-
公开(公告)号：US07956473B2
公开(公告)日：2011-06-07
申请号：US12178373
申请日：2008-07-23
IPC分类号： H01L23/58 , H01L21/302 , H01L23/52
CPC分类号： H01L21/76838 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02125 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05124 , H01L2224/05147 , H01L2224/05554 , H01L2224/45144 , H01L2224/48463 , H01L2224/48599 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/19043 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： Method of manufacturing semiconductor device including forming inter-layer insulating film on semiconductor substrate. First metal film is formed on inter-layer insulating film. First resist is formed on first metal film and patterned. Anisotropic etching performed on first metal film using first resist as mask. First resist is removed and second metal film is formed on inter-layer insulating film to cover remaining first metal film. Second resist is formed on second metal film in area where first metal film exists on inter-layer insulating film and part of area where first metal film does not exist. Anisotropic etching is performed on second metal film using second resist as mask and bonding pad having first metal film and second metal film, and upper layer wiring having second metal film and not first metal film. Second resist is removed. Surface protection film covering bonding pad is formed. Pad opening is formed on bonding pad.
摘要翻译： 制造半导体器件的方法，包括在半导体衬底上形成层间绝缘膜。 第一金属膜形成在层间绝缘膜上。 第一抗蚀剂在第一金属膜上形成并图案化。 使用第一抗蚀剂作为掩模对第一金属膜进行各向异性蚀刻。 第一抗蚀剂被去除并且第二金属膜形成在层间绝缘膜上以覆盖剩余的第一金属膜。 在层间绝缘膜上存在第一金属膜的区域和不存在第一金属膜的部分区域的第二金属膜上形成第二抗蚀剂。 使用第二抗蚀剂作为掩模和具有第一金属膜和第二金属膜的接合焊盘和具有第二金属膜而不是第一金属膜的上层布线在第二金属膜上进行各向异性蚀刻。 第二抗蚀剂被去除。 形成表面保护膜覆盖焊盘。 焊盘开口形成在焊盘上。
-
公开(公告)号：US20090026635A1
公开(公告)日：2009-01-29
申请号：US12178373
申请日：2008-07-23
IPC分类号： H01L21/302 , H01L23/58
CPC分类号： H01L21/76838 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02125 , H01L2224/02166 , H01L2224/04042 , H01L2224/05093 , H01L2224/05124 , H01L2224/05147 , H01L2224/05554 , H01L2224/45144 , H01L2224/48463 , H01L2224/48599 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/19043 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： A method of manufacturing a semiconductor device comprises: a step of forming an inter-layer insulating film on a semiconductor substrate; a step of forming a first metal film on the inter-layer insulating film; a step of forming a first resist on the first metal film and patterning the first resist; a step of performing anisotropic etching on the first metal film using the first resist as a mask; a step of removing the first resist; a step of forming a second metal film on the inter-layer insulating film so as to cover the remaining first metal film; a step of forming a second resist on the second metal film in an area where the first metal film exists on the inter-layer insulating film and part of an area where the first metal film does not exist; a step of performing anisotropic etching on the second metal film using the second resist as a mask and forming a bonding pad having the first metal film and the second metal film and an upper layer wiring which has the second metal film, yet not the first metal film; a step of removing the second resist; a step of forming a surface protection film so as to cover the bonding pad; and a step of forming a pad opening in the surface protection film on the bonding pad.
摘要翻译： 一种制造半导体器件的方法包括：在半导体衬底上形成层间绝缘膜的步骤; 在所述层间绝缘膜上形成第一金属膜的工序; 在第一金属膜上形成第一抗蚀剂并对第一抗蚀剂进行构图的步骤; 使用第一抗蚀剂作为掩模对第一金属膜进行各向异性蚀刻的步骤; 去除第一抗蚀剂的步骤; 在层间绝缘膜上形成第二金属膜以覆盖剩余的第一金属膜的步骤; 在层间绝缘膜上存在第一金属膜的区域和不存在第一金属膜的区域的一部分的第二金属膜上形成第二抗蚀剂的工序; 使用第二抗蚀剂作为掩模在第二金属膜上进行各向异性蚀刻并形成具有第一金属膜和第二金属膜的接合焊盘和具有第二金属膜的上层布线的步骤，但不是第一金属 电影; 去除第二抗蚀剂的步骤; 形成表面保护膜以覆盖所述接合焊盘的步骤; 以及在接合焊盘上的表面保护膜中形成焊盘开口的步骤。
-
公开(公告)号：US5328792A
公开(公告)日：1994-07-12
申请号：US912397
申请日：1992-07-13
CPC分类号： G03G9/0819 , G03G9/0821 , G03G9/0825 , G03G9/0827 , Y10S430/104
摘要： A non-magnetic one-component developer comprises a binder resin and a colorant, and has a volume-average particle diameter (dv) in a range of 5-15 .mu.m, a ratio (dv/dn) of the volume-average particle diameter (dv) to the number-average particle diameter (dn) in a range of 1.00-1.40, a quotient (Sc/Sr) obtained by dividing the area (Sc) of a circle supposing the absolute maximum length of a particle is a diameter by the real projected area (Sr) of the particle in a range of 1.00-1.30, a product (AxdnxD) of the specific surface area (A) (m.sup.2 /g) as measured in accordance with the BET method, the number-average particle diameter (dn) (.mu.m) and the true specific gravity (D) in a range of 5-10, and a ratio (Q/A) of the charge level (Q) (.mu.c/g) to the specific surface area (A) in a range of 80-150. The developer is substantially spherical from both conditions of Sc/Sr and AxdnxD, and is suitable for use in a development process in which cleaning is conducted at the same time as development. A development process making use of the non-magnetic one-component developer is also disclosed.
摘要翻译： 非磁性单组分显影剂包括粘合剂树脂和着色剂，并且体积平均粒径（dv）在5-15μm的范围内，体积平均粒子的比率（dv / dn） 直径（dv）至数均粒径（dn）的范围为1.00-1.40，通过除以假定绝对最大长度的圆的面积（Sc）得到的商（Sc / Sr）为 粒径在1.00-1.30范围内的实际投影面积（Sr），比表面积（A）的乘积（Axdn×D）（m2 / g），根据BET法测定， 平均粒径（dn）（μm）和真比重（D）在5-10的范围内，以及充电水平（Q）（μc / g）与特定的 表面积（A）在80-150范围内。 显影剂从Sc / Sr和AxdnxD的两个条件基本上是球形的，并且适用于在显影同时进行清洁的显影过程中。 还公开了利用非磁性单组分显影剂的显影方法。
-
-
搜索结果
3 条记录 (耗时 0.021 秒)
