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1.发明授权
公开(公告)号：US5744401A
公开(公告)日：1998-04-28
申请号：US620195
申请日：1996-03-22
申请人： Hiroshi Shirai , Jun Yoshikawa , Youji Ogawa , Kazuhiko Kashima , Kazuya Ookubo , Yukari Kohtari , Norihiro Shimoi , Masayuki Sanada , Shuji Tobashi
发明人： Hiroshi Shirai , Jun Yoshikawa , Youji Ogawa , Kazuhiko Kashima , Kazuya Ookubo , Yukari Kohtari , Norihiro Shimoi , Masayuki Sanada , Shuji Tobashi
IPC分类号： H01L21/02 , H01L21/30 , H01L21/306 , H01L21/324 , H01L21/00
CPC分类号： H01L21/02008 , H01L21/3003
摘要： A silicon wafer is mirror-polished until obtaining surface roughness Ra of 0.70-1.00 nm, Rq of 0.80-1.10 nm, or Rt of 4.50-7.00 nm. The resulting wafer is heat-treated at a temperature not lower than 1,200.degree. C. for 30 minutes to 4 hours in a hydrogen gas atmosphere. According to another aspect, a silicon wafer is mirror-polished until obtaining surface roughness values Ra' of 0.08-0.70 nm, rms of 0.10-0.90 nm, and P-V of 0.80-5.80 nm in a square area of 90 .mu.m by 90 .mu.m, and surface roughness values Ra' of 0.13-0.40 nm, rms of 0.18-0.50 nm, and P-V of 1.30-2.50 nm in a square area of 500 nm by 500 nm. The resulting wafer is heat-treated at 1,100.degree.-1,300.degree. C. for 30 minutes to 4 hours in a hydrogen gas atmosphere.
摘要翻译： 对硅晶片进行镜面抛光，直到获得0.70-1.00nm的表面粗糙度Ra，0.80-1.10nm的Rq或4.50-7.00nm的Rt。 将得到的晶片在氢气气氛中在不低于1200℃的温度下热处理30分钟至4小时。 根据另一方面，将硅晶片进行镜面抛光，直到得到表面粗糙度值Ra'为0.08-0.70nm，均方厘米为0.10-0.90nm，PV为0.80-5.80nm，平方90μm的面积为90μm m，表面粗糙度Ra'为0.13-0.40nm，均方根为0.18-0.50nm，PV为1.30-2.50nm，平均面积为500nm至500nm。 将得到的晶片在氢气气氛中在1100〜1300℃下热处理30分钟〜4小时。
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2.发明授权公开(公告)号：US09083054B2
公开(公告)日：2015-07-14
申请号：US13527284
申请日：2012-06-19
IPC分类号： H01M10/052 , H01M2/16 , H01M4/131 , H01M4/36 , H01M4/48 , H01M4/587 , H01M10/0587 , C01G45/12 , C01G53/00 , B60L3/00 , B60L11/18 , H01M2/34 , H01M4/04 , H01M4/1391 , H01M4/485 , H01M4/62 , H01M10/48 , H01M4/02
CPC分类号： H01M10/052 , B60L3/0046 , B60L3/0069 , B60L11/1879 , C01G45/1228 , C01G53/42 , C01G53/50 , C01P2002/52 , C01P2002/54 , C01P2004/80 , C01P2006/40 , H01M2/1673 , H01M2/34 , H01M4/0404 , H01M4/0471 , H01M4/131 , H01M4/1391 , H01M4/362 , H01M4/366 , H01M4/483 , H01M4/485 , H01M4/587 , H01M4/624 , H01M4/625 , H01M10/0587 , H01M10/48 , H01M10/486 , H01M2004/021 , H01M2220/20 , Y02E60/122 , Y02T10/7005 , Y02T10/7011 , Y02T10/705
摘要： A lithium ion secondary battery is provided with a positive electrode, a negative electrode containing an active material, and an electrolytic solution, wherein the active material includes a core portion capable of occluding and releasing lithium ions, an amorphous or low-crystalline coating portion disposed on at least a part of the surface of the core portion, and a fibrous carbon portion disposed on at least a part of the surface of the coating portion, and the coating portion contains Si and O as constituent elements, while the atomic ratio y (O/Si) of O relative to Si satisfies 0.5≦y≦1.8.
