利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

45 条记录 (耗时 0.022 秒)

    Method of producing an electro-optical device
    6.
    发明授权
    Method of producing an electro-optical device 失效
    电光装置的制造方法

    公开(公告)号：US5879958A

    公开(公告)日：1999-03-09

    申请号：US745933

    申请日：1996-11-07

    申请人： Ken Kawahata ,  Akira Nakano ,  Hirofumi Fukui ,  Hiroyuki Hebiguchi ,  Kenji Yamamoto ,  Chisato Iwasaki

    发明人： Ken Kawahata ,  Akira Nakano ,  Hirofumi Fukui ,  Hiroyuki Hebiguchi ,  Kenji Yamamoto ,  Chisato Iwasaki

    IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786

    CPC分类号： H01L27/1214

    摘要： A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semiconductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions.The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost adjacent thin film transistors.

    摘要翻译： 一种用于制造电光装置的方法，包括形成透明像素电极的第一光刻步骤，形成栅电极的第二光刻和栅极布线;第三光刻步骤，在导致所述绝缘膜的绝缘膜中形成接触孔 像素电极和栅极布线;在栅电极上方形成源电极和漏电极以及沟道部分的第四光刻步骤，以及在钝化膜中形成接触孔并将半导体活性膜隔离在第五光刻步骤的第五光刻步骤 源电极，漏电极和源极布线。 可以减少光刻步骤的数量，以提高相邻薄膜晶体管的产量并降低生产成本。