公开(公告)号：US20050205126A1

公开(公告)日：2005-09-22

申请号：US11084844

申请日：2005-03-18

申请人： Hiroki Okui ,  Yoji Seki ,  Yoshio Miura ,  Hisao Arimune

发明人： Hiroki Okui ,  Yoji Seki ,  Yoshio Miura ,  Hisao Arimune

IPC分类号： H01L31/04 ,  H01L25/00

CPC分类号： H01L31/035281 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/18 ,  Y02E10/50

摘要： A photovoltaic conversion device has a substrate 1 as a lower electrode having a first region 31 and a second region 32 adjacent to the first region, a lot of semiconductor particles 20 joined to the first region 31, an insulator 4 formed between the semiconductor particles 20 on the substrate 1 in the first region 31 and on the substrate 1 in the second region 32, a transparent conductive layer 5 as an upper electrode formed so as to cover the upper part of the semiconductor particles 20 in the first region 31 and the insulator 4 in the first region 31, and a collecting electrode formed of a finger electrode 15 arranged on the transparent conductive layer 5 in the first region 31 and a bus bar electrode 16 which is arranged in the second region 32 and connected to the finger electrode 15. By making the thickness of the insulator 4 in the second region 32 larger than that of the insulator 4 in the first region, even if generated photocurrents concentrate on the bus bar electrode 16, insulating properties between the substrate 1 and the transparent conductive layer 5 can be ensured stably, thereby to achieve high photovoltaic conversion efficiency.

摘要翻译： 光电转换装置具有作为下电极的基板1，具有与第一区域相邻的第一区域31和第二区域32，与第一区域31接合的大量半导体颗粒20，形成在半导体颗粒20之间的绝缘体 在第一区域31中的基板1和第二区域32中的基板1上，形成作为上部电极的透明导电层5，以覆盖第一区域31中的半导体颗粒20的上部，绝缘体 第一区域31中的透明导电层5上形成的指状电极15和布置在第二区域32中并连接到指状电极15的母线电极16的集电电极 。 通过使第二区域32中的绝缘体4的厚度比第一区域中的绝缘体4的厚度大，即使产生的光电流集中在汇流条电极16上，基板1和透明导电层5之间的绝缘性也可以 稳定地确保光电转换效率。

公开(公告)号：US06844568B2

公开(公告)日：2005-01-18

申请号：US10424163

申请日：2003-04-25

申请人： Yoji Seki ,  Takeshi Kyoda ,  Yoshio Miura ,  Hisao Arimune

发明人： Yoji Seki ,  Takeshi Kyoda ,  Yoshio Miura ,  Hisao Arimune

IPC分类号： H01L21/00 ,  H01L29/04 ,  H01L31/00

CPC分类号： H01L31/035281 ,  H01L31/0384 ,  H01L31/056 ,  H01L31/061 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： There is disclosed a photoelectric conversion device which is manufactured by depositing numerous crystalline semiconductor particles of one conductivity type on a substrate having an electrode of one side to join the crystalline semiconductor particles to the substrate, interposing an insulator among the crystalline semiconductor particles, forming a semiconductor layer of the opposite conductivity type over the crystalline semiconductor particles, and connecting an electrode to the semiconductor layer of the opposite conductivity type, in which the insulator comprises a mixture or reaction product of polysiloxane and polycarbosilane. The insulator interposed among the crystalline semiconductor particles is free from defects such as cracking and peeling, so that a low cost photoelectric conversion device with high reliability can be provided.

摘要翻译： 公开了一种光电转换装置，其通过在具有一侧电极的基板上沉积一种导电类型的多个结晶半导体颗粒而制造，以将结晶半导体颗粒接合到基板，在该晶体半导体颗粒之间插入绝缘体，形成 在结晶半导体颗粒上具有相反导电类型的半导体层，并且将电极连接到相反导电类型的半导体层，其中绝缘体包含聚硅氧烷和聚碳硅烷的混合物或反应产物。 介于结晶半导体颗粒之间的绝缘体没有诸如破裂和剥离的缺陷，从而可以提供具有高可靠性的低成本光电转换装置。

公开(公告)号：US4868554A

公开(公告)日：1989-09-19

申请号：US156875

申请日：1988-02-18

申请人： Takaaki Aoki ,  Katsuyuki Nojima ,  Yoji Seki

发明人： Takaaki Aoki ,  Katsuyuki Nojima ,  Yoji Seki

IPC分类号： G09G5/22 ,  G09G1/02 ,  G09G5/30

CPC分类号： G09G5/30

摘要： A raster scan type display apparatus for displaying characters having attributes. The attributes are, for example: (i) underlining, (ii) reverse video, (iii) high intensity, and (iv) blinking. The characters and attributes are stored in a refresh memmory. The display may be operated in either a field attribute mode or in a character attribute mode. In the field attribute mode, one field attribute byte in the refresh memory sets the attributes for at least one, but usually many characters which follow the field attribute byte in the refresh memory. In the character attribute mode, one character attribute byte in the refresh memory sets the attribute for only one character which precedes the character attribute in the refresh memory. In the character attribute mode, field attributes may be provided (in addition to the character attributes) for strings of characters following the field attributes.