公开(公告)号：US06250914B1

公开(公告)日：2001-06-26

申请号：US09556943

申请日：2000-04-21

申请人： Hirofumi Katsumata ,  Hideki Ito ,  Hidenori Takahashi ,  Tadashi Ohashi ,  Shuji Tobashi ,  Katsuyuki Iwata

发明人： Hirofumi Katsumata ,  Hideki Ito ,  Hidenori Takahashi ,  Tadashi Ohashi ,  Shuji Tobashi ,  Katsuyuki Iwata

IPC分类号： F27D706

CPC分类号： H01L21/67248 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/16 ,  H01L21/67109

摘要： The present invention provides a wafer heating device which can improve uniformity of a temperature distribution within a surface area of a wafer, with a relatively simple structure. A wafer is supported on a susceptor of annular shape. A first heater of disc shape is disposed below the wafer, and a second heater of annular shape is disposed to surround the first heater. Radiation thermometers are arranged at a ceiling portion of a reaction chamber. The first radiation thermometer measures a temperature of a central area of the wafer, the second radiation thermometer measures a temperature of a peripheral area of the wafer, and the third radiation thermometer measures a temperature of the susceptor. The first heater and the second heater are controlled by independent closed loops. When a wafer is set on the susceptor, a power of the second heater is controlled by using a value measured by the second radiation thermometer as a feedback signal. When no wafer is set on the susceptor, the power of the second heater is controlled by using a value measured by the third radiation thermometer as a feedback signal.

摘要翻译： 本发明提供了一种晶片加热装置，其可以以相对简单的结构提高晶片表面积内的温度分布的均匀性。 晶片支撑在环形基座上。 圆盘形状的第一加热器设置在晶片的下方，并且围绕第一加热器设置环形的第二加热器。 辐射温度计布置在反应室的顶部。 第一辐射温度计测量晶片的中心区域的温度，第二辐射温度计测量晶片的周边区域的温度，并且第三辐射温度计测量基座的温度。 第一个加热器和第二个加热器由独立的闭环控制。 当晶片设置在基座上时，通过使用由第二辐射温度计测量的值作为反馈信号来控制第二加热器的功率。 当基座上没有设置晶片时，通过使用由第三辐射温度计测量的值作为反馈信号来控制第二加热器的功率。

公开(公告)号：US06537924B2

公开(公告)日：2003-03-25

申请号：US09921893

申请日：2001-08-06

申请人： Shuji Tobashi ,  Tadashi Ohashi ,  Shinichi Mitani ,  Hideki Arai ,  Hidenori Takahashi

发明人： Shuji Tobashi ,  Tadashi Ohashi ,  Shinichi Mitani ,  Hideki Arai ,  Hidenori Takahashi

IPC分类号： H01L2131

CPC分类号： C30B29/06 ,  C23C16/24 ,  C23C16/4584 ,  C30B25/14 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.

公开(公告)号：US06245313B1

公开(公告)日：2001-06-12

申请号：US09312695

申请日：1999-05-17

申请人： Kunihiko Suzuki ,  Takaaki Honda ,  Shinichi Mitani ,  Tadashi Ohashi ,  Shuji Tobashi

发明人： Kunihiko Suzuki ,  Takaaki Honda ,  Shinichi Mitani ,  Tadashi Ohashi ,  Shuji Tobashi

IPC分类号： C01B3102

CPC分类号： C04B35/524

摘要： The object of the present invention is to provide a process for manufacturing a product of glassy carbon, having endurance strength to fatigue at elevated temperature, and to thermal fatigue. After curing the material resin in a mold, the cured resin is baked to obtain a glassy carbon piece. The piece is then machined into a predetermined shape. Subsequently, the surface of the piece resulted after machining, is impregnated with the resin. Further, the resin-impregnated piece is baked so as to transform the impregnated resin into glassy carbon.

