公开(公告)号：US06348367B1

公开(公告)日：2002-02-19

申请号：US08861001

申请日：1997-05-21

申请人： Hisashi Ohtani ,  Hiroki Adachi ,  Akiharu Miyanaga ,  Toru Takayama

发明人： Hisashi Ohtani ,  Hiroki Adachi ,  Akiharu Miyanaga ,  Toru Takayama

IPC分类号： H01L2128

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/1214 ,  H01L27/1277 ,  H01L27/1292 ,  H01L29/66757

摘要： In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550° C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous silicon is precisely controlled. A resist mask 21 is formed on the surface of an amorphous silicon film 12 provided on a glass substrate 11, and an aqueous solution 14, e.g., an acetate solution, containing a catalyst element such as nickel at a concentration controlled in a range of from 10 to 200 ppm (need to be adjusted) is supplied dropwise thereto. After maintaining the state for a predetermined duration of time, the entire substrate is subjected to spin drying using a spinner 15. A thin film of crystalline silicon is finally obtained by applying heat treatment at 550° C. for a duration of 4 hours.

摘要翻译： 在通过使用催化剂元素在约550℃下进行约4小时的热处理使非晶硅膜结晶的方法中，用于加速结晶的催化剂元素的量将被引入非晶态 硅精确控制。 在设置在玻璃基板11上的非晶硅膜12的表面上形成抗蚀剂掩模21和含有催化剂元素如镍的水溶液14，例如乙酸盐溶液，其浓度控制在 向其中滴加10〜200ppm（需要调节）。 在将状态保持预定的持续时间之后，使用旋转器15对整个基板进行旋转干燥。最后通过在550℃下进行热处理4小时来获得晶体硅薄膜。

公开(公告)号：US06798023B1

公开(公告)日：2004-09-28

申请号：US09593765

申请日：2000-06-14

申请人： Hisashi Ohtani ,  Hiroki Adachi ,  Akiharu Miyanaga ,  Toru Takayama

发明人： Hisashi Ohtani ,  Hiroki Adachi ,  Akiharu Miyanaga ,  Toru Takayama

IPC分类号： H01L2976

CPC分类号： H01L27/1277 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1214 ,  H01L29/66757

摘要： A semiconductor device comprising a semiconductor layer having at least first and second impurity regions and a channel formation region formed on an insulating surface; a gate insulating film adjacent to the semiconductor layer; a gate electrode adjacent to the gate insulating film; a first insulating film formed over the insulating surface, the semiconductor layer, the gate insulating film and the gate electrode; a second insulating film comprising an organic resin formed on first insulating film; an electrode formed over the second insulating film and connected to the one of the first and second impurity regions; and a pixel electrode formed over the second insulating film.

摘要翻译： 一种半导体器件，包括至少具有第一和第二杂质区域的半导体层和形成在绝缘表面上的沟道形成区域; 与半导体层相邻的栅极绝缘膜; 与栅极绝缘膜相邻的栅电极; 形成在绝缘表面上的第一绝缘膜，半导体层，栅极绝缘膜和栅电极; 第二绝缘膜，包括形成在第一绝缘膜上的有机树脂; 形成在所述第二绝缘膜上并连接到所述第一和第二杂质区之一的电极; 以及形成在所述第二绝缘膜上的像素电极。

公开(公告)号：US07141461B2

公开(公告)日：2006-11-28

申请号：US10878687

申请日：2004-06-29

申请人： Hisashi Ohtani ,  Hiroki Adachi ,  Akiharu Miyanaga ,  Toru Takayama

发明人： Hisashi Ohtani ,  Hiroki Adachi ,  Akiharu Miyanaga ,  Toru Takayama

IPC分类号： H01L21/84

CPC分类号： H01L27/1277 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1214 ,  H01L29/66757

摘要： In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550° C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous silicon is precisely controlled. A resist mask 21 is formed on the surface of an amorphous silicon film 12 provided on a glass substrate 11, and an aqueous solution 14, e.g., an acetate solution, containing a catalyst element such as nickel at a concentration controlled in a range of from 10 to 200 ppm (need to be adjusted) is supplied dropwise thereto. After maintaining the state for a predetermined duration of time, the entire substrate is subjected to spin drying using a spinner 15. A thin film of crystalline silicon is finally obtained by applying heat treatment at 550° C. for a duration of 4 hours.

