公开(公告)号：US08487266B2

公开(公告)日：2013-07-16

申请号：US12984515

申请日：2011-01-04

申请人： Hisato Yabuta ,  Nobuyuki Kaji ,  Ryo Hayashi ,  Masatoshi Watanabe ,  Taihei Mukaide ,  Kazunori Fukuda

发明人： Hisato Yabuta ,  Nobuyuki Kaji ,  Ryo Hayashi ,  Masatoshi Watanabe ,  Taihei Mukaide ,  Kazunori Fukuda

IPC分类号： G01T1/24

CPC分类号： G01T1/2928 ,  H01L31/085

摘要： An X-ray detector includes an X-ray photoelectric conversion layer configured to produce electric charges in proportion to X-ray irradiation incident on the layer, a collecting electrode configured to collect the electric charges produced by the X-ray photoelectric conversion layer, a common electrode disposed on a surface of the X-ray photoelectric conversion layer opposite to the collecting electrode, a storage capacitor configured to store the electric charges collected by the collecting electrode, and a readout unit configured to read out the electric charges stored in the storage capacitor. A voltage is to be applied between the collecting electrode and the common electrode. The X-ray photoelectric conversion layer is formed of a polycrystalline oxide.

摘要翻译： X射线检测器包括：X射线光电转换层，被配置为与入射在该层上的X射线照射成比例地产生电荷;收集电极，被配置为收集由X射线光电转换层产生的电荷; 配置在与集电电极相反的X射线光电转换层的表面上的公共电极，配置为存储由集电极收集的电荷的存储电容器，以及读出单元，其被配置为读出存储在存储器中的电荷 电容器。 在集电极和公共电极之间施加电压。 X射线光电转换层由多晶氧化物形成。

公开(公告)号：US20110168905A1

公开(公告)日：2011-07-14

申请号：US12984515

申请日：2011-01-04

申请人： Hisato Yabuta ,  Nobuyuki Kaji ,  Ryo Hayashi ,  Masatoshi Watanabe ,  Taihei Mukaide ,  Kazunori Fukuda

发明人： Hisato Yabuta ,  Nobuyuki Kaji ,  Ryo Hayashi ,  Masatoshi Watanabe ,  Taihei Mukaide ,  Kazunori Fukuda

IPC分类号： G01T1/02 ,  H01L31/18

CPC分类号： G01T1/2928 ,  H01L31/085

摘要： An X-ray detector includes an X-ray photoelectric conversion layer configured to produce electric charges in proportion to X-ray irradiation incident on the layer, a collecting electrode configured to collect the electric charges produced by the X-ray photoelectric conversion layer, a common electrode disposed on a surface of the X-ray photoelectric conversion layer opposite to the collecting electrode, a storage capacitor configured to store the electric charges collected by the collecting electrode, and a readout unit configured to read out the electric charges stored in the storage capacitor. A voltage is to be applied between the collecting electrode and the common electrode. The X-ray photoelectric conversion layer is formed of a polycrystalline oxide.

摘要翻译： X射线检测器包括：X射线光电转换层，被配置为与入射在该层上的X射线照射成比例地产生电荷;收集电极，被配置为收集由X射线光电转换层产生的电荷; 配置在与集电电极相反的X射线光电转换层的表面上的公共电极，配置为存储由集电极收集的电荷的存储电容器，以及读出单元，被配置为读出存储在存储器中的电荷 电容器。 在集电极和公共电极之间施加电压。 X射线光电转换层由多晶氧化物形成。

