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    Nematic liquid crystal composition and bistable nematic liquid crystal display
    1.
    发明授权
    Nematic liquid crystal composition and bistable nematic liquid crystal display 失效
    向列型液晶组合物和双稳向列型液晶显示器

    公开(公告)号：US08252202B2

    公开(公告)日：2012-08-28

    申请号：US12451081

    申请日：2008-05-16

    申请人： Hidetoshi Nakata ,  Kiyofumi Takeuchi ,  Haruyoshi Takatsu ,  Daniel Stoenescu ,  Ivan Dozov ,  Jean-Claude Dubois

    发明人： Hidetoshi Nakata ,  Kiyofumi Takeuchi ,  Haruyoshi Takatsu ,  Daniel Stoenescu ,  Ivan Dozov ,  Jean-Claude Dubois

    IPC分类号： C09K19/00 ,  C09K19/06 ,  C09K19/30 ,  C09K19/52

    CPC分类号： C09K19/42 ,  C09K19/44 ,  C09K19/46 ,  Y10T428/10 ,  Y10T428/1036

    摘要： A nematic liquid crystal composition of the present invention includes at least 20% by weight of one, or two or more compounds selected from compound group A; and 5 to 50% by weight of one, or two or more compounds selected from compound group B, wherein the relative proportions of the above-mentioned compounds used in the nematic liquid crystal composition is determined to simultaneously obtain the specific physical characteristics for the composition, and an anchoring breaking voltage Uλ/4 is less than or equal to 25 V when the product (Δn·d) of the refractive index anisotropy (Δn) at 20° C. and the thickness (d) is 140 nm and the liquid crystal composition is confined between two substrates for a bistable nematic liquid crystal display in which at least one of the substrates have a weak zenithal anchoring force.

    摘要翻译： 本发明的向列液晶组合物包含至少20重量％的选自化合物组A中的一种或两种或更多种化合物; 和5〜50重量％的选自化合物组B中的一种或两种以上的化合物，其中确定向列型液晶组合物中使用的上述化合物的相对比例，以同时获得组合物的具体物理特性 ，当在20℃下的折射率各向异性（＆Dgr; n）的产品（＆Dgr; n·d）和厚度（d）为140时，锚定断裂电压Uλ/ 4小于或等于25V 并且液晶组合物被限制在双稳态向列型液晶显示器的两个基板之间，其中至少一个基板具有弱的天顶锚定力。

    NEMATIC LIQUID CRYSTAL COMPOSITION AND BISTABLE NEMATIC LIQUID CRYSTAL DISPLAY
    2.
    发明申请
    NEMATIC LIQUID CRYSTAL COMPOSITION AND BISTABLE NEMATIC LIQUID CRYSTAL DISPLAY 失效
    NEMATIC液晶组合物和BISTABLE NEMATIC液晶显示器

    公开(公告)号：US20110211148A1

    公开(公告)日：2011-09-01

    申请号：US12451081

    申请日：2008-05-16

    申请人： Hidetoshi Nakata ,  Kiyofumi Takeuchi ,  Haruyoshi Takatsu ,  Daniel Stoenescu ,  Ivan Dozov ,  Jean-Claude Dubois

    发明人： Hidetoshi Nakata ,  Kiyofumi Takeuchi ,  Haruyoshi Takatsu ,  Daniel Stoenescu ,  Ivan Dozov ,  Jean-Claude Dubois

    IPC分类号： G02F1/1337 ,  C09K19/30 ,  C09K19/34

    CPC分类号： C09K19/42 ,  C09K19/44 ,  C09K19/46 ,  Y10T428/10 ,  Y10T428/1036

    摘要： A nematic liquid crystal composition of the present invention includes at least 20% by weight of one, or two or more compounds selected from compound group A; and 5 to 50% by weight of one, or two or more compounds selected from compound group B, wherein the relative proportions of the above-mentioned compounds used in the nematic liquid crystal composition is determined to simultaneously obtain the specific physical characteristics for the composition, and an anchoring breaking voltage Uλ/4 is less than or equal to 25 V when the product (Δn·d) of the refractive index anisotropy (Δn) at 20° C. and the thickness (d) is 140 nm and the liquid crystal composition is confined between two substrates for a bistable nematic liquid crystal display in which at least one of the substrates have a weak zenithal anchoring force.

