公开(公告)号：US20060278899A1

公开(公告)日：2006-12-14

申请号：US11445651

申请日：2006-06-02

申请人： Heon Chang ,  Suk Hong ,  Hae Park

发明人： Heon Chang ,  Suk Hong ,  Hae Park

IPC分类号： H01L29/768

CPC分类号： H01L45/144 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1675

摘要： A phase change RAM device includes a semiconductor substrate having a phase change cell area and a voltage application area; a first oxide layer, a nitride layer and a second oxide layer sequentially formed on the semiconductor substrate; a first plug formed in the first oxide layer, the nitride layer and the second oxide layer of the phase change cell area; a second plug formed in the first oxide layer and the nitride layer of the voltage application area; a conductive line formed in the second oxide layer; a third oxide layer formed on the second oxide layer; a lower electrode shaped like a plug, the lower electrode being formed so as to directly make contact with the first plug; and a phase change layer and an upper electrode sequentially formed on the lower electrode in a pattern form.

公开(公告)号：US20060278863A1

公开(公告)日：2006-12-14

申请号：US11445650

申请日：2006-06-02

申请人： Heon Chang ,  Suk Hong ,  Hae Park

发明人： Heon Chang ,  Suk Hong ,  Hae Park

IPC分类号： H01L29/04

CPC分类号： H01L21/743 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

摘要： Disclosed are a phase change RAM device and a method for fabricating a phase change RAM device, which can efficiently lower intensity of current required for changing a phase of a phase change layer. The method includes the steps of providing a semiconductor substrate formed with an insulating interlayer including a tungsten plug, forming a first oxide layer on the semiconductor substrate, forming a pad-type bottom electrode, which makes contact with the tungsten plug, in the first oxide layer, forming a second oxide layer on the first oxide layer including the bottom electrode, and forming a porous polystyrene pattern on the second oxide layer such that a predetermined portion of the second oxide layer corresponding to a center portion of the bottom electrode is covered with the porous polystyrene pattern.

摘要翻译： 公开了一种相变RAM装置和制造相变RAM装置的方法，其可以有效地降低改变相变层的相位所需的电流强度。 该方法包括以下步骤：提供形成有包含钨插塞的绝缘中间层的半导体衬底，在半导体衬底上形成第一氧化物层，在第一氧化物中形成与钨插头接触的焊盘型底电极 层，在包括底电极的第一氧化物层上形成第二氧化物层，并且在第二氧化物层上形成多孔聚苯乙烯图案，使得与底电极的中心部分相对应的第二氧化物层的预定部分被覆盖 多孔聚苯乙烯图案。

公开(公告)号：US20060266991A1

公开(公告)日：2006-11-30

申请号：US11247318

申请日：2005-10-11

申请人： Heon Chang ,  Suk Hong ,  Hae Park

发明人： Heon Chang ,  Suk Hong ,  Hae Park

IPC分类号： H01L47/00

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

摘要： Disclosed is a phase change memory device having a uniformly decreased writing current necessary for phase change of a phase change layer and a method for manufacturing the same. The phase change memory device includes a semiconductor substrate having a lower pattern; a first oxide layer formed on the semiconductor substrate to cover the lower pattern; a bottom electrode contact formed as a plug shape within the first oxide layer; a nano-size insulation layer formed on the first oxide layer including the bottom electrode contact; a phase change layer formed on the nano-size insulation layer; a top electrode formed on the phase change layer; a second oxide layer formed on the overall surface of the resulting substrate to cover a phase change cell having the bottom electrode contact, the nano-size insulation layer, the phase change layer, and the top electrode laminated successively; and a metal wiring formed within the second oxide layer to contact the top electrode. The nano-size insulation layer is made of any one chosen from a group including silicon oxide (SiO2), aluminum oxide (Al2O3), hafnium oxide (HfO2), and zirconium oxide (ZrO2) or from a group including silicon nitride (SiN) and aluminum nitride (AlN).

