Alignment mark for use in making semiconductor devices

    公开(公告)号:US5847468A

    公开(公告)日:1998-12-08

    申请号:US873563

    申请日:1997-06-12

    摘要: An alignment mark formed on a surface of substrate for aligning with a mask through an irradiation of alignment light, which comprises a step formed with a concave portion and a convex portion and a metallic film deposited along the concave portion and the convex portion. A light absorption layer is formed over at least one of the concave portion and the convex portion reflecting the step, the light absorption layer lying over the concave portion having a different thickness from that of the light absorption layer lying over the convex portion when the light absorption layer is formed over both the concave portion and the convex portion, the light absorption layer comprising a material capable of absorbing at least a portion of wavelength region of the alignment light. The light absorption layer is desirably formed in a larger thickness on the convex portion of the step as compared with that on the concave portion. Desirably, the light absorption layer is a resist capable of absorbing a portion of wavelength region of the alignment light, or a resist containing a material capable of absorbing a portion of wavelength region of the alignment light.

    Alignment mark, manufacturing method thereof, exposing method using the
alignment mark, semiconductor device manufactured using the exposing
method

    公开(公告)号:US5969428A

    公开(公告)日:1999-10-19

    申请号:US86609

    申请日:1998-05-29

    摘要: An alignment mark formed on a surface of substrate for aligning with a mask through an irradiation of alignment light, which comprises a step formed with a concave portion and a convex portion and a metallic film deposited along the concave portion and the convex portion. A light absorption layer is formed over at least one of the concave portion and the convex portion reflecting the step, the light absorption layer lying over the concave portion having a different thickness from that of the light absorption layer lying over the convex portion when the light absorption layer is formed over both the concave portion and the convex portion, the light absorption layer comprising a material capable of absorbing at least a portion of wavelength region of the alignment light. The light absorption layer is desirably formed in a larger thickness on the convex portion of the step as compared with that on the concave portion. Desirably, the light absorption layer is a resist capable of absorbing a portion of wavelength region of the alignment light, or a resist containing a material capable of absorbing a portion of wavelength region of the alignment light.

    摘要翻译: 在基板的表面上形成的对准标记,其通过对准光的照射与掩模对准,其包括形成有凹部和凸部的台阶和沿着凹部和凸部沉积的金属膜。 在反射该台阶的凹部和凸部中的至少一个上形成有光吸收层,该光吸收层位于凹部上方,该光吸收层的厚度与位于凸部上的光吸收层的厚度不同, 吸收层形成在凹部和凸部两者之上,光吸收层包括能够吸收对准光的波长区域的至少一部分的材料。 与步骤中的凹部相比,希望在台阶的凸部形成较大的厚度的光吸收层。 理想地,光吸收层是能够吸收对准光的波长区域的一部分的抗蚀剂,或含有能够吸收取向光的一部分波长区域的材料的抗蚀剂。

    Heat treating method and heat treating apparatus
    3.
    发明授权
    Heat treating method and heat treating apparatus 失效
    热处理方法和热处理装置

    公开(公告)号:US06333493B1

    公开(公告)日:2001-12-25

    申请号:US09666108

    申请日:2000-09-20

    IPC分类号: H05B302

    摘要: Disclosed is a heat treating method for heating a target substrate by means of light irradiation, in which a light irradiation treatment is applied to the target substrate a plurality of times such that adjacent light irradiated regions on the target substrate partially overlap with each other and that the adjacent light irradiated regions do not overlap with each other in the light irradiating periods.

