公开(公告)号：USD717343S1

公开(公告)日：2014-11-11

申请号：US29466879

申请日：2013-09-12

申请人： Hiroyuki Chino ,  Hidehiko Kobayashi ,  Tatsuya Watahiki ,  Kazuo Satou ,  Yoshio Yokozuka ,  Tomonori Oda

设计人： Hiroyuki Chino ,  Hidehiko Kobayashi ,  Tatsuya Watahiki ,  Kazuo Satou ,  Yoshio Yokozuka ,  Tomonori Oda

公开(公告)号：US4302875A

公开(公告)日：1981-12-01

申请号：US41764

申请日：1979-05-23

申请人： Kazuo Satou ,  Mitsuhiko Ueno

发明人： Kazuo Satou ,  Mitsuhiko Ueno

IPC分类号： H01L21/324 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/167 ,  H01L21/40

CPC分类号： H01L21/8238 ,  H01L21/324 ,  H01L27/0921 ,  H01L29/167

摘要： A CMOS device comprising an N type semiconductor substrate, a P type well region diffused in the substrate, an n-channel MOS transistor formed in the P type well region, and a p-channel MOS transistor formed in the N type semiconductor substrate, and a method for manufacturing the CMOS device. In case the CMOS device serves as a CMOS inverter, the source region of the p-channel MOS transistor, the semiconductor substrate and the well layer constitute a parasitic PNP type bipolar transistor, and the source region of the n-channel MOS transistor, the well layer and the semiconductor substrate constitute a parasitic NPN type bipolar transistor. The product of the current amplification factor .beta..sub.1 of the PNP type bipolar transistor and the current amplification factor .beta..sub.2 of the NPN type bipolar transistor is smaller than 1.

摘要翻译： 一种CMOS器件，包括N型半导体衬底，在衬底中扩散的P型阱区，在P型阱区中形成的n沟道MOS晶体管和形成在N型半导体衬底中的p沟道MOS晶体管，以及 一种用于制造CMOS器件的方法。 在CMOS器件用作CMOS反相器的情况下，p沟道MOS晶体管，半导体衬底和阱层的源极区域构成寄生PNP型双极晶体管，并且n沟道MOS晶体管的源极区域 阱层和半导体衬底构成寄生NPN型双极晶体管。 PNP型双极晶体管的电流放大因子β1与NPN型双极晶体管的电流放大因子β2的乘积小于1。

公开(公告)号：US4209713A

公开(公告)日：1980-06-24

申请号：US911164

申请日：1978-05-31

申请人： Kazuo Satou ,  Mitsuhiko Ueno ,  Yasoji Suzuki

发明人： Kazuo Satou ,  Mitsuhiko Ueno ,  Yasoji Suzuki

IPC分类号： H01L27/092 ,  H03K17/16 ,  H01L27/02 ,  H03K17/72 ,  H03K19/40

CPC分类号： H01L27/0921 ,  H03K17/162

摘要： A semiconductor integrated circuit device comprising a CMOS circuit in which parasitic transistors form a parasitic thyristor circuit. In this device, noise absorption resistances are provided at the noise inputs to absorb noise which otherwise might become trigger pulses for the thyristors.

摘要翻译： 一种半导体集成电路器件，包括其中寄生晶体管形成寄生晶闸管电路的CMOS电路。 在该装置中，在噪声输入处提供噪声吸收电阻以吸收另外可能成为可控硅的触发脉冲的噪声。

公开(公告)号：US4167747A

公开(公告)日：1979-09-11

申请号：US890029

申请日：1978-03-24

申请人： Kazuo Satou ,  Mitsuhiko Ueno

发明人： Kazuo Satou ,  Mitsuhiko Ueno

IPC分类号： H01L21/324 ,  H01L27/092 ,  H01L27/02

CPC分类号： H01L21/324 ,  H01L27/0921

摘要： A CMOS device comprising an N type semiconductor substrate, a P type well region diffused in the substrate, an n-channel MOS transistor formed in the P type well region, and a p-channel MOS transistor formed in the N type semiconductor substrate, and a method for manufacturing the CMOS device. In case the CMOS device serves as a CMOS inverter, the source region of the p-channel MOS transistor, the semiconductor substrate and the well layer constitute a parasitic PNP type bipolar transistor, and the source region of the n-channel MOS transistor, the well layer and the semiconductor substrate constitute a parasitic NPN type bipolar transistor. The product of the current amplification factor .beta..sub.1 of the PNP type bipolar transistor and the current amplification factor .beta..sub.2 of the NPN type bipolar transistor is smaller than 1.