公开(公告)号：US20120168750A1

公开(公告)日：2012-07-05

申请号：US13419417

申请日：2012-03-13

申请人： Ryo Hayashi ,  Nobuyuki Kaji ,  Hisato Yabuta

发明人： Ryo Hayashi ,  Nobuyuki Kaji ,  Hisato Yabuta

IPC分类号： H01L27/15 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/66969

摘要： Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

摘要翻译： 提供了一种底栅型薄膜晶体管，其包括：基板（1），栅电极（2），作为栅极绝缘膜的第一绝缘膜（3），作为沟道层的氧化物半导体层（4），第二 作为保护层的绝缘膜（5），源电极（6）和漏电极（7），其中氧化物半导体层（4）包括含有选自In，Zn 和Sn，并且第二绝缘膜（5）包括形成为与氧化物半导体层（4）接触的非晶形氧化物绝缘体，并且其中包含观察为氧的解吸气体的3.8×1019分子/ cm 3以上 通过温度程序解吸质谱。

公开(公告)号：US08148721B2

公开(公告)日：2012-04-03

申请号：US12515268

申请日：2007-11-20

申请人： Ryo Hayashi ,  Nobuyuki Kaji ,  Hisato Yabuta

发明人： Ryo Hayashi ,  Nobuyuki Kaji ,  Hisato Yabuta

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

摘要翻译： 提供了一种底栅型薄膜晶体管，其包括：基板（1），栅电极（2），作为栅极绝缘膜的第一绝缘膜（3），作为沟道层的氧化物半导体层（4），第二 作为保护层的绝缘膜（5），源电极（6）和漏电极（7），其中氧化物半导体层（4）包括含有选自In，Zn 和Sn，并且第二绝缘膜（5）包括形成为与氧化物半导体层（4）接触的非晶形氧化物绝缘体，并且其中包含观察为氧的解吸气体的3.8×1019分子/ cm 3以上 通过温度程序解吸质谱。

公开(公告)号：US20100203673A1

公开(公告)日：2010-08-12

申请号：US12671054

申请日：2008-09-25

申请人： Ryo Hayashi ,  Hisato Yabuta ,  Yoshinori Tateishi ,  Nobuyuki Kaji

发明人： Ryo Hayashi ,  Hisato Yabuta ,  Yoshinori Tateishi ,  Nobuyuki Kaji

IPC分类号： H01L21/34

CPC分类号： H01L29/78618 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

摘要： A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.

摘要翻译： 提供一种用于制造场效晶体管的方法。 场效应晶体管在基板上包括源电极，漏电极，氧化物半导体层，绝缘层和栅电极。 该方法包括：在氧化物半导体层上形成绝缘层之后，通过在含有水分的气氛中进行退火来提高氧化物半导体层的导电性的退火步骤。 退火步骤中的蒸汽压力高于退火温度下大气中的饱和蒸气压。

公开(公告)号：US09153703B2

公开(公告)日：2015-10-06

申请号：US12527622

申请日：2008-02-08

申请人： Nobuyuki Kaji ,  Ryo Hayashi ,  Hisato Yabuta ,  Katsumi Abe

发明人： Nobuyuki Kaji ,  Ryo Hayashi ,  Hisato Yabuta ,  Katsumi Abe

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L29/10

CPC分类号： H01L29/78696 ,  H01L29/105 ,  H01L29/7869

摘要： There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±15 nm.

摘要翻译： 提供了至少包括衬底，栅电极，栅极绝缘层，氧化物半导体层，源电极，漏电极和保护层的薄膜晶体管，其中氧化物半导体层是含有 元素In，Ga和Zn中的至少一种，氧化物半导体层的栅电极侧载流子密度高于其保护层侧载流子密度，氧化物半导体层的膜厚为30nm±15 nm。

公开(公告)号：US08110436B2

公开(公告)日：2012-02-07

申请号：US12671054

申请日：2008-09-25

申请人： Ryo Hayashi ,  Hisato Yabuta ,  Yoshinori Tateishi ,  Nobuyuki Kaji

发明人： Ryo Hayashi ,  Hisato Yabuta ,  Yoshinori Tateishi ,  Nobuyuki Kaji

IPC分类号： H01L21/00

CPC分类号： H01L29/78618 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

摘要： A method for manufacturing a field-effect transistor is provided. The field-effect transistor includes on a substrate a source electrode, a drain electrode, an oxide semiconductor layer, an insulating layer and a gate electrode. The method includes, after forming the insulating layer on the oxide semiconductor layer, an annealing step of increasing the electrical conductivity of the oxide semiconductor layers by annealing in an atmosphere containing moisture. The steam pressure at the annealing step is higher than the saturated vapor pressure in the atmosphere at the annealing temperature.

