-26

申请人： James Lin

发明人： James Lin

IPC分类号： F16K11/20 ,  F16K47/08 ,  B05B1/30

CPC分类号： B05B1/3026 ,  B05B1/18 ,  B05B1/3013 ,  Y10T137/86734 ,  Y10T137/87249

摘要： A sidespray for use with a water faucet unit includes a trigger valve and a volume control valve. The trigger valve is configured to define a full-ON water flow condition and a full-OFF water flow condition for the sidespray. A diverter actuator is coupled to the trigger valve to select between the full-ON water flow condition and the full-OFF water flow condition for the sidespray. The volume control valve is configured to define a volume-variable water passageway to limit a water flow volume through the sidespray when the trigger valve has set the sidespray to the full-ON water flow condition. A volume control actuator is coupled to the volume control valve to selectively adjust the water flow volume through the sidespray.

摘要翻译： 与水龙头单元一起使用的侧喷包括触发阀和容积控制阀。 触发阀被配置为为侧喷液体定义全开水流条件和全关水流量条件。 分流器致动器联接到触发阀以在全开水流条件和侧喷面的全关水流条件之间进行选择。 体积控制阀构造成限定一个体积可变的水通道，以在触发阀将侧面喷雾设定到全开水流状态时限制通过侧面喷雾的水流量。 音量控制致动器耦合到音量控制阀以选择性地调节通过侧面喷射的水流量。

公开(公告)号：US07994337B2

公开(公告)日：2011-08-09

申请号：US12333425

申请日：2008-12-12

申请人： Chunjian Liu ,  Katerina Leftheris ,  James Lin

发明人： Chunjian Liu ,  Katerina Leftheris ,  James Lin

IPC分类号： A61K31/428 ,  C07D417/04

CPC分类号： C07D513/04 ,  C07D417/04

摘要： A compound of Formula (I) an enantiomer, diastereomer or a pharmaceutically-acceptable salt thereof, wherein A is independently selected from: further wherein R1, R2, R3, R4, R5, R6, R7, and W are as described herein.

摘要翻译： 其中A独立地选自：其中R 1，R 2，R 3，R 4，R 5，R 6，R 7和W如本文所述。

公开(公告)号：US20090193339A1

公开(公告)日：2009-07-30

申请号：US12021783

申请日：2008-01-29

申请人： Jeffrey W. Nichols ,  Tessa A. Lau ,  Allen Cypher ,  James Lin ,  Eben M. Haber ,  Clemens Drews ,  Eric M. Wilcox ,  Barton A. Smith

发明人： Jeffrey W. Nichols ,  Tessa A. Lau ,  Allen Cypher ,  James Lin ,  Eben M. Haber ,  Clemens Drews ,  Eric M. Wilcox ,  Barton A. Smith

IPC分类号： G06F9/44 ,  G06F3/048

CPC分类号： G06F9/453

摘要： Embodiments herein provide a method that maintains computerized scripts. The scripts provide assistance to users with respect to using at least one computer software application that is operating on a computerized device. The method receives, from the user, at least one trigger. This process creates or “authors” the trigger. This “trigger” is an item that automatically initiates at least one of the scripts for the user. In addition, the method adds the trigger to the computer software application (not automatically, but instead based on user input). Thus, when initiated by the trigger, the script automatically outputs assistance (text, sounds, illustrations, educational videos, etc.) to the user through the computerized interface of the computerized device, so as to provide the needed assistance to the user.

摘要翻译： 本文的实施例提供了一种维护计算机化脚本的方法。 这些脚本向用户提供关于使用在计算机化设备上运行的至少一个计算机软件应用程序的帮助。 该方法从用户接收至少一个触发器。 此过程创建或“作者”触发器。 此“触发器”是自动启动用户至少一个脚本的项目。 此外，该方法将触发器添加到计算机软件应用程序（不是自动的，而是基于用户输入）。 因此，当由触发器发起时，脚本通过计算机化设备的计算机化界面自动地向用户输出辅助（文本，声音，插图，教育视频等），以便向用户提供所需的帮助。

公开(公告)号：US20090118272A1

公开(公告)日：2009-05-07

申请号：US12333425

申请日：2008-12-12

申请人： Chunjian Liu ,  Katerina Leftheris ,  James Lin

发明人： Chunjian Liu ,  Katerina Leftheris ,  James Lin

IPC分类号： A61K31/428 ,  C07D417/14 ,  C07D417/10 ,  A61K31/5377 ,  A61K31/4439 ,  A61P29/00 ,  A61K31/454 ,  A61K31/437 ,  C07D513/04

