Phase-Locked Loop
    1.
    发明授权
    Phase-Locked Loop 失效
    锁相环

    公开(公告)号:US07054403B2

    公开(公告)日:2006-05-30

    申请号:US09979254

    申请日:2001-03-21

    IPC分类号: H03D3/24

    CPC分类号: H03L7/10 H03L7/087

    摘要: A phase lock circuit has a signal path to which a phase comparator, a loop filter and a voltage control oscillator are connected in series, the phase comparator being adapted to compare the phase of an input signal VIN with the phase in the output signal of the voltage control oscillator and to output its result of comparison, the loop filter being adapted to receive the output signal of the phase comparator and to output a DC voltage; the voltage control oscillator being adapted to control the output oscillation frequency depending on the DC output voltage of the loop filter, the phase lock circuit further comprising voltage tracking means for adding, to the voltage of the signal path, a signal causing the average voltage in the output voltage of the phase comparator to coincide with a predetermined reference voltage, whereby the voltage tracking means can enlarge the lock range in the phase lock circuit.

    摘要翻译: 锁相电路具有相位比较器,环路滤波器和压控振荡器串联连接的信号路径,该相位比较器适于将输入信号V IN IN的相位与 电压控制振荡器的输出信号的相位并输出其比较结果,环路滤波器适于接收相位比较器的输出信号并输出​​直流电压; 所述电压控制振荡器适于根据所述环路滤波器的直流输出电压来控制所述输出振荡频率,所述锁相电路还包括电压跟踪装置,用于将所述信号路径的电压加到所述信号路径的电压中, 相位比较器的输出电压与预定的参考电压一致,由此电压跟踪装置可以扩大锁相电路中的锁定范围。

    Automatic gain control circuit
    2.
    发明授权
    Automatic gain control circuit 有权
    自动增益控制电路

    公开(公告)号:US09143110B2

    公开(公告)日:2015-09-22

    申请号:US14114519

    申请日:2012-06-29

    IPC分类号: H03G3/10 H03F1/08 H03G3/30

    CPC分类号: H03G3/30 H03G3/3084

    摘要: An automatic gain control circuit (5a) includes a peak detector circuit (10) that detects the peak voltage of the output signal from a variable gain amplifier (3), an average value detection and output amplitude setting circuit (11) that detects the average voltage of the output signals from the variable gain amplifier (3) and adds a voltage ½ the desired output amplitude of the variable gain amplifier (3) to the average voltage, and a high gain amplifier (12) that amplifies the difference between the output voltage of the peak detector circuit (10) and the output voltage of the average value detection and output amplitude setting circuit (11) and controls the gain of the variable gain amplifier (3) using the amplification result as a gain control signal. The peak detector circuit (10) includes transistors (Q1, Q2, Q3), a current source (I1), and a filter circuit. The filter circuit includes a series connection of a resistor (Ra) and a capacitor (C1).

    摘要翻译: 自动增益控制电路(5a)包括检测来自可变增益放大器(3)的输出信号的峰值电压的峰值检测电路(10),检测平均值的平均值检测和输出幅度设定电路(11) 来自可变增益放大器(3)的输出信号的电压,并将可变增益放大器(3)的期望输出幅度的电压½加到平均电压上;以及高增益放大器(12),放大输出 峰值检测器电路(10)的电压和平均值检测和输出幅度设置电路(11)的输出电压,并且使用放大结果来控制可变增益放大器(3)的增益作为增益控制信号。 峰值检测器电路(10)包括晶体管(Q1,Q2,Q3),电流源(I1)和滤波器电路。 滤波电路包括电阻(Ra)和电容器(C1)的串联连接。

    AUTOMATIC GAIN CONTROL CIRCUIT
    3.
    发明申请
    AUTOMATIC GAIN CONTROL CIRCUIT 有权
    自动增益控制电路

    公开(公告)号:US20120326782A1

    公开(公告)日:2012-12-27

    申请号:US13527512

    申请日:2012-06-19

    IPC分类号: H03G3/20

    CPC分类号: H03G1/0023

    摘要: In an automatic gain control circuit, a peak detection circuit detects and outputs the peak voltage of an output signal from a variable gain circuit. An average value detection/output amplitude setting circuit detects the average value voltage of an output signal from the variable gain circuit, and outputs a calculated voltage. An amplification circuit controls the gain of the variable gain circuit by amplifying the difference between the output voltages of the peak detection circuit and average value detection/output amplitude setting circuit. The number of base-emitter junctions of transistors on a path in the peak detection circuit from input ports which receive output signals from the variable gain circuit to an output port which outputs a voltage to the amplification circuit is equal to the number of base-emitter junctions of transistors on a path in the average value detection/output amplitude setting circuit.

