Error correction code in memory
    5.
    发明授权

    公开(公告)号:US10312943B2

    公开(公告)日:2019-06-04

    申请号:US15468619

    申请日:2017-03-24

    Abstract: In one example in accordance with the present disclosure, a system comprises a plurality of memory dies, a first region of memory allocated for primary ECC spread across a first subset of at least one memory die belonging to the plurality of memory die, wherein a portion of the primary ECC is allocated to each data block and a second region of memory allocated for secondary ECC spread across a second subset of at least one memory die included in the plurality of memory die. The system also comprises a memory controller configured to determine that an error within the first data block cannot be corrected using a first portion of the primary ECC allocated to the first data block, access the second region allocated for secondary ECC stored on the at least one memory die belonging to the plurality of memory die and attempt to correct the error using the primary and secondary ECC.

    SAVING POSITION OF A WEAR LEVEL ROTATION
    6.
    发明申请

    公开(公告)号:US20180046576A1

    公开(公告)日:2018-02-15

    申请号:US15234982

    申请日:2016-08-11

    Abstract: In one example in accordance with the present disclosure, a system may include a wear level handler to start a current rotation of a wear level algorithm through a plurality of cache line addresses in a region of memory and a location storer to store a rotation count of the rotation. The system may also include a data mover to move a cache line from the selected cache line address to a gap cache line address corresponding to the additional cache line address and a metadata setter to set a metadata of the gap cache line address to a value corresponding to the current rotation. The system may also include a current position determiner to determine, based on the value of at least one metadata and the rotation count, a current position of the current rotation after a power loss event.

    Non-idempotent primitives in fault-tolerant memory

    公开(公告)号:US10409681B2

    公开(公告)日:2019-09-10

    申请号:US15500067

    申请日:2015-01-30

    Abstract: According to an example, a retransmission sequence involving non-idempotent primitives in a fault-tolerant memory fabric may be modified. For example, a redundancy controller may request a sequence to access a stripe in the fault-tolerant memory fabric, wherein the sequence involves a non-idempotent primitive. In response to determining an expiration of a time threshold for the non-idempotent primitive, the redundancy controller may read other data in other cachelines in the stripe, calculate a new parity value by performing an idempotent exclusive-or primitive on the new data with the other data in the stripe, and write the new parity to the stripe using an idempotent write primitive.

    ERROR CORRECTION CODE IN MEMORY
    10.
    发明申请

    公开(公告)号:US20180276068A1

    公开(公告)日:2018-09-27

    申请号:US15468619

    申请日:2017-03-24

    Abstract: In one example in accordance with the present disclosure, a system comprises a plurality of memory dies, a first region of memory allocated for primary ECC spread across a first subset of at least one memory die belonging to the plurality of memory die, wherein a portion of the primary ECC is allocated to each data block and a second region of memory allocated for secondary ECC spread across a second subset of at least one memory die included in the plurality of memory die. The system also comprises a memory controller configured to determine that an error within the first data block cannot be corrected using a first portion of the primary ECC allocated to the first data block, access the second region allocated for secondary ECC stored on the at least one memory die belonging to the plurality of memory die and attempt to correct the error using the primary and secondary ECC.

Patent Agency Ranking