CPC分类号： C07D513/04 ,  C07D417/04

摘要： A compound of Formula (I) an enantiomer, diastereomer or a pharmaceutically-acceptable salt thereof, wherein A is independently selected from: further wherein R1, R2, R3, R4, R5, R6, R7, and W are as described herein.Also disclosed is a compound of Formula (II) an enantiomer, diastereomer, or a pharmaceutically-acceptable salt thereof, wherein each of G, X and Y are independently CH or N, wherein at each occurrence at least one of G, X or Y is N and the other two of G, X or Y are CH; and B is independently selected from: further wherein R1, R2, R3, R4, R5, R8, R9 and Z are as described herein.Also disclosed are pharmaceutical compositions containing compounds of Formula (I) and Formula (II), and methods of treating conditions associated with the activity of p38 kinase.

摘要翻译： 式（I）化合物，其对映异构体，非对映体或其药学上可接受的盐，其中A独立地选自：其中R 1，R 2，R 3，R 4，R 5，R 6，R 7和W如本文所述。 还公开了式（II）的化合物，其对映异构体，非对映异构体或其药学上可接受的盐，其中G，X和Y各自独立地为CH或N，其中在每次出现时，G，X或Y中的至少一个 是N，另外两个G，X或Y是CH; 并且B独立地选自：其中R 1，R 2，R 3，R 4，R 5，R 8，R 9和Z如本文所述。 还公开了含有式（I）和式（II）化合物的药物组合物，以及治疗与p38激酶活性相关的病症的方法。

公开(公告)号：US07473784B2

公开(公告)日：2009-01-06

申请号：US11494234

申请日：2006-07-27

申请人： Chunjian Liu ,  Katerina Leftheris ,  James Lin

发明人： Chunjian Liu ,  Katerina Leftheris ,  James Lin

IPC分类号： A61K31/428 ,  C07D417/04

CPC分类号： C07D513/04 ,  C07D417/04

摘要： A compound of Formula (I) an enantiomer, diastereomer or a pharmaceutically-acceptable salt thereof, wherein A is as described herein. Also disclosed is a compound of Formula (II) an enantiomer, diastereomer, or a pharmaceutically-acceptable salt thereof, wherein each of G, X and Y are independently CH or N, wherein at each occurrence at least one of G, X or Y is N and the other two of G, X or Y are CH; and B, R1, R2, R3, R4, R5, R8, R9 and Z are as described herein. Also disclosed are pharmaceutical compositions containing compounds of Formula (I) and Formula (II), and methods of treating conditions associated with the activity of p38 kinase.

摘要翻译： 式（I）的化合物，其对映体，非对映异构体或其药学上可接受的盐，其中A如本文所述。 还公开了式（II）的化合物，其对映异构体，非对映异构体或其药学上可接受的盐，其中G，X和Y各自独立地为CH或N，其中在每次出现时，G，X或Y中的至少一个 是N，另外两个G，X或Y是CH; 并且B，R 1，R 2，R 3，R 4，R 5，R 8，R 9和Z如本文所述。 还公开了含有式（I）和式（II）化合物的药物组合物，以及治疗与p38激酶活性相关的病症的方法。

公开(公告)号：US20080270445A1

公开(公告)日：2008-10-30

申请号：US11739338

申请日：2007-04-24

申请人： Allen George Cypher ,  Eben Merriam Haber ,  Eser Kandogan ,  Tessa Ann Lau ,  James Lin ,  Danny Greg Little

发明人： Allen George Cypher ,  Eben Merriam Haber ,  Eser Kandogan ,  Tessa Ann Lau ,  James Lin ,  Danny Greg Little

IPC分类号： G06F7/00

CPC分类号： G06F8/34 ,  G06F9/45512

摘要： A method for automating variables in an end-user programming system is disclosed. The end-user programming system comprises a script, a shared repository, at least one database, a recorder, an interpreter, and an execution engine. The script comprises at least one command describing an event comprising a data value. Each user has a uniquely identified entry set for the entries distributed in at least one database. The interpreter automatically creates a variable for a data value in a command by comparing the data value with each entry value in the entry set for the user recording the command. The interpreter automatically instantiates a variable in a command with an entry value by comparing the variable with each entry name in the entry set for the user executing the command.