    摘要翻译： 本发明的向列液晶组合物包含至少20重量％的选自化合物组A中的一种或两种或更多种化合物; 和5〜50重量％的选自化合物组B中的一种或两种以上的化合物，其中确定向列型液晶组合物中使用的上述化合物的相对比例，以同时获得组合物的具体物理特性 ，当在20℃下的折射率各向异性（＆Dgr; n）的产品（＆Dgr; n·d）和厚度（d）为140时，锚定断裂电压Uλ/ 4小于或等于25V 并且液晶组合物被限制在双稳态向列型液晶显示器的两个基板之间，其中至少一个基板具有弱的天顶锚定力。

    Method of increasing helical twisting power, optically active compound, liquid crystal compostion containing the same, and liquid crystal display device
    5.
    发明授权
    Method of increasing helical twisting power, optically active compound, liquid crystal compostion containing the same, and liquid crystal display device 有权
    增加螺旋扭力的方法，光学活性化合物，含有其的液晶组合物和液晶显示装置

    公开(公告)号：US07108896B2

    公开(公告)日：2006-09-19

    申请号：US10601803

    申请日：2003-06-24

    申请人： Hidetoshi Nakata ,  Makoto Sasaki ,  Kiyofumi Takeuchi ,  Haruyoshi Takatsu

    发明人： Hidetoshi Nakata ,  Makoto Sasaki ,  Kiyofumi Takeuchi ,  Haruyoshi Takatsu

    IPC分类号： C09K19/36 ,  C09K19/52 ,  C07C69/76 ,  C07C69/74

    CPC分类号： C09K19/586 ,  Y10T428/10

    摘要： A method of increasing helical twisting power (HTP) in an optically active compound used in a liquid crystal material is provided. An optically active compound which exhibits a large HTP value is also provided. Furthermore, a liquid crystal composition which exhibits a high upper temperature limit of the liquid crystal after the addition of the optically active compound, and a liquid crystal display device using the same are provided. In a method, an HTP of a compound having a partial structure represented by formula (A), which has an asymmetric carbon atom, is increased by replacing the partial structure represented by formula (A) by a partial structure represented by formula (B) (wherein * represents the position of an asymmetric carbon atom, Y1 represents a substituent such as an alkyl group and a halogen). A compound is represented by formula (I):

    摘要翻译： 提供了一种在液晶材料中使用的光学活性化合物中提高螺旋扭转力（HTP）的方法。 还提供了表现出大HTP值的光学活性化合物。 此外，提供了在添加光学活性化合物之后显示出液晶的上限温度的液晶组合物和使用其的液晶显示装置。 在一种方法中，通过用式（B）表示的部分结构代替由式（A）表示的部分结构，具有不对称碳原子的由式（A）表示的部分结构的化合物的HTP增加， （其中*表示不对称碳原子的位置，Y 1表示取代基，例如烷基和卤素）。 化合物由式（I）表示：

    Liquid crystal composition and liquid crystal display element
    6.
    发明授权
    Liquid crystal composition and liquid crystal display element 有权
    液晶组成和液晶显示元件

    公开(公告)号：US07112290B2

    公开(公告)日：2006-09-26

    申请号：US10678256

    申请日：2003-10-06

    申请人： Hidetoshi Nakata ,  Kiyofumi Takeuchi

    发明人： Hidetoshi Nakata ,  Kiyofumi Takeuchi

    IPC分类号： C09K19/52

    CPC分类号： C09K19/586 ,  C09K19/2028 ,  Y10T428/10

    摘要： A chiral nematic liquid crystal composition has minimal temperature dependency of the natural pitch and temperature dependency of the wavelength selective reflection and low temperature storage stability thereof is excellent. A chiral nematic liquid crystal composition with a broad liquid crystal temperature range is used in a bistable liquid crystal display element, and a bistable liquid crystal display element comprising the liquid crystal composition. The chiral nematic liquid crystal composition comprises optically active compounds represented by general formula (I-a) and general formula (II-a): R2P1-L1SP2-L2-P3—R3  (II-a) wherein the general formula (II-a) has the same helical twisting direction as the general formula (I-a), and shows a positive temperature dependency for the natural pitch, and a HTP value of at least 3. A bistable liquid crystal display element comprises the liquid crystal composition.

