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公开(公告)号：US07968357B2
公开(公告)日：2011-06-28
申请号：US12662961
申请日：2010-05-13
IPC分类号： H01L21/00
CPC分类号： G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
摘要： The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
摘要翻译： 本发明提供一种在像素内部具有大的保持电容的液晶显示装置。 液晶显示装置包括第一基板，以相对的方式与第一基板相对地布置的第二基板和夹在第一基板和第二基板之间的液晶。 第一基板包括视频信号线，像素电极，具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极，形成在第二电极上方的第一氮化硅膜， 形成在第一氮化硅膜上方的有机绝缘膜，形成在有机绝缘膜上方的电容电极和形成在电容电极上方和像素电极下方的第二氮化硅膜。 第二氮化硅膜是在低于第一氮化硅膜的形成温度的温度下形成的膜。 第一氮化硅膜和第二氮化硅膜通过干法蚀刻同时蚀刻第一氮化硅膜和第二氮化硅膜两者而形成接触孔。 第二电极和像素电极经由接触孔相互连接。 将施加到像素电极的电位不同的电位施加到电容电极，并且由像素电极，第二氮化硅膜和电容电极形成保持电容。
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公开(公告)号：US08377765B2
公开(公告)日：2013-02-19
申请号：US13067281
申请日：2011-05-20
IPC分类号： H01L21/00
CPC分类号： G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
摘要： The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
摘要翻译： 本发明提供一种在像素内部具有大的保持电容的液晶显示装置。 液晶显示装置包括第一基板，以相对的方式与第一基板相对地布置的第二基板和夹在第一基板和第二基板之间的液晶。 第一基板包括视频信号线，像素电极，具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极，形成在第二电极上方的第一氮化硅膜， 形成在第一氮化硅膜上方的有机绝缘膜，形成在有机绝缘膜上方的电容电极和形成在电容电极上方和像素电极下方的第二氮化硅膜。 第二氮化硅膜是在低于第一氮化硅膜的形成温度的温度下形成的膜。 第一氮化硅膜和第二氮化硅膜通过干法蚀刻同时蚀刻第一氮化硅膜和第二氮化硅膜两者而形成接触孔。 第二电极和像素电极经由接触孔相互连接。 将施加到像素电极的电位不同的电位施加到电容电极，并且由像素电极，第二氮化硅膜和电容电极形成保持电容。
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公开(公告)号：US20120299028A1
公开(公告)日：2012-11-29
申请号：US13568672
申请日：2012-08-07
IPC分类号： H01L33/62
CPC分类号： G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
摘要： A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
摘要翻译： 具有大像素保持电容的LCD装置包括相对的第一和第二基板以及它们之间的液晶。 第一基板包括视频信号线，像素电极，具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极，形成在第二电极上方的第一氮化硅膜，有机物 第一氮化硅膜上方的绝缘膜，有机绝缘膜上方的电容电极，以及电容电极上方和像素电极下方的第二氮化硅膜。 在第一和第二氮化硅膜中蚀刻的接触孔将第二电极和像素电极彼此连接。 保持电容由像素电极，第二氮化硅膜和电容电极形成。
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公开(公告)号：US20110227083A1
公开(公告)日：2011-09-22
申请号：US13067281
申请日：2011-05-20
IPC分类号： H01L33/16
CPC分类号： G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
摘要： The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
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公开(公告)号：US08513701B2
公开(公告)日：2013-08-20
申请号：US13568672
申请日：2012-08-07
IPC分类号： H01L33/00
CPC分类号： G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
摘要： A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
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公开(公告)号：US20070298538A1
公开(公告)日：2007-12-27
申请号：US11802385
申请日：2007-05-22
IPC分类号： H01L21/00
CPC分类号： G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
摘要： The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
摘要翻译： 本发明提供一种在像素内部具有大的保持电容的液晶显示装置。 液晶显示装置包括第一基板，以相对的方式与第一基板相对地布置的第二基板和夹在第一基板和第二基板之间的液晶。 第一基板包括视频信号线，像素电极，具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极，形成在第二电极上方的第一氮化硅膜， 形成在第一氮化硅膜上方的有机绝缘膜，形成在有机绝缘膜上方的电容电极和形成在电容电极上方和像素电极下方的第二氮化硅膜。 第二氮化硅膜是在低于第一氮化硅膜的形成温度的温度下形成的膜。 第一氮化硅膜和第二氮化硅膜通过干法蚀刻同时蚀刻第一氮化硅膜和第二氮化硅膜两者而形成接触孔。 第二电极和像素电极经由接触孔相互连接。 将施加到像素电极的电位不同的电位施加到电容电极，并且由像素电极，第二氮化硅膜和电容电极形成保持电容。
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公开(公告)号：US20100227425A1
公开(公告)日：2010-09-09
申请号：US12662961
申请日：2010-05-13
IPC分类号： H01L21/04
CPC分类号： G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
摘要： The present invention provides a liquid crystal display device having a large holding capacitance in the inside of a pixel. A liquid crystal display device includes a first substrate, a second substrate arranged to face the first substrate in an opposed manner, and liquid crystal sandwiched between the first substrate and the second substrate. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode thereof connected to the video signal line and a second electrode thereof connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film formed above the first silicon nitride film, a capacitance electrode formed above the organic insulation film, and a second silicon nitride film formed above the capacitance electrode and below the pixel electrode. The second silicon nitride film is a film which is formed at a temperature lower than a forming temperature of the first silicon nitride film. The first silicon nitride film and the second silicon nitride film form a contact hole therein by etching both of the first silicon nitride film and the second silicon nitride film collectively by dry etching. The second electrode and the pixel electrode are connected to each other via the contact hole. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