摘要翻译： 提供一种用于制造场效晶体管的方法。 场效应晶体管在基板上包括源电极，漏电极，氧化物半导体层，绝缘层和栅电极。 该方法包括：在氧化物半导体层上形成绝缘层之后，通过在含有水分的气氛中进行退火来提高氧化物半导体层的导电性的退火步骤。 退火步骤中的蒸汽压力高于退火温度下大气中的饱和蒸气压。

公开(公告)号：US20100051937A1

公开(公告)日：2010-03-04

申请号：US12527622

申请日：2008-02-08

申请人： Nobuyuki Kaji ,  Ryo Hayashi ,  Hisato Yabuta ,  Katsumi Abe

发明人： Nobuyuki Kaji ,  Ryo Hayashi ,  Hisato Yabuta ,  Katsumi Abe

IPC分类号： H01L29/786 ,  H01L33/00

CPC分类号： H01L29/78696 ,  H01L29/105 ,  H01L29/7869

摘要： There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm±15 nm.

摘要翻译： 提供了至少包括衬底，栅电极，栅极绝缘层，氧化物半导体层，源电极，漏电极和保护层的薄膜晶体管，其中氧化物半导体层是含有 元素In，Ga和Zn中的至少一种，氧化物半导体层的栅电极侧载流子密度高于其保护层侧载流子密度，氧化物半导体层的膜厚为30nm±15 nm。

公开(公告)号：US20120146021A1

公开(公告)日：2012-06-14

申请号：US13403536

申请日：2012-02-23

申请人： Hisato Yabuta ,  Ayanori Endo ,  Nobuyuki Kaji ,  Ryo Hayashi

发明人： Hisato Yabuta ,  Ayanori Endo ,  Nobuyuki Kaji ,  Ryo Hayashi

IPC分类号： H01L33/08

CPC分类号： H01L29/247 ,  H01L29/66969 ,  H01L29/78693

摘要： An amorphous oxide semiconductor contains at least one element selected from In, Ga, and Zn at an atomic ratio of InxGayZnz, wherein the density M of the amorphous oxide semiconductor is represented by the relational expression (1) below: M≧0.94×(7.121x+5.941y+5.675z)/(x+y+z)   (1) where 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≠0.

摘要翻译： 无定形氧化物半导体以In x Ga y Zn z的原子比含有选自In，Ga和Zn中的至少一种元素，其中非晶氧化物半导体的密度M由以下关系式（1）表示：M≥0.94×（7.121 x + 5.941y + 5.675z）/（x + y + z）（1）其中0＆nlE; x＆nlE; 1,0＆nlE; y＆nlE; 1,0和nlE; z＆nlE; 1和x + y + z≠0。

公开(公告)号：US20100051936A1

公开(公告)日：2010-03-04

申请号：US12515268

申请日：2007-11-20

申请人： Ryo Hayashi ,  Nobuyuki Kaji ,  Hisato Yabuta

发明人： Ryo Hayashi ,  Nobuyuki Kaji ,  Hisato Yabuta

IPC分类号： H01L33/00 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×1019 molecules/cm3 or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

摘要翻译： 提供了一种底栅型薄膜晶体管，其包括：基板（1），栅电极（2），作为栅极绝缘膜的第一绝缘膜（3），作为沟道层的氧化物半导体层（4），第二 作为保护层的绝缘膜（5），源电极（6）和漏电极（7），其中氧化物半导体层（4）包括含有选自In，Zn 和Sn，并且第二绝缘膜（5）包括形成为与氧化物半导体层（4）接触的非晶形氧化物绝缘体，并且其中包含观察为氧的解吸气体的3.8×1019分子/ cm 3以上 通过温度程序解吸质谱。