公开(公告)号：US20070267942A1

公开(公告)日：2007-11-22

申请号：US11746955

申请日：2007-05-10

申请人： Hisanori MATSUMOTO ,  Atsushi ISOBE

发明人： Hisanori MATSUMOTO ,  Atsushi ISOBE

IPC分类号： H03H9/25

CPC分类号： H03H9/02543 ,  H03H9/02228 ,  H03H9/02637 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175 ,  H03H9/178

摘要： A piezoelectric film resonator for a radio-frequency circuit according to an aspect of the present invention includes a substrate and a multilayer film provided on the substrate. The multilayer film has a stacked structure in which at least two piezoelectric layers and at least three electrode layers disposed with each of the piezoelectric layers therebetween are stacked. At least one of the electrode layers is an electrode layer for excitation. The electrode layer for excitation has a structure in which a plurality of unit patterns as elements of the electrode layer for excitation are disposed periodically along a direction substantially perpendicular to a stacked direction of the stacked structure.

摘要翻译： 根据本发明的一个方面的用于射频电路的压电膜谐振器包括衬底和设置在衬底上的多层膜。 多层膜具有叠层结构，其中至少两个压电层和至少三个设置在它们之间的压电层之间的电极层被堆叠。 至少一个电极层是用于激发的电极层。 用于激发的电极层具有其中作为用于激发的电极层的元件的多个单元图案沿着与层叠结构的堆叠方向基本垂直的方向周期性地布置的结构。

公开(公告)号：US20110037343A1

公开(公告)日：2011-02-17

申请号：US12832832

申请日：2010-07-08

申请人： Atsushi ISOBE ,  Kengo Asai

发明人： Atsushi ISOBE ,  Kengo Asai

IPC分类号： H01L41/04

CPC分类号： H03H9/0222 ,  H03H9/02559

摘要： In a boundary elastic wave resonator formed with a cross finger type transducer (IDT) of a wave length λ of a boundary elastic wave, a silicon oxide film, and an aluminum nitride film above a surface of a θYX-LN single-crystal piezoelectric substrate having a predetermined cut angle θ, a film thickness h1 and a cut angle θ or the like of the silicon oxide film are optimized. For example, the film thickness h1 and the cut angle θ are made to be 127.5°≦θ≦129.5° and 20%≦h1/λ≦100%.

摘要翻译： 在由边界弹性波的波长λ的交叉型换能器（IDT）形成的边界弹性波谐振器中，氧化硅膜和在该表面上方的氮化铝膜; YX-LN单晶 具有预定切割角度的压电基片;膜厚度h1和切割角度; 优化氧化硅膜等。 例如，膜厚度h1和切割角度＆amp; 制成为127.5°＆nlE;＆amp; thetas;＆nlE; 129.5°和20％＆nlE; h1 /λ＆nlE; 100％。

公开(公告)号：US20090295508A1

公开(公告)日：2009-12-03

申请号：US12473755

申请日：2009-05-28

申请人： Atsushi ISOBE ,  Kengo Asai

发明人： Atsushi ISOBE ,  Kengo Asai

IPC分类号： H03H9/64

CPC分类号： H03H9/0222

摘要： Boundary acoustic wave devices are both compact and possess excellent temperature stability. Yet these devices have the drawback that the Q value cannot be raised, and a high cost thin-film technology is required. This invention provides a boundary acoustic wave device possessing excellent Q value along with a low cost. A boundary acoustic wave device including a film whose main ingredient is aluminum at a thickness hm, and a shorting reflector (thickness hr) and a IDT with an electrode finger period of lambda, are patterned onto the surface of a theta YX-LN single crystalline piezoelectric substrate; and a silicon oxide film with a thickness h1 and an aluminum nitride film 6 with a thickness h2 are formed on that comb electrode and reflector, wherein: 2.5≦hr/λ≦8.5% is obtained.

摘要翻译： 边界声波装置既紧凑又具有优异的温度稳定性。 然而，这些器件具有不能提高Q值的缺点，并且需要高成本的薄膜技术。 本发明提供了具有优异的Q值和低成本的弹性边界波装置。 包括其主要成分为厚度为h m的铝和短路反射器（厚度hr）的薄膜和电极指期为λ的IDT的边界声波装置被图案化到θYX-LN单晶 压电基板; 并且在该梳状电极和反射器上形成具有厚度h1的氧化硅膜和厚度为h2的氮化铝膜6，其中：2.5hr /λ