    摘要翻译： 手性向列液晶组合物的自然间距的温度依赖性最小，波长选择反射的温度依赖性和低温保存稳定性优异。 具有宽液晶温度范围的手性向列液晶组合物用于双稳态液晶显示元件和包含液晶组合物的双稳态液晶显示元件。 手性向列液晶组合物包含由通式（Ia）和通式（II-a）表示的光学活性化合物：<？in-line-formula description =“In-line Formulas”end =“lead” SUP> 2 P 1 （II-a） 2 其中通式（II-a）具有与通式（Ia）相同的螺旋扭转方向，并且示出了对于 天然沥青，HTP值至少为3。双稳态液晶显示 y元素包括液晶组合物。

    Method of manufacturing semiconductor device
    7.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US08017511B2

    公开(公告)日：2011-09-13

    申请号：US12045438

    申请日：2008-03-10

    申请人： Hidetoshi Nakata

    发明人： Hidetoshi Nakata

    IPC分类号： H01L21/44

    CPC分类号： H01L21/32139 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  Y10S438/942

    摘要： Etching is performed on an insulating layer 23 and a conductive layer 32 with a photoresist 41 as the mask, to form an opening 51 in the conductive layer 32. After removing the photoresist 41, another insulating layer 24 is formed all over, which is etched back so as to expose a surface of a conductive layer 31, to thereby cover the inner wall of the opening 51. Then etching is performed on the conductive layer 31 with the latter insulating layer 24 as the mask, so as to form another opening 52 in the conductive layer 31. Then still another insulating layer 25 is formed all over, which is then etched back so as to expose a surface of the conductive layer 32, to thereby fill the opening 52 with the last formed insulating layer 25.

    摘要翻译： 在绝缘层23和具有光致抗蚀剂41的导电层32作为掩模的情况下进行蚀刻，以在导电层32中形成开口51.除去光致抗蚀剂41之后，形成另外的绝缘层24，其被蚀刻 背面以暴露导电层31的表面，从而覆盖开口51的内壁。然后，以导电层31进行蚀刻，以绝缘层24作为掩模，形成另一个开口52 然后再整个形成另外的绝缘层25，然后将其回蚀刻以暴露导电层32的表面，从而用最后形成的绝缘层25填充开口52。

    Method of manufacturing semiconductor device, nonvolatile semiconductor memory device and method of manufacturing the same
    8.
    发明授权
    Method of manufacturing semiconductor device, nonvolatile semiconductor memory device and method of manufacturing the same 有权
    半导体装置的制造方法，非易失性半导体存储装置及其制造方法

    公开(公告)号：US06770533B2

    公开(公告)日：2004-08-03

    申请号：US10083611

    申请日：2002-02-27

    申请人： Yoshiaki Hisamune ,  Hidetoshi Nakata

    发明人： Yoshiaki Hisamune ,  Hidetoshi Nakata

    IPC分类号： H01L218247

    CPC分类号： H01L27/11521 ,  H01L27/115

    摘要： Provided are a method of manufacturing a semiconductor, a nonvolatile semiconductor memory device and a method of manufacturing the same, wherein: the memory device has a plurality of memory cells; a buried diffusion layer serves as a signal line; and, a buried diffusion layer disposed adjacent to each of opposite end portions of a lower floating gate is free from variations in width resulted from misalignment occurring in an optical aligner. In the memory device, for example: the floating gate is formed in an active region of a P-type semiconductor substrate through a gate oxide film; an N-type drain region and an N-type source region are formed in opposite end portions of the floating gate; and, a pair of device isolation shielding electrode extends in parallel with the floating gate outside both the drain region and the source region to cover adjacent ones of the memory cells.

