公开(公告)号：US5973181A

公开(公告)日：1999-10-26

申请号：US999359

申请日：1997-12-29

申请人： Hideyo Ishigaki ,  Yasumasa Watanabe ,  Tomomi Satou

发明人： Hideyo Ishigaki ,  Yasumasa Watanabe ,  Tomomi Satou

IPC分类号： C07C409/38 ,  C08F4/36 ,  C08F4/38

CPC分类号： C07C409/38 ,  C08F4/36

摘要： The novel polyfunctional peroxides are compounds represented by the following general formula (1):R.sup.1 --CX.sub.3 (1)wherein R.sup.1 represents a linear alkyl group having 1 to 3 carbon atoms; and X represents a group: ##STR1## (wherein R.sup.2 represents a linear or branched alkyl group having 1 to 5 carbon atoms).Such polyfunctional peroxides include 1,1,1-tris(t-butylperoxycarbonyloxymethyl)propane and the like. The polymerization initiators for vinyl monomers comprise such polyfunctional peroxides. In the process for polymerizing vinyl monomers, a vinyl monomer is polymerized employing such polyfunctional peroxide at 60 to 160.degree. C.

摘要翻译： 新型多官能过氧化物是由以下通式（1）表示的化合物：R1-CX3（1）其中R1表示具有1至3个碳原子的直链烷基; X表示：（式中，R 2表示碳原子数1〜5的直链或支链烷基）。 这种多官能过氧化物包括1,1,1-三（叔丁基过氧羰基氧基甲基）丙烷等。 乙烯基单体的聚合引发剂包括这种多官能过氧化物。 在聚合乙烯基单体的方法中，使用这种多官能过氧化物在60至160℃聚合乙烯基单体。

公开(公告)号：US6111042A

公开(公告)日：2000-08-29

申请号：US273519

申请日：1999-03-22

申请人： Hideyo Ishigaki ,  Yasumasa Watanabe ,  Tomomi Satou

发明人： Hideyo Ishigaki ,  Yasumasa Watanabe ,  Tomomi Satou

IPC分类号： C07C409/38 ,  C08F4/36 ,  C08F4/38 ,  C07C69/96

CPC分类号： C07C409/38 ,  C08F4/36

摘要： The novel polyfunctional peroxides are compounds represented by the following general formula (1):R.sup.1 -CX.sub.3 ( 1)wherein R.sup.1 represents a linear alkyl group having 1 to 3 carbon atoms; and X represents a group: ##STR1## (wherein R.sup.2 represents a linear or branched alkyl group having 1 to 5 carbon atoms). Such polyfunctional peroxides include 1,1,1-tris(t-butylperoxycarbonyloxymethyl)propane and the like. The polymerization initiators for vinyl monomers comprise such polyfunctional peroxides. In the process for polymerizing vinyl monomers, a vinyl monomer is polymerized employing such polyfunctional peroxide at 60 to 160.degree. C.

摘要翻译： 新型多官能过氧化物是由以下通式（1）表示的化合物：R1-CX3（1）其中R1表示具有1至3个碳原子的直链烷基; X表示：（式中，R 2表示碳原子数1〜5的直链或支链烷基）。 这种多官能过氧化物包括1,1,1-三（叔丁基过氧羰基氧基甲基）丙烷等。 乙烯基单体的聚合引发剂包括这种多官能过氧化物。 在聚合乙烯基单体的方法中，使用这种多官能过氧化物在60至160℃聚合乙烯基单体。

