公开(公告)号：US5812381A

公开(公告)日：1998-09-22

申请号：US694214

申请日：1996-08-08

申请人： Hiroyuki Shigeta ,  Mutsumi Nagano

发明人： Hiroyuki Shigeta ,  Mutsumi Nagano

IPC分类号： H01L23/50 ,  H01L23/495 ,  H05K7/02

CPC分类号： H01L23/49558 ,  H01L23/49541 ,  H01L2924/0002

摘要： A lead frame includes a base member having a device hole for accommodating a semiconductor chip therein, a plurality of inner lead portions extended outward from respective sides of the device hole, outer lead portions electrically connected to the inner lead portions, respectively, an adhesion area to which the inner lead portions formed on the base member are adhered, and a plurality of dummy leads disposed on a portion of the adhesion area where a density of the inner lead portions is low.

摘要翻译： 引线框架包括具有用于容纳其中的半导体芯片的器件孔的基底构件，从器件孔的相应侧向外延伸的多个内部引线部分，分别与内部引线部分电连接的外部引线部分， 粘附有形成在基材上的内引线部分的多个虚设引线，以及设置在内引线部分的密度低的粘合区域的一部分上的多个虚设引线。

公开(公告)号：US5349238A

公开(公告)日：1994-09-20

申请号：US950659

申请日：1992-09-23

申请人： Kenji Ohsawa ,  Mutsumi Nagano ,  Akira Kojima ,  Hideyuki Takahashi

发明人： Kenji Ohsawa ,  Mutsumi Nagano ,  Akira Kojima ,  Hideyuki Takahashi

IPC分类号： H01L21/60 ,  H01L21/48 ,  H01L23/495 ,  H01L23/48 ,  H01L29/44 ,  H01L29/52 ,  H01L29/60

CPC分类号： H01L21/4821 ,  H01L23/49524 ,  H01L24/50

摘要： Disclosed is a semiconductor device comprising a lead frame which includes a metal layer forming an outer lead, a thin metal layer forming an inner lead, an intermediate layer held between the thick metal layer and the thin metal layer for forming a connection portion between the outer lead and the inner lead and a bump positioned at the extreme end of the lead frame, whereby making the lead frame as an electrode leading means by directly connecting the bump to each electrode of a semiconductor element, wherein the lead formed of the thick metal layer has a thickness of 30 to 300 .mu.m, the lead formed of the thin metal layer has a thickness of 10 to 50 .mu.m, and the bump has thickness of 5 to 50 .mu.m.

摘要翻译： 公开了一种半导体器件，其包括引线框架，引线框架包括形成外部引线的金属层，形成内部引线的薄金属层，保持在厚金属层和薄金属层之间的中间层，用于形成外部引线之间的连接部分 引线和内引线和位于引线框架的末端的凸块，由此通过将凸块直接连接到半导体元件的每个电极来使引线框架作为电极引导装置，其中由厚金属层形成的引线 厚度为30〜300μm，由薄金属层形成的铅的厚度为10〜50μm，凸块的厚度为5〜50μm。

公开(公告)号：US5937278A

公开(公告)日：1999-08-10

申请号：US732817

申请日：1996-10-15

申请人： Makoto Ito ,  Kenji Ohsawa ,  Mutsumi Nagano

发明人： Makoto Ito ,  Kenji Ohsawa ,  Mutsumi Nagano

IPC分类号： H01L21/48 ,  H01L23/495 ,  H01L21/44 ,  H01L21/60

CPC分类号： H01L21/4828 ,  H01L23/49524 ,  H01L2924/0002 ,  H01L2924/16195

摘要： A method of manufacturing a lead frame comprises the steps of preparing a three-layered material comprising a metal base, an etching stopper layer made of a metal material different from that of the metal layer formed on a first surface of the metal base and a chromium layer formed on the etching stopper layer, forming a resist layer having a negative pattern relative to an inner lead to be formed on the chromium layer of the three-layered material, forming an inner lead by plating copper by using the resist layer as a mask, forming an outer lead on the metal base, removing a back of a region in which an inner lead of the metal base is formed by etching, removing the etching stopper layer, and removing the chromium layer.

摘要翻译： 制造引线框架的方法包括以下步骤：制备包括金属基底的三层材料，由与金属基底的第一表面上形成的金属层不同的金属材料制成的蚀刻阻挡层和铬 形成在蚀刻停止层上的层，形成相对于在三层材料的铬层上形成的内部引线具有负图案的抗蚀剂层，通过使用抗蚀剂层作为掩模，通过电镀铜形成内部引线 在金属基底上形成外部引线，通过蚀刻除去金属基底的内部引线的区域的背面，去除蚀刻停止层，以及去除铬层。

公开(公告)号：US5481798A

公开(公告)日：1996-01-09

申请号：US372247

申请日：1995-01-13

申请人： Kenji Ohsawa ,  Makoto Ito ,  Mutsumi Nagano

发明人： Kenji Ohsawa ,  Makoto Ito ,  Mutsumi Nagano

IPC分类号： H01L21/60 ,  H01L21/48 ,  H01L23/495 ,  H01L23/50 ,  H01R43/00

CPC分类号： H01L24/50 ,  H01L21/4828 ,  H01L23/49524 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  Y10T29/49121 ,  Y10T29/49222

摘要： A lead frame capable of easily connecting an inner lead to an electrode of a semiconductor element by way of a bump of the inner lead, and a method of manufacturing the lead frame capable of significantly easily forming the bump. A bump forming metal layer is formed on a metal base sheet on an area where each inner lead is to be formed. The inner lead is formed on the bump forming metal layer, and the bump forming metal layer is etched using the inner lead as a mask, thus forming a bump. After that, each outer lead is formed by selective etching of the metal base sheet from the rear surface side.

摘要翻译： 能够通过内引线的凸块容易地将内引线与半导体元件的电极连接的引线框架，以及能够容易地形成凸块的引线框架的制造方法。 在要形成内部引线的区域上的金属基片上形成凸起形成金属层。 内部引线形成在凸点形成金属层上，并且使用内部引线作为掩模蚀刻凸块形成金属层，从而形成凸起。 之后，通过从后表面侧选择性地蚀刻金属基片来形成每个外引线。

公开(公告)号：US5437764A

公开(公告)日：1995-08-01

申请号：US248096

申请日：1994-05-24

申请人： Kenji Ohsawa ,  Makoto Ito ,  Mutsumi Nagano

发明人： Kenji Ohsawa ,  Makoto Ito ,  Mutsumi Nagano

IPC分类号： C23F1/00 ,  H01L21/48 ,  H01L21/60 ,  H01L23/495 ,  H01L23/50 ,  B44C1/22 ,  C23F1/02

CPC分类号： H01L24/50 ,  H01L21/4828 ,  H01L23/49524 ,  H01L23/49558 ,  H01L23/49582 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  Y10T29/49121

摘要： An inner lead of a lead frame has an outer end portion extending so as to be connected with a side surface of an etching stop layer and with an upper surface of an outer lead. The outer lead is formed by etching both surfaces of a metal base, and the inner lead is formed by plating metal on the metal base with a resist layer used as a mask. The pitch of the outer lead can be made fine, and a bonding strength of the inner lead to the outer lead can be increased.

摘要翻译： 引线框架的内引线具有延伸的外端部分，以便与蚀刻停止层的侧表面和外引线的上表面连接。 通过蚀刻金属基底的两个表面形成外部引线，并且通过用金属基底上的金属作为掩模的抗蚀剂层，形成内部引线。 能够使外引线的间距变细，能够提高内引线与外引线的接合强度。