摘要翻译： 一种CMOS器件，包括N型半导体衬底，在衬底中扩散的P型阱区，在P型阱区中形成的n沟道MOS晶体管和形成在N型半导体衬底中的p沟道MOS晶体管，以及 一种用于制造CMOS器件的方法。 在CMOS器件用作CMOS反相器的情况下，p沟道MOS晶体管，半导体衬底和阱层的源极区域构成寄生PNP型双极晶体管，并且n沟道MOS晶体管的源极区域 阱层和半导体衬底构成寄生NPN型双极晶体管。 PNP型双极晶体管的电流放大因子β1与NPN型双极晶体管的电流放大因子β2的乘积小于1。

公开(公告)号：US5611592A

公开(公告)日：1997-03-18

申请号：US544760

申请日：1995-10-18

申请人： Kazuo Satou ,  Tomoyuki Inoue ,  Yoshiaki Hino

发明人： Kazuo Satou ,  Tomoyuki Inoue ,  Yoshiaki Hino

IPC分类号： B62D25/08

CPC分类号： B62D25/087

摘要： A rear body structure of an automobile having a door in its rear portion comprises a side panel forming a side surface of an automobile body and a rear panel connected to the side panel and forming a rear surface, the side panel being comprised of an outer side panel and an inner side panel. On an outer surface of a rear part of the inner side panel, there is provided a reinforcing member extending vertically of the body, to which an auxiliary reinforcing member, extending between the inner and outer side panels rearwardly of the body, is connected. The auxiliary reinforcing member is connected at its rear portion to an inner end of the rear panel by means of the corner member. As a result, improved rigidity is provided at the rear panel and connection between the same and the side panel without providing any other member which projects into the inside of the automobile.

摘要翻译： 在其后部具有门的汽车的后车身结构包括形成汽车车体的侧面的侧板和与侧板连接并形成后表面的后板，所述侧板由外侧 面板和内侧面板。 在内侧板的后部的外表面上设置有一个在主体的垂直方向上延伸的加强件，辅助加强件在主体后面的内侧和外侧板之间延伸。 辅助加强构件通过角部件在其后部连接到后面板的内端。 结果，在后面板上提供了改善的刚度，并且在其之间提供了与侧面板之间的连接，而没有提供突出到汽车内部的任何其它构件。

公开(公告)号：US4152717A

公开(公告)日：1979-05-01

申请号：US917175

申请日：1978-06-20

申请人： Kazuo Satou ,  Mitsuhiko Ueno

发明人： Kazuo Satou ,  Mitsuhiko Ueno

IPC分类号： H01L27/092 ,  H01L27/02

CPC分类号： H01L27/0921

摘要： A CMOS FET device having a P well layer diffused in an N type semiconductor substrate, a P channel MOS transistor formed on the N type semiconductor substrate, and an N channel MOS transistor provided in the P well layer, wherein the source of the P channel MOS transistor is made to have the same potential as the N type semiconductor substrate and for the source of the N channel MOS transistor is made to have the same potential as the P well layer, thereby suppressing the operation of a parasitic bipolar transistor whose base is constituted by the N type semiconductor substrate and/or a parasitic bipolar transistor whose base is formed of the P well layer.

摘要翻译： 具有扩散在N型半导体衬底中的P阱层，形成在N型半导体衬底上的P沟道MOS晶体管和设置在P阱层中的N沟道MOS晶体管的CMOS FET器件，其中P沟道源极 使MOS晶体管具有与N型半导体衬底相同的电位，并且使N沟道MOS晶体管的源极具有与P阱层相同的电位，从而抑制基极为N的衬底的寄生双极晶体管的操作 由N型半导体衬底和/或其基极由P阱层形成的寄生双极晶体管构成。

公开(公告)号：US20090302106A1

公开(公告)日：2009-12-10

申请号：US12435470

申请日：2009-05-05

申请人： Kazuo Satou

发明人： Kazuo Satou

IPC分类号： G06Q30/00 ,  G06K15/00 ,  H04Q5/22

CPC分类号： H04Q9/00 ,  G06Q20/203 ,  G06Q20/208 ,  G06Q30/02 ,  G06Q30/0238 ,  H04Q2209/40 ,  H04Q2209/50

摘要： A commercial article information presenting system includes a shopping basket device and a shopping server communicating with the shopping basket device. The shopping basket device acquires a tag ID from an electronic tag attached to a commercial article put in a shopping basket and transmits the tag ID to a shop server. The shop server stores the tag ID received from the shopping basket device, generates screen data for an itemization screen for indicating a commercial article identifier and a unit price corresponding to the stored tag ID, a total of unit prices. The shop server transmits the screen data for the itemization screen to the shopping basket device.