公开(公告)号：US5258465A

公开(公告)日：1993-11-02

申请号：US703832

申请日：1991-05-21

申请人： Shuji Suyama ,  Yasumasa Watanabe ,  Hideyo Ishigaki ,  Hiromi Kumura

发明人： Shuji Suyama ,  Yasumasa Watanabe ,  Hideyo Ishigaki ,  Hiromi Kumura

IPC分类号： C08G67/00 ,  C08F2/00 ,  C08F4/28 ,  C08F4/36 ,  C07C409/00 ,  C07C409/30 ,  C07C409/34 ,  C07C409/38

CPC分类号： C08F4/36

摘要： An ester type polymeric peroxide; has a peroxide group of the formula (I): ##STR1## a group of the formula (I') ##STR2## a group of the formula (II) ##STR3## wherein X stands for one member selected from the group consisting of --CH.sub.2 --CH.sub.2 --, --C.tbd.C-- and ##STR4## continuously bound such that I and I' occur randomly in alternation with II, having a (I):(I') molar ratio in the range of from 9:1 to 1:9 and the [(I)+(I')]:(II) molar ratio in the range of from 6:4 to 4:6, and having an average molecular weight in the range of from 1,000 to 20,000, a polymerization initiator for vinyl type monomer comprising said ester type polymeric peroxide and method for the production of a block copolymer of vinyl type monomer by said polymerization initiator.

公开(公告)号：US20070235804A1

公开(公告)日：2007-10-11

申请号：US11697733

申请日：2007-04-08

申请人： Yasumasa Watanabe ,  Hideaki Teranishi ,  Naoto Fujishima

发明人： Yasumasa Watanabe ,  Hideaki Teranishi ,  Naoto Fujishima

IPC分类号： H01L27/12

CPC分类号： H01L29/78624 ,  H01L29/66325 ,  H01L29/7394

摘要： The SOI lateral semiconductor device includes a semiconductor region of a first conductivity type, a buried oxide film layer in the semiconductor region, a thin active layer on the buried oxide film layer, an anode region in the thin active layer, and a drain layer contacting the buried oxide film layer for confining the minority carriers injected from the anode region to the thin active layer within the thin active layer and for forming a structure that sustains a high breakdown voltage. The SOI lateral semiconductor device can provide a high breakdown voltage and low switching losses using the thin buried oxide film, which can be formed by an implanted oxygen (SIMOX) method.

摘要翻译： SOI横向半导体器件包括第一导电类型的半导体区域，半导体区域中的掩埋氧化物膜层，掩埋氧化物膜层上的薄的有源层，薄的有源层中的阳极区域和与漏极层接触的漏极层 用于将从阳极区域注入的少数载流子限制在薄有源层内的薄有源层并形成维持高击穿电压的结构的掩埋氧化膜层。 SOI侧向半导体器件可以使用可以通过注入氧（SIMOX）方法形成的薄的掩埋氧化膜来提供高的击穿电压和低的开关损耗。

公开(公告)号：US07982524B2

公开(公告)日：2011-07-19

申请号：US12131026

申请日：2008-05-30

申请人： Yuichi Harada ,  Yoshihiro Ikura ,  Yasumasa Watanabe ,  Katsunori Ueno

发明人： Yuichi Harada ,  Yoshihiro Ikura ,  Yasumasa Watanabe ,  Katsunori Ueno

IPC分类号： H03L5/00

CPC分类号： H01L27/0922 ,  H01L27/0222 ,  H01L27/0288 ,  H01L27/0629 ,  H01L27/1203 ,  H01L28/20

摘要： A level shift circuit and a semiconductor device are configured to prevent failure and malfunction even when an excessive negative voltage or ESD surge are applied to a high-voltage power supply terminal. The level shift circuit includes a level shift resistor, a current-limiting resistor connected in series to the level shift resistor, and an n-channel MOSFET, with its drain connected to the current-limiting resistor. An output of the level-up circuit is obtained from the positioned between the level shift resistor and the current-limiting resistor. By providing the current-limiting resistor, the current that flows due to an excessive negative voltage or ESD surge is suppressed to prevent the level shift circuit from failing or malfunctioning.

摘要翻译： 电平移位电路和半导体器件被配置为即使当过高的负电压或ESD浪涌被施加到高压电源端子时也防止故障和故障。 电平移位电路包括电平移位电阻器，与电平移位电阻器串联连接的限流电阻器和n沟道MOSFET，其漏极连接到限流电阻器。 电平转换电路的输出从位于电平移位电阻和限流电阻之间获得。 通过设置限流电阻，抑制由于过大的负电压或ESD浪涌而流动的电流，以防止电平移位电路发生故障或故障。

