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公开(公告)号：US08367439B2
公开(公告)日：2013-02-05
申请号：US13020826
申请日：2011-02-04
IPC分类号： H01L21/00
CPC分类号： H01L51/0031 , H01L51/0032 , H01L51/52 , H01L51/5253 , H01L51/56 , H01L2251/568 , Y10T428/31504
摘要： A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
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2.发明申请公开(公告)号：US20100233931A1
公开(公告)日：2010-09-16
申请号：US12775569
申请日：2010-05-07
IPC分类号： H01J9/50
CPC分类号： H01L51/0031 , H01L51/0032 , H01L51/52 , H01L51/5253 , H01L51/56 , H01L2251/568 , Y10T428/31504
摘要： A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
摘要翻译： 提供一种制造发光器件的方法，其中可以通过调查和修复发光元件的缺陷部分中的短路来执行令人满意的图像显示。 如果对具有缺陷部分的发光元件施加反向偏置电压，则向缺陷部分流过反向电流。 通过使用规定缺陷部位的位置的发射型显微镜来测量从逆向电流流出的光的发射，并且可以通过向缺陷部照射激光，将其转换成绝缘体来修复短路位置。
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3.发明授权公开(公告)号：US08273583B2
公开(公告)日：2012-09-25
申请号：US12775569
申请日：2010-05-07
IPC分类号： H01L21/66
CPC分类号： H01L51/0031 , H01L51/0032 , H01L51/52 , H01L51/5253 , H01L51/56 , H01L2251/568 , Y10T428/31504
摘要： A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
摘要翻译： 提供了一种制造发光器件的方法，其中可以通过调查和修复发光元件的缺陷部分中的短路来执行令人满意的图像显示。 如果对具有缺陷部分的发光元件施加反向偏置电压，则向缺陷部分流过反向电流。 通过使用规定缺陷部位的位置的发射型显微镜来测量从逆向电流流出的光的发射，并且可以通过向缺陷部照射激光，将其转换成绝缘体来修复短路位置。
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4.发明授权公开(公告)号：US07871930B2
公开(公告)日：2011-01-18
申请号：US11061861
申请日：2005-02-22
IPC分类号： H01L21/44
CPC分类号： H01L51/0031 , H01L51/0032 , H01L51/52 , H01L51/5253 , H01L51/56 , H01L2251/568 , Y10T428/31504
摘要： A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
摘要翻译： 提供了一种制造发光器件的方法，其中可以通过调查和修复发光元件的缺陷部分中的短路来执行令人满意的图像显示。 如果对具有缺陷部分的发光元件施加反向偏置电压，则向缺陷部分流过反向电流。 通过使用规定缺陷部位的位置的发射型显微镜来测量从逆向电流流出的光的发射，并且可以通过向缺陷部照射激光，将其转换成绝缘体来修复短路位置。
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公开(公告)号：US20050196892A1
公开(公告)日：2005-09-08
申请号：US11061861
申请日：2005-02-22
CPC分类号： H01L51/0031 , H01L51/0032 , H01L51/52 , H01L51/5253 , H01L51/56 , H01L2251/568 , Y10T428/31504
摘要： A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
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6.发明授权公开(公告)号：US06909111B2
公开(公告)日：2005-06-21
申请号：US10021315
申请日：2001-12-19
CPC分类号： H01L51/0031 , H01L51/0032 , H01L51/52 , H01L51/5253 , H01L51/56 , H01L2251/568 , Y10T428/31504
摘要： A method of manufacturing a light emitting device is provided in which satisfactory image display can be performed by the investigation and repair of short circuits in defect portions of light emitting elements. A backward direction electric current flows in the defect portions if a reverse bias voltage is applied to the light emitting elements having the defect portions. Emission of light which occurred from the backward direction electric current flow is measured by using an emission microscope, specifying the position of the defect portions, and short circuit locations can be repaired by irradiating a laser to the defect portions, turning them into insulators.