摘要翻译： 本发明提供一种在像素内部具有大的保持电容的液晶显示装置。 液晶显示装置包括第一基板，以相对的方式与第一基板相对地布置的第二基板和夹在第一基板和第二基板之间的液晶。 第一基板包括视频信号线，像素电极，具有连接到视频信号线的第一电极的薄膜晶体管和连接到像素电极的第二电极，形成在第二电极上方的第一氮化硅膜， 形成在第一氮化硅膜上方的有机绝缘膜，形成在有机绝缘膜上方的电容电极和形成在电容电极上方和像素电极下方的第二氮化硅膜。 第二氮化硅膜是在低于第一氮化硅膜的形成温度的温度下形成的膜。 第一氮化硅膜和第二氮化硅膜通过干法蚀刻同时蚀刻第一氮化硅膜和第二氮化硅膜两者而形成接触孔。 第二电极和像素电极经由接触孔相互连接。 将施加到像素电极的电位不同的电位施加到电容电极，并且由像素电极，第二氮化硅膜和电容电极形成保持电容。
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公开(公告)号：US07742113B2
公开(公告)日：2010-06-22
申请号：US11802385
申请日：2007-05-22
IPC分类号： G02F1/1343
CPC分类号： G02F1/133345 , G02F1/133305 , G02F1/133504 , G02F1/133555 , G02F1/134363 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13685 , H01L27/124 , H01L27/1248 , H01L29/78675
摘要： A liquid crystal display device includes first and second opposed facing substrates and liquid crystal sandwiched therebetween. The first substrate includes a thin film transistor having a first electrode thereof connected to a video signal line and a second electrode thereof connected to a pixel electrode, a first silicon nitride film, an organic insulation film, a capacitance electrode, and a second silicon nitride film. The second silicon nitride film is formed at a temperature lower than a forming temperature of the first silicon nitride film. The second electrode and the pixel electrode are connected to each other via a contact hole formed by the first and second silicon nitride films. A potential different from a potential applied to the pixel electrode is applied to the capacitance electrode, and a holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.
摘要翻译： 液晶显示装置包括第一和第二相对的基板和夹在其间的液晶。 第一基板包括薄膜晶体管，其薄膜晶体管的第一电极连接到视频信号线，第二电极连接到像素电极，第一氮化硅膜，有机绝缘膜，电容电极和第二氮化硅 电影。 第二氮化硅膜在比第一氮化硅膜的成形温度低的温度下形成。 第二电极和像素电极通过由第一和第二氮化硅膜形成的接触孔相互连接。 将施加到像素电极的电位不同的电位施加到电容电极，并且由像素电极，第二氮化硅膜和电容电极形成保持电容。
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公开(公告)号：US07570337B2
公开(公告)日：2009-08-04
申请号：US11898278
申请日：2007-09-11
IPC分类号： G02F1/1345
CPC分类号： G02F1/133345 , G02F1/133555 , G02F1/13452 , G02F2001/133357
摘要： In a liquid crystal display device disposed with reflective regions and transmissive regions, two organic insulating films are formed on a connection terminal portion and radial non-uniformities are prevented from occurring when applying the upper organic insulating film. Pixel portions including transmissive regions and reflective regions are formed, and a second organic insulating film is formed between a metal layer that forms reflective electrodes and a transparent conductive film that forms pixel electrodes to planarize concavo-convexities in the reflective electrodes. In contact holes of a connection terminal portion, the inclination of a first organic resin film is made smooth to control the occurrence of radial non-uniformities occurring in the second organic insulating film.
摘要翻译： 在设置有反射区域和透射区域的液晶显示装置中，在连接端子部分上形成两个有机绝缘膜，并且当施加上部有机绝缘膜时防止发生径向不均匀性。 形成包括透射区域和反射区域的像素部分，并且在形成反射电极的金属层和形成像素电极的透明导电膜之间形成第二有机绝缘膜，以平坦化反射电极中的凹凸。 在连接端子部分的接触孔中，使第一有机树脂膜的倾斜平滑，以控制在第二有机绝缘膜中发生的径向非均匀性的发生。
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公开(公告)号：US20070188682A1
公开(公告)日：2007-08-16
申请号：US11674767
申请日：2007-02-14
申请人： Masaru Takabatake , Toshiki Kaneko , Hideo Tanabe
发明人： Masaru Takabatake , Toshiki Kaneko , Hideo Tanabe
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F1/136227
摘要： In a liquid crystal display device with a reflective area and a transmissive area, a reflective electrode and a transmissive electrode are manufactured without an extra process.A metal layer that forms the reflective electrode and a transparent conductive film that forms the transmissive electrode are successively laminated on pixels, each having the transmissive area and the reflective area. A resist film is exposed to light followed by development to form a first pattern so as to simultaneously etch the metal layer and the transparent conductive film. Thereafter, ashing is used to form a second pattern in the resist film so as to etch the metal layer. An organic resin layer is used as a mask to form a contact hole.
摘要翻译： 在具有反射区域和透射区域的液晶显示装置中，制造反射电极和透射电极而不需要额外的工艺。 形成反射电极的金属层和形成透射电极的透明导电膜依次层叠在各自具有透射区域和反射区域的像素上。 将抗蚀剂膜曝光，随后显影以形成第一图案，以便同时蚀刻金属层和透明导电膜。 此后，使用灰化在抗蚀剂膜中形成第二图案以蚀刻金属层。 使用有机树脂层作为掩模来形成接触孔。
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