公开(公告)号：US20060025537A1

公开(公告)日：2006-02-02

申请号：US10538869

申请日：2003-12-25

申请人： Yasumasa Watanabe ,  Tomoyuki Nakamura ,  Hiroshi Okada

发明人： Yasumasa Watanabe ,  Tomoyuki Nakamura ,  Hiroshi Okada

IPC分类号： C08F110/00

CPC分类号： C08L23/26 ,  C08F8/00 ,  C08F210/16

摘要： A hydroxyl-modified ethylene-α-olefin copolymer with excellent coating properties and adhesion properties are produced by heating a mixture containing 100 parts by weight of an ethylene-α-olefin copolymer and 0.1 to 20 parts by weight of a peroxide having a hydroperoxy group. The heating temperature is adjusted within a range from the 10-hour half-life temperature to the 1-minute half-life temperature of the peroxide.

摘要翻译： 通过加热含有100重量份乙烯-α-烯烃共聚物和0.1至20重量份具有氢过氧基的过氧化物的混合物来制备具有优异涂层性能和粘合性能的羟基改性乙烯-α-烯烃共聚物 。 加热温度在从10小时半衰期至过氧化物1分钟半衰期的温度范围内调节。

公开(公告)号：US4726072A

公开(公告)日：1988-02-16

申请号：US004802

申请日：1987-01-09

申请人： Sadahiko Yamashita ,  Makoto Hasegawa ,  Motoi Ohba ,  Tsutomu Shishido ,  Yasumasa Watanabe

发明人： Sadahiko Yamashita ,  Makoto Hasegawa ,  Motoi Ohba ,  Tsutomu Shishido ,  Yasumasa Watanabe

IPC分类号： H03B5/12 ,  H03D7/12 ,  H03D7/14 ,  H03D7/16 ,  H04N7/10 ,  H04B1/26

CPC分类号： H04N7/10 ,  H03B5/1203 ,  H03B5/1231 ,  H03B5/1243 ,  H03D7/161 ,  H03D7/12 ,  H03D7/125 ,  H03D7/1408

摘要： Disclosed is a double converter tuner having an input circuit for performing first band control with respect to an input signal, amplifying a band-controlled input signal after automatic gain control is performed, and further performing second band control of a gain-controlled signal, a first IF (intermediate frequency) converter for converting an output generated from the input circuit to a first IF signal having a higher bandwidth than the reception bandwidth of the input signal, a first IF circuit for amplifying an output from the first IF converter, performing third band control and performing a further amplification, a second IF converter for converting an output generated from the first IF circuit to a second IF signal, and a second IF circuit for amplifying an output from the second IF converter, performing fourth band control, and performing another amplification. The first and second IF converters are arranged on different circuit boards to prevent frequency interference therebetween.

摘要翻译： 公开了一种双转换器调谐器，其具有用于对输入信号执行第一频带控制的输入电路，在执行自动增益控制之后放大带控输入信号，并进一步执行增益控制信号的第二频带控制， 第一IF（中频）转换器，用于将从输入电路产生的输出转换为具有比输入信号的接收带宽更高的带宽的第一IF信号;第一IF电路，用于放大来自第一IF转换器的输出，执行第三IF 频带控制和进一步放大的第二IF转换器，用于将从第一IF电路产生的输出转换为第二IF信号的第二IF转换器，以及用于放大来自第二IF转换器的输出的第二IF电路，执行第四频带控制，以及执行 另一个放大。 第一和第二IF转换器布置在不同的电路板上以防止它们之间的频率干扰。

公开(公告)号：US07476942B2

公开(公告)日：2009-01-13

申请号：US11697733

申请日：2007-04-08

申请人： Yasumasa Watanabe ,  Hideaki Teranishi ,  Naoto Fujishima

发明人： Yasumasa Watanabe ,  Hideaki Teranishi ,  Naoto Fujishima

IPC分类号： H01L29/06

CPC分类号： H01L29/78624 ,  H01L29/66325 ,  H01L29/7394

摘要： The SOI lateral semiconductor device includes a semiconductor region of a first conductivity type, a buried oxide film layer in the semiconductor region, a thin active layer on the buried oxide film layer, an anode region in the thin active layer, and a drain layer contacting the buried oxide film layer for confining the minority carriers injected from the anode region to the thin active layer within the thin active layer and for forming a structure that sustains a high breakdown voltage. The SOI lateral semiconductor device can provide a high breakdown voltage and low switching losses using the thin buried oxide film, which can be formed by an implanted oxygen (SIMOX) method.