    摘要翻译： 提供一种制造半导体的方法，非易失性半导体存储器件及其制造方法，其中：存储器件具有多个存储单元; 掩埋扩散层用作信号线; 并且与下浮动栅极的每个相对端部相邻设置的掩埋扩散层没有由光学对准器中发生的未对准引起的宽度变化。 在存储器件中，例如：浮置栅极通过栅氧化膜形成在P型半导体衬底的有源区中; N型漏极区域和N型源极区域形成在浮动栅极的相对端部; 并且一对器件隔离屏蔽电极与漏极区域和源极区域外的浮置栅极平行地延伸以覆盖相邻的存储器单元。

    Method for fabricating MOS semiconductor device operable in a high voltage range using polysilicon outdiffusion
    9.
    发明授权
    Method for fabricating MOS semiconductor device operable in a high voltage range using polysilicon outdiffusion 失效
    使用多晶硅外扩散制造在高电压范围内工作的MOS半导体器件的方法

    公开(公告)号：US5030584A

    公开(公告)日：1991-07-09

    申请号：US417832

    申请日：1989-10-06

    申请人： Hidetoshi Nakata

    发明人： Hidetoshi Nakata

    IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/336

    CPC分类号： H01L29/66575 ,  H01L21/28123 ,  H01L29/41783 ,  H01L29/6659

    摘要： A method of fabricating an MOS semiconductor device having the improved current-flowing characteristics with ease is disclosed. The method is featured as follows. First, a gate electrode covered by an insulator is formed on a gage insulating film on a semiconductor substrate, portions of the gate insulating film, above source and drain formation areas are removed and polycrystalline silicon layer doped with an impurity of the opposite type so that of the semiconductor substrate is selectively formed on the source and drain formation regions. Then, the impurity of the polycrystalline silicon is thermally diffused into the source and drain and formation region thereby to form shallow source and drain regions. Then, source and drain electrodes contacting with parts of the polycrystalline silicon.

    摘要翻译： 公开了一种制造具有改善的电流流动特性的MOS半导体器件的方法。 方法的特点如下。 首先，在半导体衬底上的规格绝缘膜上形成由绝缘体覆盖的栅电极，去除部分栅极绝缘膜，在源极和漏极形成区域上方，并掺杂有相反类型杂质的多晶硅层，使得 在源极和漏极形成区域上选择性地形成半导体衬底。 然后，多晶硅的杂质被热扩散到源极和漏极和形成区域中，从而形成浅的源极和漏极区域。 然后，源极和漏极与多晶硅的部分接触。

    Method of manufacturing semiconductor device
    10.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07375018B2

    公开(公告)日：2008-05-20

    申请号：US11364051

    申请日：2006-03-01

    申请人： Hidetoshi Nakata

    发明人： Hidetoshi Nakata

    IPC分类号： H01L21/44

    CPC分类号： H01L21/32139 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  Y10S438/942

    摘要： Etching is performed on an insulating layer 23 and a conductive layer 32 with a photoresist 41 as the mask, to form an opening 51 in the conductive layer 32. After removing the photoresist 41, another insulating layer 24 is formed all over, which is etched back so as to expose a surface of a conductive layer 31, to thereby cover the inner wall of the opening 51. Then etching is performed on the conductive layer 31 with the latter insulating layer 24 as the mask, so as to form another opening 52 in the conductive layer 31. Then still another insulating layer 25 is formed all over, which is then etched back so as to expose a surface of the conductive layer 32, to thereby fill the opening 52 with the last formed insulating layer 25.

    摘要翻译： 在绝缘层23和具有光致抗蚀剂41的导电层32作为掩模上进行蚀刻，以在导电层32中形成开口51。 在除去光致抗蚀剂41之后，再次形成另外的绝缘层24，该绝缘层被回蚀，以便露出导电层31的表面，从而覆盖开口51的内壁。 然后在导电层31上进行蚀刻，后者的绝缘层24作为掩模，以便在导电层31中形成另一个开口52。 然后，再次形成另外的绝缘层25，然后将其回蚀刻以暴露导电层32的表面，从而用最后形成的绝缘层25填充开口52。