摘要翻译： 本发明的目的是提供一种制造玻璃碳的产品的方法，其具有耐高温疲劳强度和高温疲劳性能。 在模具中固化材料树脂后，将固化的树脂烘烤以获得玻璃碳片。 然后将该件加工成预定的形状。 随后，在机械加工之后，片材的表面被树脂浸渍。 此外，将树脂浸渍片烘烤以将浸渍树脂转变成玻璃碳。

公开(公告)号：US5744401A

公开(公告)日：1998-04-28

申请号：US620195

申请日：1996-03-22

申请人： Hiroshi Shirai ,  Jun Yoshikawa ,  Youji Ogawa ,  Kazuhiko Kashima ,  Kazuya Ookubo ,  Yukari Kohtari ,  Norihiro Shimoi ,  Masayuki Sanada ,  Shuji Tobashi

发明人： Hiroshi Shirai ,  Jun Yoshikawa ,  Youji Ogawa ,  Kazuhiko Kashima ,  Kazuya Ookubo ,  Yukari Kohtari ,  Norihiro Shimoi ,  Masayuki Sanada ,  Shuji Tobashi

IPC分类号： H01L21/02 ,  H01L21/30 ,  H01L21/306 ,  H01L21/324 ,  H01L21/00

CPC分类号： H01L21/02008 ,  H01L21/3003

摘要： A silicon wafer is mirror-polished until obtaining surface roughness Ra of 0.70-1.00 nm, Rq of 0.80-1.10 nm, or Rt of 4.50-7.00 nm. The resulting wafer is heat-treated at a temperature not lower than 1,200.degree. C. for 30 minutes to 4 hours in a hydrogen gas atmosphere. According to another aspect, a silicon wafer is mirror-polished until obtaining surface roughness values Ra' of 0.08-0.70 nm, rms of 0.10-0.90 nm, and P-V of 0.80-5.80 nm in a square area of 90 .mu.m by 90 .mu.m, and surface roughness values Ra' of 0.13-0.40 nm, rms of 0.18-0.50 nm, and P-V of 1.30-2.50 nm in a square area of 500 nm by 500 nm. The resulting wafer is heat-treated at 1,100.degree.-1,300.degree. C. for 30 minutes to 4 hours in a hydrogen gas atmosphere.

摘要翻译： 对硅晶片进行镜面抛光，直到获得0.70-1.00nm的表面粗糙度Ra，0.80-1.10nm的Rq或4.50-7.00nm的Rt。 将得到的晶片在氢气气氛中在不低于1200℃的温度下热处理30分钟至4小时。 根据另一方面，将硅晶片进行镜面抛光，直到得到表面粗糙度值Ra'为0.08-0.70nm，均方厘米为0.10-0.90nm，PV为0.80-5.80nm，平方90μm的面积为90μm m，表面粗糙度Ra'为0.13-0.40nm，均方根为0.18-0.50nm，PV为1.30-2.50nm，平均面积为500nm至500nm。 将得到的晶片在氢气气氛中在1100〜1300℃下热处理30分钟〜4小时。

公开(公告)号：US20050239267A1

公开(公告)日：2005-10-27

申请号：US11110666

申请日：2005-04-21

申请人： Shuji Tobashi

发明人： Shuji Tobashi

IPC分类号： H01L21/02 ,  H01L21/322 ,  H01L21/477 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/76259

摘要： A substrate manufacturing method includes steps of preparing a bonded substrate stack formed by bonding a second substrate to a first substrate having an insulator at least on a surface, forming a gettering layer to capture a metal contamination on the surface of the bonded substrate stack to form a composite substrate stack, annealing the composite substrate stack, and removing the gettering layer from the composite substrate stack.

摘要翻译： 衬底制造方法包括以下步骤：制备通过将第二衬底结合至至少在表面上具有绝缘体的第一衬底形成的键合衬底叠层，形成吸杂层以捕获键合衬底叠层表面上的金属污染物以形成 复合衬底叠层，退火复合衬底叠层，以及从复合衬底叠层去除吸杂层。