摘要翻译： SOI侧向半导体器件包括第一导电类型的半导体区域，半导体区域中的掩埋氧化物膜层，掩埋氧化物膜层上的薄的有源层，薄的有源层中的阳极区域和与漏极层接触的漏极层 用于将从阳极区域注入的少数载流子限制在薄有源层内的薄有源层并形成维持高击穿电压的结构的掩埋氧化膜层。 SOI侧向半导体器件可以使用可以通过注入氧（SIMOX）方法形成的薄的掩埋氧化膜来提供高的击穿电压和低的开关损耗。

公开(公告)号：US07652105B2

公开(公告)日：2010-01-26

申请号：US10538869

申请日：2003-12-25

申请人： Yasumasa Watanabe ,  Tomoyuki Nakamura ,  Hiroshi Okada

发明人： Yasumasa Watanabe ,  Tomoyuki Nakamura ,  Hiroshi Okada

IPC分类号： C08C19/04 ,  C08F8/06 ,  C08F236/20

CPC分类号： C08L23/26 ,  C08F8/00 ,  C08F210/16

摘要： A hydroxyl-modified ethylene-α-olefin copolymer with excellent coating properties and adhesion properties are produced by heating a mixture containing 100 parts by weight of an ethylene-α-olefin copolymer and 0.1 to 20 parts by weight of a peroxide having a hydroperoxy group. The heating temperature is adjusted within a range from the 10-hour half-life temperature to the 1-minute half-life temperature of the peroxide.

摘要翻译： 通过加热含有100重量份乙烯-α-烯烃共聚物和0.1至20重量份具有氢过氧基的过氧化物的混合物来制备具有优异涂层性能和粘合性能的羟基改性乙烯-α-烯烃共聚物 。 加热温度在从10小时半衰期至过氧化物1分钟半衰期的温度范围内调节。

公开(公告)号：US4649315A

公开(公告)日：1987-03-10

申请号：US702759

申请日：1985-02-19

申请人： Hirofumi Inaba ,  Yasumasa Watanabe

发明人： Hirofumi Inaba ,  Yasumasa Watanabe

IPC分类号： H01R33/74 ,  H01R33/76 ,  H01R33/945 ,  H01R33/96 ,  H01R33/965 ,  H01T4/10 ,  H01J17/00 ,  H01J21/00

CPC分类号： H01R33/7635 ,  H01R33/965 ,  H01R33/945

摘要： Contact pieces are accommodated respectively in contact housings in a main body portion. Each of the contact pieces has an intermediate portion extending between a contact portion and a terminal portion and force-fitted and held as a first discharge electrode portion in first positioning grooves. An arcuate grounding conductor is disposed on the main body portion and has integral second discharge electrode portions and dust-prevention lug portions. The second discharge electrode portions are held in confronting and spaced relation to the first discharge electrode portions via discharge gap holes formed in a side wall portion of the main body and are force-fitted and held in second positioning grooves. The first and second discharge electrode portions define discharge gaps therebetween. The first and second discharge electrode portions, inner wall surfaces of the discharge gap holes, and the dust-prevention lug portions define discharge gap chambers with the discharge gaps contained therein, the discharge gap chambers being isolated from the exterior.

摘要翻译： 接触片分别容纳在主体部分的接触壳体中。 每个接触件具有在接触部分和端子部分之间延伸并在第一定位槽中作为第一放电电极部分压配合并保持的中间部分。 弓形接地导体设置在主体部分上，并具有一体的第二放电电极部分和防尘耳​​部。 第二放电电极部分通过形成在主体的侧壁部分中的放电间隙保持与第一放电电极部分相对并间隔开，并且被压配合并保持在第二定位槽中。 第一和第二放电电极部分限定了它们之间的放电间隙。 第一放电电极部分和第二放电电极部分，放电间隙孔的内壁表面和防尘耳部限定了放电间隙室，其中包含放电间隙，放电间隙室与外部隔离。