摘要翻译： 公开了相变层的相位变化所需的写入电流均匀降低的相变存储器件及其制造方法。 相变存储器件包括具有较低图案的半导体衬底; 形成在所述半导体衬底上以覆盖所述下部图案的第一氧化物层; 在第一氧化物层内形成为塞子形状的底部电极接触; 形成在包括所述底部电极接触部的所述第一氧化物层上的纳米尺寸绝缘层; 形成在纳米尺寸绝缘层上的相变层; 形成在所述相变层上的顶部电极; 形成在所得基板的整个表面上的第二氧化物层，以覆盖具有底部电极接触的相变单元，纳米尺寸绝缘层，相变层和顶部电极; 以及形成在所述第二氧化物层内以接触所述顶部电极的金属布线。 纳米尺寸绝缘层由选自氧化硅（SiO 2），氧化铝（Al 2 O 3 O 3），氧化铝 >），氧化铪（HfO 2 O 2）和氧化锆（ZrO 2/2），或者包括氮化硅（SiN）和氮化铝（AlN）的组中。

公开(公告)号：US20060284159A1

公开(公告)日：2006-12-21

申请号：US11445523

申请日：2006-06-02

申请人： Heon Chang ,  Suk Hong ,  Hae Park

发明人： Heon Chang ,  Suk Hong ,  Hae Park

IPC分类号： H01L29/04

CPC分类号： H01L45/1675 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1616

摘要： A phase change memory device reduces the current necessary to cause a phase change of a phase change layer. The phase change memory device includes a first oxide layer formed on a semiconductor substrate; a lower electrode formed inside the first oxide layer; a second oxide layer formed on the first oxide layer including the lower electrode, the second oxide having a hole for exposing a part of the lower electrode; a phase change layer formed on a surface of the hole with a uniform thickness so as to make contact with the lower electrode; and an upper electrode formed in the hole and on a part of the second oxide layer, the part being adjacent to the hole.

摘要翻译： 相变存储器件减少引起相变层相变所需的电流。 相变存储器件包括形成在半导体衬底上的第一氧化物层; 形成在所述第一氧化物层内的下电极; 形成在包括所述下电极的所述第一氧化物层上的第二氧化物层，所述第二氧化物具有用于暴露所述下电极的一部分的孔; 在所述孔的表面上形成均匀厚度的相变层，以与所述下电极接触; 以及形成在所述孔中和所述第二氧化物层的一部分上的上电极，所述部分与所述孔相邻。

公开(公告)号：US20070075304A1

公开(公告)日：2007-04-05

申请号：US11440236

申请日：2006-05-24

申请人： Heon Chang ,  Suk Kyoung Hong ,  Hae Park

发明人： Heon Chang ,  Suk Kyoung Hong ,  Hae Park

IPC分类号： H01L29/04

CPC分类号： H01L45/1666 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144

摘要： A phase-change memory device more precisely controls electrical current required to accomplish a phase change by using contact holes that extend between phase change layers that are sized differently from each other.

摘要翻译： 相变存储器件通过使用在相互不同的尺寸的相变层之间延伸的接触孔来更精确地控制完成相变所需的电流。

公开(公告)号：US20060003263A1

公开(公告)日：2006-01-05

申请号：US10999519

申请日：2004-11-30

申请人： Heon Chang

发明人： Heon Chang

IPC分类号： G03C5/00

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/144 ,  H01L45/1683

摘要： Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: a bottom electrode formed on a contact plug; a phase-change layer formed on the bottom electrode and having a shape of a character ‘π’; and a top electrode formed on the phase-change layer.

公开(公告)号：US20060003515A1

公开(公告)日：2006-01-05

申请号：US10999357

申请日：2004-11-30

申请人： Heon Chang

发明人： Heon Chang

IPC分类号： H01L21/8238 ,  H01L21/336 ,  H01L21/20

CPC分类号： H01L45/06 ,  H01L45/1226 ,  H01L45/144 ,  H01L45/1675

摘要： Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: bottom electrodes and top electrodes formed on a dielectric interlayer, each of the bottom electrodes and the top electrodes having both side surfaces in contact with a first oxide layer, a phase-change layer, a nitride layer, and a second oxide layer; the phase-change layer formed between the first oxide layer and the nitride layer while being in contact with the side surfaces of the bottom electrodes and the top electrodes; a third oxide layer formed on the bottom electrodes and the top electrode; and a metal wire in contact with the top electrode.