摘要翻译： 锂离子二次电池设置有正极，含有活性物质的负极和电解液，其中活性物质包括能够吸留和释放锂离子的核心部分，非晶态或低结晶性涂层部分 在芯部的表面的至少一部分上，以及设置在涂布部的表面的至少一部分上的纤维状碳部分，涂布部分含有Si和O作为构成元素，而原子比y（ O / Si）相对于Si满足0.5＆nlE; y＆nlE; 1.8。
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3.发明申请LITHIUM ION SECONDARY BATTERY, LITHIUM ION SECONDARY BATTERY NEGATIVE ELECTRODE, BATTERY PACK, ELECTRIC VEHICLE, ELECTRICITY STORAGE SYSTEM, POWER TOOL, AND ELECTRONIC APPARATUS 有权锂离子二次电池，锂离子二次电池负极，电池组，电动车，电力储存系统，电动工具及电子设备公开(公告)号：US20120328945A1
公开(公告)日：2012-12-27
申请号：US13527284
申请日：2012-06-19
CPC分类号： H01M10/052 , B60L3/0046 , B60L3/0069 , B60L11/1879 , C01G45/1228 , C01G53/42 , C01G53/50 , C01P2002/52 , C01P2002/54 , C01P2004/80 , C01P2006/40 , H01M2/1673 , H01M2/34 , H01M4/0404 , H01M4/0471 , H01M4/131 , H01M4/1391 , H01M4/362 , H01M4/366 , H01M4/483 , H01M4/485 , H01M4/587 , H01M4/624 , H01M4/625 , H01M10/0587 , H01M10/48 , H01M10/486 , H01M2004/021 , H01M2220/20 , Y02E60/122 , Y02T10/7005 , Y02T10/7011 , Y02T10/705
摘要： A lithium ion secondary battery is provided with a positive electrode, a negative electrode containing an active material, and an electrolytic solution, wherein the active material includes a core portion capable of occluding and releasing lithium ions, an amorphous or low-crystalline coating portion disposed on at least a part of the surface of the core portion, and a fibrous carbon portion disposed on at least a part of the surface of the coating portion, and the coating portion contains Si and O as constituent elements, while the atomic ratio y (O/Si) of O relative to Si satisfies 0.5≦y≦1.8.
摘要翻译： 锂离子二次电池设置有正极，含有活性物质的负极和电解液，其中活性物质包括能够吸留和释放锂离子的核心部分，非晶态或低结晶性涂层部分 在芯部的表面的至少一部分上，以及设置在涂布部的表面的至少一部分上的纤维状碳部分，涂布部分含有Si和O作为构成元素，而原子比y（ O / Si）相对于Si满足0.5＆nlE; y＆nlE; 1.8。
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4.发明授权Method for making a slant-surface silicon wafer having a reconstructed atomic-level stepped surface structure 有权制造具有重构的原子级台阶表面结构的倾斜表面硅晶片的方法
公开(公告)号：US5966625A
公开(公告)日：1999-10-12
申请号：US187038
申请日：1998-11-06
申请人： Lei Zhong , Norihiro Shimoi , Yoshio Kirino
发明人： Lei Zhong , Norihiro Shimoi , Yoshio Kirino
CPC分类号： H01L29/045 , C30B29/06 , C30B33/00 , H01L21/3247 , H01L22/12
摘要： A single crystal silicon wafer is sliced off so as to have a slant surface that is inclined from plane (001) such that the normal of the slant surface is inclined by 0.01.degree. to 0.2.degree. from direction [001] toward direction [110]. After being cleaned, the silicon wafer is heat-treated at 600-1,300.degree. C. for not less than 1 minute in an ultrapure argon or hydrogen atmosphere containing nitrogen at not more than 0.1 ppm, to thereby cause the slant surface to have a stepped crystal surface structure. The stepped crystal surface structure is constituted of step walls Sa and Sb when it has been formed by a heat treatment in an argon atmosphere, and substantially all of its step walls are of a type Sb when it has been formed by a heat treatment in a hydrogen atmosphere.
摘要翻译： 将单晶硅晶片切割成具有从平面（001）倾斜的倾斜表面，使得倾斜表面的法线从方向[001]朝向[110]方向倾斜0.01°至0.2°。 在清洁后，在含有不大于0.1ppm的氮气的超纯氩或氢气氛中，在600-1300℃下对硅晶片进行不少于1分钟的热处理，从而使倾斜表面具有阶梯状 晶体表面结构。 当在氩气气氛中通过热处理形成阶梯状的晶体表面结构时，由阶梯壁Sa和Sb构成，当通过热处理形成Sb时，基本上所有的台阶壁都是Sb型 氢气氛。
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