    摘要翻译: 在自动增益控制电路中,峰值检测电路检测并输出来自可变增益电路的输出信号的峰值电压。 平均值检测/输出振幅设定电路检测来自可变增益电路的输出信号的平均值电压,并输出计算出的电压。 放大电路通过放大峰值检测电路的输出电压和平均值检测/输出幅度设定电路之间的差来控制可变增益电路的增益。 从输入端口接收峰值检测电路中的路径上的晶体管的基极 - 发射极结数量,该输入端口从可变增益电路接收输出到放大电路的电压的输出端口等于基极 - 发射极 在平均值检测/输出幅度设置电路中的路径上的晶体管的结。

    SIGNAL OUTPUT CIRCUIT
    4.
    发明申请
    SIGNAL OUTPUT CIRCUIT 有权
    信号输出电路

    公开(公告)号:US20120319766A1

    公开(公告)日:2012-12-20

    申请号:US13527510

    申请日:2012-06-19

    IPC分类号: G05F3/02

    CPC分类号: H03K19/017545

    摘要: In a signal output circuit, an input buffer externally receives a single-phase switching instruction signal to switch a state of the output circuit a shutdown disable state or a shutdown enable state, and converts and outputs the single-phase switching instruction signal into a differential switching instruction signal. A generation control circuit outputs a generation control signal for controlling generation of a control voltage in the control voltage generation circuit based on the differential switching instruction signal. A control voltage generation circuit outputs the control voltage upon changing a value of the control voltage in accordance with a logic of the single-phase switching instruction signal. An output circuit externally receives a differential input signal, outputs a differential output signal upon impedance-converting the differential input signal, and switches between the shutdown disable state and the shutdown enable state of the differential input signal.

    摘要翻译: 在信号输出电路中,输入缓冲器从外部接收单相开关指令信号,以将输出电路的状态切换到关闭禁止状态或关断使能状态,并将单相切换指令信号转换并输出到差分 切换指令信号。 一代控制电路根据差动切换指示信号输出用于控制控制电压产生电路中的控制电压产生的发电控制信号。 控制电压产生电路根据单相切换指令信号的逻辑改变控制电压的值来输出控制电压。 输出电路从外部接收差分输入信号,通过对差分输入信号进行阻抗转换来输出差分输出信号,并在差分输入信号的关断禁止状态和关断使能状态之间切换。

    Automatic gain control circuit
    5.
    发明授权
    Automatic gain control circuit 有权
    自动增益控制电路

    公开(公告)号:US08593223B2

    公开(公告)日:2013-11-26

    申请号:US13527512

    申请日:2012-06-19

    IPC分类号: H03G3/10

    CPC分类号: H03G1/0023

    摘要: In an automatic gain control circuit, a peak detection circuit detects and outputs the peak voltage of an output signal from a variable gain circuit. An average value detection/output amplitude setting circuit detects the average value voltage of an output signal from the variable gain circuit, and outputs a calculated voltage. An amplification circuit controls the gain of the variable gain circuit by amplifying the difference between the output voltages of the peak detection circuit and average value detection/output amplitude setting circuit. The number of base-emitter junctions of transistors on a path in the peak detection circuit from input ports which receive output signals from the variable gain circuit to an output port which outputs a voltage to the amplification circuit is equal to the number of base-emitter junctions of transistors on a path in the average value detection/output amplitude setting circuit.