摘要翻译： 在通过使用催化剂元素在约550℃下进行约4小时的热处理使非晶硅膜结晶的方法中，用于加速结晶的催化剂元素的量将被引入非晶态 硅精确控制。 在设置在玻璃基板11上的非晶硅膜12的表面上形成抗蚀剂掩模21和含有催化剂元素如镍的水溶液14，例如乙酸盐溶液，其浓度控制在 向其中滴加10〜200ppm（需要调节）。 在将状态保持预定的时间之后，使用旋转器15对整个基板进行旋转干燥。 最终通过在550℃下进行热处理4小时来获得晶体硅薄膜。

公开(公告)号：US5654203A

公开(公告)日：1997-08-05

申请号：US479212

申请日：1995-06-07

申请人： Hisashi Ohtani ,  Hiroki Adachi ,  Akiharu Miyanaga ,  Toru Takayama

发明人： Hisashi Ohtani ,  Hiroki Adachi ,  Akiharu Miyanaga ,  Toru Takayama

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84

CPC分类号： H01L21/2022 ,  H01L27/1214 ,  H01L29/66757

摘要： In a method for crystallizing an amorphous silicon film by a heat treatment that is effected for a duration of about 4 hours at about 550.degree. C. using a catalyst element for accelerating the crystallization, the quantity of the catalyst element to be introduced into the amorphous silicon is precisely controlled. A resist mask 21 is formed on the surface of an amorphous silicon film 12 provided on a glass substrate 11, and an aqueous solution 14, e.g., an acetate solution, containing a catalyst element such as nickel at a concentration controlled in a range of from 10 to 200 ppm (need to be adjusted) is supplied dropwise thereto. After maintaining the state for a predetermined duration of time, the entire substrate is subjected to spin drying using a spinner 15. A thin film of crystalline silicon is finally obtained by applying heat treatment at 550.degree. C. for a duration of 4 hours.

摘要翻译： 在通过使用催化剂元素在约550℃下进行约4小时的热处理使非晶硅膜结晶的方法中，加入结晶的催化剂元素的量将被引入非晶态 硅精确控制。 在设置在玻璃基板11上的非晶硅膜12的表面上形成抗蚀剂掩模21和含有催化剂元素如镍的水溶液14，例如乙酸盐溶液，其浓度控制在 向其中滴加10〜200ppm（需要调节）。 在将状态保持预定的持续时间之后，使用旋转器15对整个基板进行旋转干燥。最后通过在550℃下进行热处理持续4小时来获得晶体硅薄膜。

公开(公告)号：US07943930B2

公开(公告)日：2011-05-17

申请号：US12143035

申请日：2008-06-20

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

IPC分类号： H01L29/04

CPC分类号： H01L29/045 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757

摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

摘要翻译： 在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。 该膜在低于玻璃基板的应变点的温度下结晶。 此外，形成栅极绝缘膜和栅电极。 杂质通过自对准过程引入。 然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。 另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。 首先，将该催化元件与非晶硅膜的表面接触。 将膜在450至650℃加热以产生晶核。 将膜进一步在较高温度下加热以生长晶粒。 以这种方式，形成具有改善的结晶度的晶体硅膜。

公开(公告)号：US07391051B2

公开(公告)日：2008-06-24

申请号：US11321640

申请日：2005-12-30

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

IPC分类号： H01L31/00

CPC分类号： H01L29/045 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757

摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

摘要翻译： 在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。 该膜在低于玻璃基板的应变点的温度下结晶。 此外，形成栅极绝缘膜和栅电极。 杂质通过自对准过程引入。 然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。 另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。 首先，将该催化元件与非晶硅膜的表面接触。 将膜在450至650℃加热以产生晶核。 将膜进一步在较高温度下加热以生长晶粒。 以这种方式，形成具有改善的结晶度的晶体硅膜。

公开(公告)号：US20060192202A1

公开(公告)日：2006-08-31

申请号：US11321640

申请日：2005-12-30

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

IPC分类号： H01L29/786

CPC分类号： H01L29/045 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757

摘要： In thin film transistors (TFTS) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

公开(公告)号：US06756657B1

公开(公告)日：2004-06-29

申请号：US09238579

申请日：1999-01-28

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani ,  Junichi Takeyama

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani ,  Junichi Takeyama

IPC分类号： H01L31036

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02675 ,  H01L21/2026 ,  H01L29/78675

摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.

摘要翻译： 公开了一种半导体器件。 半导体器件具有作为有源层区域的晶体硅膜。 结晶硅膜具有平行于衬底并具有（111）轴的晶体生长方向的针状或柱状晶体。 制备半导体器件的方法包括以下步骤：向非晶硅膜添加催化元素; 并在低温下加热含有催化元素的非晶硅膜以使硅膜结晶。

公开(公告)号：US6037610A

公开(公告)日：2000-03-14

申请号：US41516

申请日：1998-03-13

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

IPC分类号： H01L21/20 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L21/2022 ,  H01L29/78675

摘要： A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic [110] axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.

公开(公告)号：US06987283B2

公开(公告)日：2006-01-17

申请号：US10180015

申请日：2002-06-27

申请人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

发明人： Hongyong Zhang ,  Toru Takayama ,  Yasuhiko Takemura ,  Akiharu Miyanaga ,  Hisashi Ohtani

IPC分类号： H01L29/76

CPC分类号： H01L29/045 ,  G09G2300/0408 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757

摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

摘要翻译： 在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。 该膜在低于玻璃基板的应变点的温度下结晶。 此外，形成栅极绝缘膜和栅电极。 杂质通过自对准过程引入。 然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。 另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。 首先，将该催化元件与非晶硅膜的表面接触。 将膜在450至650℃加热以产生晶核。 将膜进一步在较高温度下加热以生长晶粒。 以这种方式，形成具有改善的结晶度的晶体硅膜。