摘要:
A phase lock circuit has a signal path to which a phase comparator, a loop filter and a voltage control oscillator are connected in series, the phase comparator being adapted to compare the phase of an input signal VIN with the phase in the output signal of the voltage control oscillator and to output its result of comparison, the loop filter being adapted to receive the output signal of the phase comparator and to output a DC voltage; the voltage control oscillator being adapted to control the output oscillation frequency depending on the DC output voltage of the loop filter, the phase lock circuit further comprising voltage tracking means for adding, to the voltage of the signal path, a signal causing the average voltage in the output voltage of the phase comparator to coincide with a predetermined reference voltage, whereby the voltage tracking means can enlarge the lock range in the phase lock circuit.
摘要翻译:锁相电路具有相位比较器,环路滤波器和压控振荡器串联连接的信号路径,该相位比较器适于将输入信号V IN IN的相位与 电压控制振荡器的输出信号的相位并输出其比较结果,环路滤波器适于接收相位比较器的输出信号并输出直流电压; 所述电压控制振荡器适于根据所述环路滤波器的直流输出电压来控制所述输出振荡频率,所述锁相电路还包括电压跟踪装置,用于将所述信号路径的电压加到所述信号路径的电压中, 相位比较器的输出电压与预定的参考电压一致,由此电压跟踪装置可以扩大锁相电路中的锁定范围。
摘要:
An automatic gain control circuit (5a) includes a peak detector circuit (10) that detects the peak voltage of the output signal from a variable gain amplifier (3), an average value detection and output amplitude setting circuit (11) that detects the average voltage of the output signals from the variable gain amplifier (3) and adds a voltage ½ the desired output amplitude of the variable gain amplifier (3) to the average voltage, and a high gain amplifier (12) that amplifies the difference between the output voltage of the peak detector circuit (10) and the output voltage of the average value detection and output amplitude setting circuit (11) and controls the gain of the variable gain amplifier (3) using the amplification result as a gain control signal. The peak detector circuit (10) includes transistors (Q1, Q2, Q3), a current source (I1), and a filter circuit. The filter circuit includes a series connection of a resistor (Ra) and a capacitor (C1).
摘要:
In an automatic gain control circuit, a peak detection circuit detects and outputs the peak voltage of an output signal from a variable gain circuit. An average value detection/output amplitude setting circuit detects the average value voltage of an output signal from the variable gain circuit, and outputs a calculated voltage. An amplification circuit controls the gain of the variable gain circuit by amplifying the difference between the output voltages of the peak detection circuit and average value detection/output amplitude setting circuit. The number of base-emitter junctions of transistors on a path in the peak detection circuit from input ports which receive output signals from the variable gain circuit to an output port which outputs a voltage to the amplification circuit is equal to the number of base-emitter junctions of transistors on a path in the average value detection/output amplitude setting circuit.
摘要:
In a signal output circuit, an input buffer externally receives a single-phase switching instruction signal to switch a state of the output circuit a shutdown disable state or a shutdown enable state, and converts and outputs the single-phase switching instruction signal into a differential switching instruction signal. A generation control circuit outputs a generation control signal for controlling generation of a control voltage in the control voltage generation circuit based on the differential switching instruction signal. A control voltage generation circuit outputs the control voltage upon changing a value of the control voltage in accordance with a logic of the single-phase switching instruction signal. An output circuit externally receives a differential input signal, outputs a differential output signal upon impedance-converting the differential input signal, and switches between the shutdown disable state and the shutdown enable state of the differential input signal.
摘要:
In an automatic gain control circuit, a peak detection circuit detects and outputs the peak voltage of an output signal from a variable gain circuit. An average value detection/output amplitude setting circuit detects the average value voltage of an output signal from the variable gain circuit, and outputs a calculated voltage. An amplification circuit controls the gain of the variable gain circuit by amplifying the difference between the output voltages of the peak detection circuit and average value detection/output amplitude setting circuit. The number of base-emitter junctions of transistors on a path in the peak detection circuit from input ports which receive output signals from the variable gain circuit to an output port which outputs a voltage to the amplification circuit is equal to the number of base-emitter junctions of transistors on a path in the average value detection/output amplitude setting circuit.
摘要:
An automatic gain control circuit (5a) includes a peak detector circuit (10) that detects the peak voltage of the output signal from a variable gain amplifier (3), an average value detection and output amplitude setting circuit (11) that detects the average voltage of the output signals from the variable gain amplifier (3) and adds a voltage ½ the desired output amplitude of the variable gain amplifier (3) to the average voltage, and a high gain amplifier (12) that amplifies the difference between the output voltage of the peak detector circuit (10) and the output voltage of the average value detection and output amplitude setting circuit (11) and controls the gain of the variable gain amplifier (3) using the amplification result as a gain control signal. The peak detector circuit (10) includes transistors (Q1, Q2, Q3), a current source (I1), and a filter circuit. The filter circuit includes a series connection of a resistor (Ra) and a capacitor (C1).
摘要:
In a signal output circuit, an input buffer externally receives a single-phase switching instruction signal to switch a state of the output circuit a shutdown disable state or a shutdown enable state, and converts and outputs the single-phase switching instruction signal into a differential switching instruction signal. A generation control circuit outputs a generation control signal for controlling generation of a control voltage in the control voltage generation circuit based on the differential switching instruction signal. A control voltage generation circuit outputs the control voltage upon changing a value of the control voltage in accordance with a logic of the single-phase switching instruction signal. An output circuit externally receives a differential input signal, outputs a differential output signal upon impedance-converting the differential input signal, and switches between the shutdown disable state and the shutdown enable state of the differential input signal.
摘要:
An exemplary memory device has at least one memory chip that stores data and error correcting information. An error detecting circuit in the memory chip performs a calculation on the data and error correcting information to obtain error detection information indicating the locations of bit errors in the data. The uncorrected data and the error detection information are output from the memory chip. The uncorrected data and error detection information may also be output from the memory device, or the memory device may include a memory controller chip with an error correcting circuit that uses the error detection information to correct the bit errors and outputs corrected data from the memory device.
摘要:
Disclosed is a novel method wherein an aluminum nitride single crystal having good crystallinity is efficiently and easily manufactured. The method for produsing an aluminum nitride single crystal wherein nitrogen gas is circulated in the presence of a raw material gas generation source, which generates an aluminum gas or an aluminum oxide gas, and a carbon body, and then the aluminum nitride single crystal is grown under a heating condition; characterized in that, at least a part of the carbon body does not directly contact with the raw material gas generation source, at least a part of the raw material gas generation source does not directly contact with the carbon body, the raw material gas generation source and the carbon body are positioned to make a space in which a clearance between the raw material gas generation source, which does not contact with the carbon body, and the carbon body, which does not contact with the raw material gas generation source, is 0.01 to 50 mm, and a heat temperature and a nitrogen gas flow rate are set so as to satisfy a condition for aluminum nitride deposition in a space between the raw material gas generation source, which does not contact with carbon body, and the carbon body, which does not contact with raw material gas generation source.
摘要:
In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction.An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the surface of a sapphire substrate, wherein the aluminum nitride single crystal has improved crystallinity and a low density of defects, is provided.