    摘要翻译: 公开了一种用于通过光照射加热目标基板的热处理方法,其中对目标基板进行多次光照射处理,使得目标基板上的相邻光照射区域彼此部分重叠,并且这些相互之间的相邻光照射区域彼此部分重叠, 相邻的光照射区域在光照射期间不重叠。

    Heat treating method and heat treating apparatus
    5.
    发明授权
    Heat treating method and heat treating apparatus 失效
    热处理方法和热处理装置

    公开(公告)号:US06680462B2

    公开(公告)日:2004-01-20

    申请号:US10282114

    申请日:2002-10-29

    IPC分类号: H05B368

    摘要: Disclosed is an apparatus for heating a target substrate by means of light irradiation. The heating apparatus includes a substrate support section for supporting the target substrate, an irradiating light generating section for irradiating the light irradiating regions of the target substrate supported by the substrate support section, and a light irradiating region changing section for changing the light irradiating regions of the target substrate irradiated with the light generated from the irradiating light generation section.

    摘要翻译: 公开了一种通过光照射加热目标基板的装置。 加热装置包括用于支撑目标基板的基板支撑部分,用于照射由基板支撑部分支撑的目标基板的光照射区域的照射光产生部分和用于改变基板支撑部分的光照射区域的光照射区域改变部分 所述目标基板用从所述照射光产生部产生的光照射。

    Heat treating method and heat treating apparatus
    7.
    发明授权
    Heat treating method and heat treating apparatus 失效
    热处理方法和热处理装置

    公开(公告)号:US06495807B2

    公开(公告)日:2002-12-17

    申请号:US09983667

    申请日:2001-10-25

    IPC分类号: H05B302

    摘要: Disclosed is a heat treating method for heating a target substrate by means of light irradiation, in which light irradiation treatment is applied to the target substrate such that the light irradiation regions of the target substrate do not overlap with each other, the light irradiation treatment being performed by using an irradiating light adjusted such that the distribution of the light intensity within the light irradiation region of the target substrate is rendered uniform.

    摘要翻译: 公开了一种通过光照射对目标基板进行加热的热处理方法,其中对目标基板施加光照射处理,使得目标基板的光照射区域彼此不重叠,光照射处理为 通过使用被调整为使得目标基板的光照射区域内的光强度分布变得均匀的照射光进行。

    Pattern forming method and pattern forming apparatus
    8.
    发明授权
    Pattern forming method and pattern forming apparatus 失效
    图案形成方法和图案形成装置

    公开(公告)号:US06806941B2

    公开(公告)日:2004-10-19

    申请号:US10006133

    申请日:2001-12-10

    IPC分类号: G03B2742

    CPC分类号: G03F7/70425

    摘要: A method of forming a pattern for a semiconductor device comprises the steps of forming a photosensitive film on a substrate and radiating the photosensitive film on the substrate with a beam of a predetermined shape consisting of one of a charged particle beam and an electromagnetic beam, thereby forming an exposed region of a desired shape, the latter step including the step of exposing each of unit regions by a single shot of the beam of the predetermined shape for a predetermined period of time, repeating the exposure a plurality of times, and butt-joining the exposed unit regions to thereby form the exposed region of the desired shape, wherein, in the step of forming the exposed region of the desired shape, butting portions of the unit regions are situated in a first area of a layer to be formed other than a second area in the layer in which predetermined characteristics of a function of the semiconductor device are determined by a pattern width of the exposed region in association with another pattern formed in another layer.

    摘要翻译: 一种形成半导体器件的图案的方法包括以下步骤:在基片上形成感光膜,并用由带电粒子束和电磁束之一构成的预定形状的光束将光敏膜照射在基片上,由此 形成期望形状的曝光区域,后一步骤包括通过预定时间段的光束的单次曝光曝光每个单元区域的步骤,重复曝光多次, 接合曝光的单元区域,从而形成所需形状的曝光区域,其中在形成所需形状的曝光区域的步骤中,单元区域的对接部分位于待形成的层的第一区域中 比在半导体器件的功能的预定特性由相关联中的暴露区域的图案宽度确定的层中的第二区域 n在另一层中形成另一图案。

    Exposure method utilizing partial exposure stitch area
    9.
    发明授权
    Exposure method utilizing partial exposure stitch area 失效
    曝光方法采用部分曝光针迹区域