    摘要翻译: 在自动增益控制电路中,峰值检测电路检测并输出来自可变增益电路的输出信号的峰值电压。 平均值检测/输出振幅设定电路检测来自可变增益电路的输出信号的平均值电压,并输出计算出的电压。 放大电路通过放大峰值检测电路的输出电压和平均值检测/输出幅度设定电路之间的差来控制可变增益电路的增益。 从输入端口接收峰值检测电路中的路径上的晶体管的基极 - 发射极结数量,该输入端口从可变增益电路接收输出到放大电路的电压的输出端口等于基极 - 发射极 在平均值检测/输出幅度设置电路中的路径上的晶体管的结。

    AUTOMATIC GAIN CONTROL CIRCUIT
    6.
    发明申请
    AUTOMATIC GAIN CONTROL CIRCUIT 有权
    自动增益控制电路

    公开(公告)号:US20140097901A1

    公开(公告)日:2014-04-10

    申请号:US14114519

    申请日:2012-06-29

    IPC分类号: H03G3/30

    CPC分类号: H03G3/30 H03G3/3084

    摘要: An automatic gain control circuit (5a) includes a peak detector circuit (10) that detects the peak voltage of the output signal from a variable gain amplifier (3), an average value detection and output amplitude setting circuit (11) that detects the average voltage of the output signals from the variable gain amplifier (3) and adds a voltage ½ the desired output amplitude of the variable gain amplifier (3) to the average voltage, and a high gain amplifier (12) that amplifies the difference between the output voltage of the peak detector circuit (10) and the output voltage of the average value detection and output amplitude setting circuit (11) and controls the gain of the variable gain amplifier (3) using the amplification result as a gain control signal. The peak detector circuit (10) includes transistors (Q1, Q2, Q3), a current source (I1), and a filter circuit. The filter circuit includes a series connection of a resistor (Ra) and a capacitor (C1).

    摘要翻译: 自动增益控制电路(5a)包括检测来自可变增益放大器(3)的输出信号的峰值电压的峰值检测电路(10),检测平均值的平均值检测和输出幅度设定电路(11) 来自可变增益放大器(3)的输出信号的电压,并将可变增益放大器(3)的期望输出幅度的电压½加到平均电压上;以及高增益放大器(12),放大输出 峰值检测器电路(10)的电压和平均值检测和输出幅度设置电路(11)的输出电压,并且使用放大结果作为增益控制信号来控制可变增益放大器(3)的增益。 峰值检测器电路(10)包括晶体管(Q1,Q2,Q3),电流源(I1)和滤波器电路。 滤波电路包括电阻(Ra)和电容器(C1)的串联连接。

    Signal output circuit
    7.
    发明授权
    Signal output circuit 有权
    信号输出电路

    公开(公告)号:US08593201B2

    公开(公告)日:2013-11-26

    申请号:US13527510

    申请日:2012-06-19

    IPC分类号: H03L5/00

    CPC分类号: H03K19/017545

    摘要: In a signal output circuit, an input buffer externally receives a single-phase switching instruction signal to switch a state of the output circuit a shutdown disable state or a shutdown enable state, and converts and outputs the single-phase switching instruction signal into a differential switching instruction signal. A generation control circuit outputs a generation control signal for controlling generation of a control voltage in the control voltage generation circuit based on the differential switching instruction signal. A control voltage generation circuit outputs the control voltage upon changing a value of the control voltage in accordance with a logic of the single-phase switching instruction signal. An output circuit externally receives a differential input signal, outputs a differential output signal upon impedance-converting the differential input signal, and switches between the shutdown disable state and the shutdown enable state of the differential input signal.

    摘要翻译: 在信号输出电路中,输入缓冲器从外部接收单相开关指令信号,以将输出电路的状态切换到关闭禁止状态或关断使能状态,并将单相切换指令信号转换并输出到差分 切换指令信号。 一代控制电路根据差动切换指示信号输出用于控制控制电压产生电路中的控制电压产生的发电控制信号。 控制电压产生电路根据单相切换指令信号的逻辑改变控制电压的值来输出控制电压。 输出电路从外部接收差分输入信号,通过对差分输入信号进行阻抗转换来输出差分输出信号,并在差分输入信号的关断禁止状态和关断使能状态之间切换。

    Memory device
    8.
    发明授权
    Memory device 有权
    内存设备

    公开(公告)号:US08397132B2

    公开(公告)日:2013-03-12

    申请号:US12700986

    申请日:2010-02-05

    IPC分类号: G11C29/00

    CPC分类号: G06F11/1048

    摘要: An exemplary memory device has at least one memory chip that stores data and error correcting information. An error detecting circuit in the memory chip performs a calculation on the data and error correcting information to obtain error detection information indicating the locations of bit errors in the data. The uncorrected data and the error detection information are output from the memory chip. The uncorrected data and error detection information may also be output from the memory device, or the memory device may include a memory controller chip with an error correcting circuit that uses the error detection information to correct the bit errors and outputs corrected data from the memory device.