摘要翻译： 提供了一种制造发光器件的方法，其中可以通过调查和修复发光元件的缺陷部分中的短路来执行令人满意的图像显示。 如果对具有缺陷部分的发光元件施加反向偏置电压，则向缺陷部分流过反向电流。 通过使用规定缺陷部位的位置的发射型显微镜来测量从逆向电流流出的光的发射，并且可以通过向缺陷部照射激光，将其转换成绝缘体来修复短路位置。
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公开(公告)号：US06893887B2
公开(公告)日：2005-05-17
申请号：US10051895
申请日：2002-01-17
申请人： Hirokazu Yamagata , Hisao Ikeda , Yoshimi Adachi , Noriko Miyagi , Tatsuya Arao , Koji Ono
发明人： Hirokazu Yamagata , Hisao Ikeda , Yoshimi Adachi , Noriko Miyagi , Tatsuya Arao , Koji Ono
CPC分类号： H01L27/3246 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L51/5206 , H01L51/5253
摘要： The surface of an anode is made flat by wiping/cleaning of the present invention. Thereafter, an organic compound layer and a cathode are formed to produce a light emitting element. In this way, the distance between the anode and the cathode becomes constant. Therefore, when an electric field is applied to the light emitting element, the current density in the organic compound layer becomes uniform. Thus, it is possible to prevent the deterioration of the organic compound layer and improve the element characteristic thereof.
摘要翻译： 通过擦拭/清洁本发明使阳极的表面平坦。 此后，形成有机化合物层和阴极以产生发光元件。 以这种方式，阳极和阴极之间的距离变得恒定。 因此，当向发光元件施加电场时，有机化合物层中的电流密度变得均匀。 因此，可以防止有机化合物层的劣化并提高其元件特性。
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8.发明授权Light emitting display device with thin film transistor having organic and inorganic insulating films 有权具有薄膜晶体管的发光显示装置，具有有机和无机绝缘膜公开(公告)号：US07190114B2
公开(公告)日：2007-03-13
申请号：US11120852
申请日：2005-05-03
申请人： Hirokazu Yamagata , Hisao Ikeda , Yoshimi Adachi , Noriko Miyagi , Tatsuya Arao , Koji Ono
发明人： Hirokazu Yamagata , Hisao Ikeda , Yoshimi Adachi , Noriko Miyagi , Tatsuya Arao , Koji Ono
CPC分类号： H01L27/3246 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L51/5206 , H01L51/5253
摘要： A light emitting display device comprises a thin film transistor formed over a substrate, a first insulating film comprising an organic material and formed over the thin film transistor, a second insulating film comprising at least one material selected from the group consisting of aluminum nitride, aluminum nitride oxide, and aluminum oxynitride formed over the first insulating film, an anode formed in contact with the second insulating film, a light emitting layer formed over the anode, and a cathode formed over the light emitting layer.
摘要翻译： 发光显示装置包括形成在基板上的薄膜晶体管，包含有机材料并形成在薄膜晶体管上的第一绝缘膜，第二绝缘膜，包括选自氮化铝，铝 形成在第一绝缘膜上的氮氧化物和氧氮化铝，形成在第二绝缘膜上的阳极，形成在阳极上的发光层，以及形成在发光层上的阴极。
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公开(公告)号：US20050197034A1
公开(公告)日：2005-09-08
申请号：US11120852
申请日：2005-05-03
申请人： Hirokazu Yamagata , Hisao Ikeda , Yoshimi Adachi , Noriko Miyagi , Tatsuya Arao , Koji Ono
发明人： Hirokazu Yamagata , Hisao Ikeda , Yoshimi Adachi , Noriko Miyagi , Tatsuya Arao , Koji Ono
CPC分类号： H01L27/3246 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L51/5206 , H01L51/5253
摘要： The surface of an anode is made flat by wiping/cleaning of the present invention. Thereafter, an organic compound layer and a cathode are formed to produce a light emitting element. In this way, the distance between the anode and the cathode becomes constant. Therefore, when an electric field is applied to the light emitting element, the current density in the organic compound layer becomes uniform. Thus, it is possible to prevent the deterioration of the organic compound layer and improve the element characteristic thereof.
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公开(公告)号：US08497525B2
公开(公告)日：2013-07-30
申请号：US12898775
申请日：2010-10-06
CPC分类号： H01L51/524 , H01L27/3246 , H01L27/3258 , H01L51/0003 , H01L51/5056 , H01L51/5203 , H01L51/5206 , H01L51/5253 , H01L51/56 , Y10S438/976
摘要： A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.
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