    公开(公告)号:US06333138B1

    公开(公告)日:2001-12-25

    申请号:US09520631

    申请日:2000-03-07

    IPC分类号: G03C500

    摘要: An exposure method of sequential beam, contributing to the improvement of alignment accuracy at connecting portion at the end part of an exposure region, as well as pattern dimension accuracy is provided. The method comprises the steps of dividing an area to be exposed into a plurality of fields each being determined by the deflection width of the main deflector, dividing each field into a plurality of sub-fields each being determined by the deflection width of the sub-deflector, applying a sequential exposure process to each field by using a variable shaped electron beam, and applying a multiple exposure process to an area where adjacent fields overlap each other, wherein the multiple exposure process is conducted in the area in units of sub-field, the exposure dose at each of exposure unit is determined such that the total exposure dosage in the area subject to the multiple exposure process is set equal to an exposure dosage used when single exposure process is applied, the exposure dosage in the area subject to multiple exposure process is decreased in steps, in the direction perpendicular to the longitudinal direction of the boundary portion from the outer edge of the field towards the outside of the field, an exposure dosage in the area subject to the multiple exposure process is determined using the minimum exposure dosage available in the exposure apparatus as the lower limit.

    摘要翻译: 提供顺序光束的曝光方法,有助于提高曝光区域的端部的连接部分的对准精度以及图案尺寸精度。 该方法包括以下步骤:将要暴露的区域划分为多个场,每个场由主偏转器的偏转宽度确定,将每个场分成多个子场,每个子场由子场的偏转宽度确定, 偏转器,通过使用可变形的电子束对每个场施加顺序曝光处理,以及对相邻场相互重叠的区域施加多次曝光处理,其中在该区域中以子场为单位进行多次曝光处理 确定每个曝光单元的曝光剂量,使得经受多次曝光处理的区域中的总曝光剂量设定为等于施加单次曝光处理时使用的曝光剂量,在多个区域内的曝光剂量 曝光过程在从场的外边缘朝向与边界部分的纵向方向垂直的方向上逐步减小 使用曝光装置中可获得的最小曝光剂量作为下限来确定在多次曝光处理区域内的曝光剂量。

    Resist patterns and method of forming resist patterns
    10.
    发明授权
    Resist patterns and method of forming resist patterns 失效
    抗蚀剂图案和形成抗蚀剂图案的方法

    公开(公告)号:US5326672A

    公开(公告)日:1994-07-05

    申请号:US964715

    申请日:1992-10-22

    IPC分类号: G03F7/30 G03C5/00

    CPC分类号: G03F7/30

    摘要: In accordance with a proposed resist pattern forming method, contact angles between the surface of a resist and a rinse is adjusted within a predetermined range, a volatil surfactant which does not remain by drying is mixed in the rinse so as to reduce a surface tension, the rinse is dried under a critical condition of the rinse in order not to cause the surface tension to exert. The occurrence of an attractive force between the resist patterns may be thereby weakened or nullified, so that falling of the patterns can be effectively prevented which very often happened at forming fine resist patterns or resist patterns of high aspect. On the other hand, depending upon structure of said resist pattern, it is possible to effectively prevent outermost main patterns of gathering resist patterns from falling down. By providing such effects, yielding of products are increased. Further, the present invention may be also applied to a lithography illumination sources of which are light, electron, X-ray, ion beam, etc.

    摘要翻译: 根据所提出的抗蚀剂图案形成方法,将抗蚀剂表面和冲洗液之间的接触角调节到预定范围内,将不保持干燥的挥发性表面活性剂在冲洗液中混合以降低表面张力, 冲洗液在冲洗的临界条件下干燥,以免引起表面张力。 因此抗蚀剂图案之间的吸引力的发生可能被削弱或消失,从而可以有效地防止图形的下降,这在形成精细抗蚀剂图案或高方面的抗蚀剂图案时经常发生。 另一方面,根据所述抗蚀剂图案的结构,可以有效地防止聚集抗蚀剂图案的最外面的主要图案掉落。 通过提供这种效果,产品的产量增加。 此外,本发明还可以应用于光,电子,X射线,离子束等的光刻照明源