    摘要翻译: 示例性存储器件具有存储数据和纠错信息的至少一个存储器芯片。 存储器芯片中的错误检测电路对数据和纠错信息执行计算,以获得指示数据中位错误的位置的错误检测信息。 未校正的数据和错误检测信息从存储器芯片输出。 还可以从存储器件输出未校正的数据和错误检测信息,或者存储器件可以包括具有错误校正电路的存储器控​​制器芯片,其使用错误检测信息来校正位错误并从存储器件输出校正数据 。

    PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL
    9.
    发明申请
    PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL 审中-公开
    硝酸铝单晶的生产方法

    公开(公告)号:US20120240845A1

    公开(公告)日:2012-09-27

    申请号:US13512627

    申请日:2010-11-29

    IPC分类号: C30B25/14 C30B25/16

    摘要: Disclosed is a novel method wherein an aluminum nitride single crystal having good crystallinity is efficiently and easily manufactured. The method for produsing an aluminum nitride single crystal wherein nitrogen gas is circulated in the presence of a raw material gas generation source, which generates an aluminum gas or an aluminum oxide gas, and a carbon body, and then the aluminum nitride single crystal is grown under a heating condition; characterized in that, at least a part of the carbon body does not directly contact with the raw material gas generation source, at least a part of the raw material gas generation source does not directly contact with the carbon body, the raw material gas generation source and the carbon body are positioned to make a space in which a clearance between the raw material gas generation source, which does not contact with the carbon body, and the carbon body, which does not contact with the raw material gas generation source, is 0.01 to 50 mm, and a heat temperature and a nitrogen gas flow rate are set so as to satisfy a condition for aluminum nitride deposition in a space between the raw material gas generation source, which does not contact with carbon body, and the carbon body, which does not contact with raw material gas generation source.

    摘要翻译: 公开了一种新颖的方法,其中具有良好结晶度的氮化铝单晶被有效且容易地制造。 在生成铝气体或氧化铝气体的原料气体发生源的存在下生成氮气的氮化铝单晶的制造方法和碳体,然后生长氮化铝单晶 在加热条件下 其特征在于,所述碳体的至少一部分不与所述原料气体发生源直接接触,所述原料气体发生源的至少一部分不与碳体直接接触,所述原料气体产生源 并且碳体被定位成使与未与碳体接触的原料气体发生源与不与原料气体发生源接触的碳体之间的间隙为0.01的空间 至50mm,并且设定加热温度和氮气流量以满足与碳体不接触的原料气体发生源与碳体之间的空间中的氮化铝沉积的条件, 其不与原料气体发生源接触。

    Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof
    10.
    发明授权
    Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof 失效
    氮化铝单晶膜,氮化铝单晶多层基板及其制造方法

    公开(公告)号:US08137825B2

    公开(公告)日:2012-03-20

    申请号:US11989841

    申请日:2006-08-01

    IPC分类号: B32B9/00

    CPC分类号: C30B29/403 C30B1/10 C30B25/02

    摘要: In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction.An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the surface of a sapphire substrate, wherein the aluminum nitride single crystal has improved crystallinity and a low density of defects, is provided.

    摘要翻译: 在通过在碳,氮和一氧化碳的存在下加热蓝宝石衬底而在衬底上制造氮化铝单晶膜的方法,与原料蓝宝石衬底和形成的氮化铝单晶不同的铝化合物 在反应体系中存在控制加热气氛中的铝的浓度如氮化铝或氧化铝以促进还原氮化反应。 提供了在蓝宝石衬底的表面上具有氮化铝单晶膜的氮化铝单晶多层衬底,其中所述氮化铝单晶具有改善的结晶度和低密度缺陷。