摘要:
Disclosed is a semiconductor device comprising a lead frame which includes a metal layer forming an outer lead, a thin metal layer forming an inner lead, an intermediate layer held between the thick metal layer and the thin metal layer for forming a connection portion between the outer lead and the inner lead and a bump positioned at the extreme end of the lead frame, whereby making the lead frame as an electrode leading means by directly connecting the bump to each electrode of a semiconductor element, wherein the lead formed of the thick metal layer has a thickness of 30 to 300 .mu.m, the lead formed of the thin metal layer has a thickness of 10 to 50 .mu.m, and the bump has thickness of 5 to 50 .mu.m.
摘要:
A method for producing a lead frame which comprises selectively forming a photoresist film on both sides of a lead frame material of three-layered structure, with an etching stop layer interposed between two metal layers, etching both sides thereof using the photoresist film as a mask, and removing the unnecessary part of the etching stop layer.
摘要:
Metal films (for instance, gold films or palladium films) to constitute bumps are formed on a metal base by electrolytic plating. Then, a circuit wiring including inner leads is formed by electrolytic plating with a metal so that the inner leads are connected to the respective metal films.
摘要:
Metal films (for instance, gold films or palladium films) to constitute bumps are formed on a metal base by electrolytic plating. Then, a circuit wiring including inner leads is formed by electrolytic plating with a metal so that the inner leads are connected to the respective metal films.
摘要:
Liquid to be injected from an injection nozzle is supplied through a liquid supply channel toward the injection nozzle. Negative pressure for sucking the liquid injected from the injection nozzle through a suction port is produced by a suction unit and guided through a suction channel toward the suction port. A bypass channel which bypasses the liquid supply channel on the upstream side with respect to the injection nozzle and connects with the suction channel is provided. The bypass channel is opened and closed by an opening and closing unit. According to this structure, flow of unnecessary liquid from the injection nozzle can be reduced by opening the opening and closing unit while injection of liquid is stopping.
摘要:
According to an embodiment, a transmission apparatus is installed in a locomotive having ID information. A first connecting direction and a second connecting direction opposite the first connecting direction are defined for the locomotive. The transmission apparatus includes a transmission unit and a connection state determination unit. The transmission unit transmits the ID information received from other locomotive from one of the first connecting direction and the second connecting direction to other one of the first connecting direction and the second connecting direction. The connection state determination unit determines a connection state between the other locomotive and the locomotive in which the transmission apparatus is installed, based on the received ID information.
摘要:
Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.
摘要:
A power supply control method of performing a feedback control of an output voltage based on a deviation signal for a standard voltage value serving as a target value for the output voltage and a digital signal generated by analog/digital (A/D) conversion of the output voltage, the method includes selecting a range of the reference voltage for the A/D conversion based on the digital signal in a power supply startup period, and selecting a range of the reference voltage for the A/D conversion based on the deviation signal or a signal corresponding to the deviation signal in a steady state period.
摘要:
A control device includes a first terminal receiving a monitored output voltage and a second terminal transmitting a pulse width modulation (PWM) signal. A converting unit generates an A/D conversion synchronous signal, and an A/D converter samples the monitored output voltage in accordance with the A/D conversion synchronous signal. A pulse oscillator controls a position of a first edge on the PWM signal in accordance with the A/D conversion synchronous signal, and controls a position of a second edge based on the monitored voltage.
摘要:
A power supply controller includes an analog to digital (A/D) converter that performs analog-digital conversion of an output voltage and outputs a digital signal, a deviation signal generator unit that generates a deviation signal from the digital signal and a standard voltage value serving as an output voltage target value, and a power controller unit that controls the output voltage based on the deviation signal. The power supply controller includes a conversion range setting unit that sets a range of the reference voltage into the A/D converter based on a first signal as the digital signal in a power supply startup period, and sets the reference voltage range into the A/D converter based on a second signal as the deviation signal or as a signal corresponding to the deviation signal in a steady state period.