摘要翻译： 商品信息呈现系统包括与购物篮装置通信的购物篮装置和购物服务器。 购物篮装置从安装在购物篮中的商品的电子标签中取得标签ID，并将标签ID发送到商店服务器。 商店服务器存储从购物篮装置接收的标签ID，生成用于指示商品编号标识符和与存储的标签ID对应的单价的分类屏幕的屏幕数据，单位价格的合计。 商店服务器将分页画面的画面数据发送到购物篮装置。

公开(公告)号：US5108538A

公开(公告)日：1992-04-28

申请号：US566893

申请日：1990-08-14

申请人： Satoru Kokubu ,  Susumu Itou ,  Susumu Suga ,  Kazuo Satou

发明人： Satoru Kokubu ,  Susumu Itou ,  Susumu Suga ,  Kazuo Satou

IPC分类号： B29D30/48 ,  B29D30/50

CPC分类号： B29D30/50 ,  B29D30/48 ,  B29D2030/0044 ,  B29D2030/482

摘要： A method and an apparatus for applying the belt-shaped bead filler on the bead core with apex. The method comprises the the step of: rotating a bead core with an apex together with a belt-shaped bead filler; mounting the bead filler on the internal circumferential surface in an approximately cylindrical shape so as to form an overlapping portion; joining at least a part of the overlapping portion; folding up the cylindrical bead filler on both sides of apex and bead core and press-fitting so as to unify them. The apparatus comprises bead supporting means for supporting rotatably abead core with an apex, bead filler guide means having a movable table to mount a starting edge of the bead filler against the internal circumferential surface of the bead core, bead filler cutting means for cutting the bead filler, bead rotating means for rotating the bead core with the bead filler, bead filler joining means for joining at least a part of overlapping portions, bead filler folding-up means for folding up the bead filler and bead filler press-fitting means for adhering the bead filler to the both side faces of the apex and bead core. Thereby, since the belt-type bead filler is folded up after being formed in the shape of cylindrical and the overlapping portion being jointed on both sides of the bead core, it hence becomes possible to enhance the quality of tire by preventing the formation of staggered joint and wrinkles.

公开(公告)号：US4856469A

公开(公告)日：1989-08-15

申请号：US247639

申请日：1988-09-22

申请人： Ken Okazaki ,  Kazuo Satou ,  Junichi Yamamoto

发明人： Ken Okazaki ,  Kazuo Satou ,  Junichi Yamamoto

IPC分类号： F01L1/04 ,  C22C37/04 ,  C22C37/10 ,  F01L1/047 ,  F01L1/18

CPC分类号： F01L1/181 ,  C22C37/10 ,  F01L1/047 ,  F01L2101/00 ,  F01L2105/00 ,  Y10T74/20882 ,  Y10T74/2101

摘要： A valve driving mechanism of which a rocker arm is provided at one end portion with a roller brought into a rotative contact with a cam surface of a cam for driving engine valves. The cam consists of 2.0-4.0 wt % of C, 1.5-3.5 wt % of Si, 0.1-1.0 wt % of Mn, 0.005-0.08 wt % of Mg, less than 0.15 wt % of P, less than 0.15 wt % of S, 0.3-1.0 wt % of Cu, 0.03-0.09 wt % of Mo with the balance of Fe, with a matrix of the cam being a granular graphite cast iron having a mixed structure of 30-50 vol % of residual austenite structure and a bainite structure.

摘要翻译： 一种阀驱动机构，其一端部设置有摇臂，该辊与用于驱动发动机气门的凸轮的凸轮表面旋转接触。 该凸轮由C：2.0-4.0重量％，Si：1.5-3.5重量％，Mn：0.1-1.0重量％，Mg：0.005-0.08重量％，P：0.15重量％以下，小于0.15重量％ S，0.3-1.0重量％的Cu，0.03-0.09重量％的Mo，余量为Fe，凸轮的基体是粒状石墨铸铁，其混合结构为残余奥氏体结构的30-50体积％，和 贝氏体结构。

公开(公告)号：US4450019A

公开(公告)日：1984-05-22

申请号：US480572

申请日：1983-03-30

申请人： Kazuo Satou ,  Masashi Yoritaka

发明人： Kazuo Satou ,  Masashi Yoritaka

IPC分类号： C22C37/10

CPC分类号： C22C37/10

摘要： A ductile cast iron excellent in resistance to both oxidation at high temperatures and thermal fatigue, comprising C: 2.5 to 3.8 wt %, Si: 3.5 to 4.8 wt %, Mn: up to 1.0 wt %, P: up to 0.1 wt %, S: up to 0.1 wt %, Mo: 0.5 to 2.0 wt %, Mg: 0.03 to 0.1 wt %, at least one of Ce and La: 0.02 to 0.5 wt %, and Fe.

摘要翻译： 包括C：2.5〜3.8重量％，Si：3.5〜4.8重量％，Mn：1.0重量％以下，P：0.1重量％以下的耐高温氧化性和热疲劳性优良的球墨铸铁， S：0.1重量％以下，Mo：0.5〜2.0重量％，Mg：0.03〜0.1重量％，Ce和La中的至少一种：0.02〜0.5重量％。