公开(公告)号：US08421134B2

公开(公告)日：2013-04-16

申请号：US12976851

申请日：2010-12-22

申请人： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

发明人： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

IPC分类号： H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14634

摘要： A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

摘要翻译： 减小芯片尺寸的背面照明图像传感器具有设置在后侧照明图像传感器中的像素区域的垂直上部的电容器，其中光从用户的背面被照射，从而减小了芯片尺寸，并且 背面照明图像传感器的制造方法。 减少芯片尺寸的背面照明图像传感器的电容器形成在像素区域的垂直上部，而不是在像素区域的外侧，使得不需要用于形成电容器的像素区域的外部区域 ，从而减小芯片尺寸。

公开(公告)号：US08420429B2

公开(公告)日：2013-04-16

申请号：US13563655

申请日：2012-07-31

申请人： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

发明人： In Gyun Jeon ,  Se Jung Oh ,  Heui Gyun Ahn ,  Jun Ho Won

IPC分类号： H01L21/00

CPC分类号： H01L27/1464 ,  H01L27/14634

摘要： A back side illumination image sensor reduced in chip size has a capacitor disposed in a vertical upper portion of a pixel region in the back side illumination image sensor in which light is illuminated from a back side of a subscriber, thereby reducing a chip size, and a method for manufacturing the back side illumination image sensor. The capacitor of the back side illumination image sensor reduced in chip size is formed in the vertical upper portion of the pixel region, not in the outside of a pixel region, so that the outside area of the pixel region for forming the capacitor is not required, thereby reducing a chip size.

公开(公告)号：US08399282B2

公开(公告)日：2013-03-19

申请号：US13026963

申请日：2011-02-14

申请人： Heui Gyun Ahn ,  Se Jung Oh ,  In Gyun Jeon ,  Jun Ho Won

发明人： Heui Gyun Ahn ,  Se Jung Oh ,  In Gyun Jeon ,  Jun Ho Won

IPC分类号： H01L21/00

CPC分类号： H01L24/03 ,  H01L21/6835 ,  H01L23/481 ,  H01L24/05 ,  H01L27/1462 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2221/68372 ,  H01L2224/05093 ,  H01L2924/01046 ,  H01L2924/01078

摘要： A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, forming vias that pass through the anti-reflective layer and the back side dielectric layer and contact back sides of super contacts which are formed on the Si substrate, and forming a pad on the back side dielectric layer such that the pad is electrically connected to the vias.

摘要翻译： 公开了一种用于在具有三维堆叠结构的晶片中形成焊盘的方法。 该方法包括将包括Si衬底和处理晶片的器件晶片接合，使Si衬底的背面变薄，在Si衬底的减薄的背侧上沉积抗反射层，在其上沉积背面电介质层 抗反射层，形成穿过抗反射层和背面电介质层的通孔，并接触形成在Si衬底上的超级触点的背面，并在背面电介质层上形成焊盘，使得焊盘 电连接到通孔。

公开(公告)号：US07898011B2

公开(公告)日：2011-03-01

申请号：US12160366

申请日：2006-12-07

申请人： Jun Ho Won ,  Se Jung Oh ,  Jae Young Rim ,  Byoung Su Lee

发明人： Jun Ho Won ,  Se Jung Oh ,  Jae Young Rim ,  Byoung Su Lee

IPC分类号： H01L31/062

CPC分类号： H01L27/14685 ,  H01L27/14623 ,  H01L27/1463

摘要： An image sensor for reducing crosstalk includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

摘要翻译： 用于减少串扰的图像传感器包括形成在最下层金属布线层的多个金属布线和半导体基板之间以及一个金属布线层和另一个金属布线层之间的防反射膜。 根据本发明的具有防反射膜的图像传感器可以通过使用形成在光电二极管周围的防反射膜与现有的图像传感器相比来减少颜色串扰和噪声。

公开(公告)号：US20090008737A1

公开(公告)日：2009-01-08

申请号：US12160366

申请日：2006-12-07

申请人： Jun Ho Won ,  Se Jung Oh ,  Jae Young Rim ,  Byoung Su Lee

发明人： Jun Ho Won ,  Se Jung Oh ,  Jae Young Rim ,  Byoung Su Lee

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L27/14685 ,  H01L27/14623 ,  H01L27/1463

摘要： Provided is an image sensor and a method of manufacturing the same. The image sensor includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer.The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

摘要翻译： 提供了一种图像传感器及其制造方法。 图像传感器包括形成在最下层金属布线层的多根金属布线和半导体基板之间以及一个金属布线层和另一个金属布线层之间的防反射膜。 根据本发明的具有防反射膜的图像传感器可以通过使用形成在光电二极管周围的防反射膜与现有的图像传感器相比来减少颜色串扰和噪声。