公开(公告)号：US4349409A

公开(公告)日：1982-09-14

申请号：US262793

申请日：1981-05-11

申请人： Hikou Shibayama ,  Tetsuya Ogawa ,  Makoto Kosugi ,  Tokushige Hisatsugu ,  Koichi Kobayashi

发明人： Hikou Shibayama ,  Tetsuya Ogawa ,  Makoto Kosugi ,  Tokushige Hisatsugu ,  Koichi Kobayashi

IPC分类号： H01J37/32 ,  H01J37/34 ,  H01L21/311 ,  H01L21/302 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01J37/32623 ,  H01J37/32568 ,  H01J37/32587 ,  H01J37/34 ,  H01J37/3438 ,  H01L21/31116

摘要： A method and an apparatus for plasma etching semiconductor materials by providing an intermediate electrode between the electrodes in a parallel state type plasma etching apparatus, moving the intermediate electrode by a drive mechanism, and continuously changing from a condition of high input power and high self-bias voltage to a condition of low input power and low self-bias voltage while varying the distance between the intermediate electrode and the first electrode and the RF power, thereby to remove damage or deposits that may have been formed on the surface when the semiconductor material was being subjected to processing.

摘要翻译： 一种等离子体蚀刻半导体材料的方法和装置，其通过在并联状态型等离子体蚀刻装置中的电极之间设置中间电极，通过驱动机构使中间电极移动，并且从输入功率高， 将偏置电压改变为低输入功率和低自偏压的状态，同时改变中间电极和第一电极之间的距离以及RF功率，从而去除当半导体材料上可能已经形成在表面上的损伤或沉积物 正在受到处理。