公开(公告)号：US20060003470A1

公开(公告)日：2006-01-05

申请号：US10999545

申请日：2004-11-30

申请人： Heon Chang

发明人： Heon Chang

IPC分类号： H01L21/00

CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/1666

摘要： Disclosed are a phase-change random access memory device and a method for manufacturing the same, capable of improving a driving speed of the phase-change random access memory by reducing a contact surface between a bottom electrode and a phase-change layer. The phase-change random access memory device includes a first insulation layer formed on a semiconductor substrate and having a first contact hole for exposing a predetermined portion of the semiconductor substrate, a bottom electrode contact for filling the first contact hole, a first bottom electrode formed on the first insulation layer, a second bottom electrode spaced from the first bottom electrode by a predetermined distance, a second insulation layer formed on the first insulation layer, a phase-change layer pattern for filling the second contact hole, and a top electrode formed on the phase-change layer pattern.

摘要翻译： 公开了一种相变随机存取存储器件及其制造方法，其能够通过减小底部电极和相变层之间的接触表面来改善相变随机存取存储器的驱动速度。 相变随机存取存储器件包括形成在半导体衬底上并具有用于暴露半导体衬底的预定部分的第一接触孔的第一绝缘层，用于填充第一接触孔的底部电极接触，形成的第一底部电极 在第一绝缘层上，与第一底部电极隔开预定距离的第二底部电极，形成在第一绝缘层上的第二绝缘层，用于填充第二接触孔的相变层图案和形成的顶部电极 在相变层图案上。

公开(公告)号：US20060001164A1

公开(公告)日：2006-01-05

申请号：US11000179

申请日：2004-11-30

申请人： Heon Chang

发明人： Heon Chang

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/144 ,  H01L45/1666

摘要： Disclosed are a phase-change random access memory device and a method for manufacturing the same. The phase-change random access memory includes a first insulation layer having first contact holes, conductive plugs for filling the first contact holes, a second insulation layer having a second contact hole, and a bit line. Third and fourth insulation layers and a nitride layer are sequentially formed on the second insulation layer and have third contact holes. Bottom electrodes are provided to fill the third contact holes. An opening is formed in order to expose a part of the third insulation layer and a cavity is connected with the opening so as to expose a part of the bottom electrode. A phase-change layer pattern is connected to one side of the bottom electrode. A top electrode is formed on the phase-change layer pattern.

摘要翻译： 公开了一种相变随机存取存储器件及其制造方法。 相变随机存取存储器包括具有第一接触孔的第一绝缘层，用于填充第一接触孔的导电插塞，具有第二接触孔的第二绝缘层和位线。 第三和第四绝缘层和氮化物层依次形成在第二绝缘层上并具有第三接触孔。 提供底部电极以填充第三接触孔。 形成开口以暴露第三绝缘层的一部分，并且空腔与开口连接以暴露底部电极的一部分。 相变层图案连接到底部电极的一侧。 在相变层图案上形成顶部电极。

公开(公告)号：US20060001017A1

公开(公告)日：2006-01-05

申请号：US10999330

申请日：2004-11-30

申请人： Heon Chang

发明人： Heon Chang

IPC分类号： H01L29/04

CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675

摘要： Disclosed are a phase-change random access memory device and a method for manufacturing the same by performing a photolithography process using electronic beam. The phase-change random access memory device includes a first insulation layer having first contact holes and a second contact hole, conductive plugs for filling the first contact holes, a bit line for filling the second contact hole, and a second insulation layer. A third insulation layer is formed on the second insulation layer. Third contact holes are formed in the third and second insulation layers. Fourth contact holes are formed between the hard mask layer and the third insulation layer. First and second bottom electrode contacts are provided to fill the third and fourth contact holes. Bottom electrodes are formed on the third insulation layer.

摘要翻译： 公开了一种使用电子束执行光刻处理的相变随机存取存储器件及其制造方法。 相变随机存取存储器件包括具有第一接触孔和第二接触孔的第一绝缘层，用于填充第一接触孔的导电插塞，用于填充第二接触孔的位线和第二绝缘层。 在第二绝缘层上形成第三绝缘层。 第三接触孔形成在第三绝缘层和第二绝缘层中。 在硬掩模层和第三绝缘层之间形成第四接触孔。 提供第一和第二底部电极触点以填充第三和第四接触孔。 底部电极形成在第三绝缘层上。