公开(公告)号：US20020097535A1

公开(公告)日：2002-07-25

申请号：US09911541

申请日：2001-07-25

Applicant: Hitachi, Ltd.

Inventor： Kenchi Ito ,  Jun Hayakawa

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

Abstract: A magnetoresistive head which has a high low resistance and a high MR ratio at room temperature and a S/N ratio that does not decrease sharply upon application of a bias voltage. The magnetoresistive head comprises a soft magnetic free layer, a non-magnetic insulating layer, and a ferromagnetic pinned layer. The ferromagnetic pinned layer may have a spin valve layer whose magnetization is fixed with respect to the magnetic field to be detected, and the soft magnetic free layer permits its magnetization to rotate in response to an external magnetic field, thereby changing the relative angle with the magnetization of said ferromagnetic pinned layer and producing the magnetoresistive effect. The absolute value of the magnetoresistive effect has a peak at a temperature in the range from about 0null C. to 60null C. and for a bias voltage Vs (applied across said ferromagnetic pinned layer and said soft magnetic free layer) in the range from null0.2 to null0.8 V and from null0.8 to null0.2 V. The above characteristics may be achieved if the ferromagnetic pinned layer is formed from Fe3O4 or at least one oxide or compound of Cr and Mn; the non-magnetic insulating layer is formed from at least one oxide of Sr, Ti, and Ta; or the soft magnetic free layer is a CoFe alloy containing 70-100 atom % of Co, the ferromagnetic pinned layer is a CoFe alloy containing 0-70 atom % of Co, and the non-magnetic insulating layer is formed from at least one oxide of Sr, Ti, and Ta.

Abstract translation: 在室温下具有高低电阻和高MR比的磁阻磁头，并且在施加偏置电压时S / N比不会急剧下降。 磁阻头包括软磁性自由层，非磁性绝缘层和铁磁性钉扎层。 铁磁性钉扎层可以具有相对于要检测的磁场固定的自旋阀层，并且软磁自由层允许其磁化响应于外部磁场而旋转，从而与 所述铁磁性钉扎层的磁化和产生磁阻效应。 磁阻效应的绝对值在约0℃至60℃的温度范围内具有峰值，并且对于偏置电压Vs（施加在所述铁磁性被钉扎层和所述软磁性自由层上），在该范围内 从+0.2至+0.8V和-0.8至-0.2V。如果铁磁性钉扎层由Fe 3 O 4或至少一种氧化物或Cr和Mn的化合物形成，则可以实现上述特征; 非磁性绝缘层由Sr，Ti和Ta的至少一种氧化物形成; 或软磁性层为含有70〜100原子％Co的CoFe合金，铁磁性被钉扎层为含有0〜70原子％Co的CoFe合金，非磁性绝缘层由至少一种氧化物 的Sr，Ti和Ta。

公开(公告)号：US20040136120A1

公开(公告)日：2004-07-15

申请号：US10374089

申请日：2003-02-27

Applicant: Hitachi, Ltd.

Inventor： Jun Hayakawa ,  Kenchi Ito

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909

Abstract: A three terminal magnetoresistance head capable of providing a high output and a large output current is provided. A MIS junction multilayer film composed of a magnetic semiconductor, a metal magnetic multilayer film, and a tunnel magnetoresistance element is applied to a three terminal magnetoresistance device.

Abstract translation: 提供能够提供高输出和大输出电流的三端子磁阻头。 将由磁性半导体，金属磁性多层膜和隧道磁阻元件构成的MIS结多层膜应用于三端子磁阻器件。

公开(公告)号：US20040047079A1

公开(公告)日：2004-03-11

申请号：US10648344

申请日：2003-08-27

Applicant: Hitachi, Ltd.

Inventor： Kenchi Ito ,  Yoshiaki Kawato ,  Masafumi Mochizuki

IPC: G11B005/39

CPC classification number: G11B5/012 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/4886 ,  G11B2005/0029 ,  Y10T29/49052

Abstract: The invention provides a magnetic head for perpendicular recording capable of recording with high linear recording density and high track density, and a magnetic disk drive incorporating the same. In order to achieve this, one or more sides of the main pole of the magnetic head for perpendicular recording except for the trailing side are formed in a taper with an appropriate angle against the tip surface of the main pole, and the yoke whose widest principal plane is in parallel to the tip surface is provided on the bottom of the main pole. Thereby, the invention achieves the magnetic head for perpendicular recording that generates a sufficiently high magnetic field, and assumes a sharp gradient of magnetic field on the trailing side. By incorporating this magnetic head, a magnetic disk drive capable of handling high linear recording density can be produced.

Abstract translation: 本发明提供一种用于能够以高线性记录密度和高轨道密度进行记录的垂直记录磁头和包含该磁头的磁盘驱动器。 为了实现这一点，用于垂直记录的磁头的主极的除了后侧之外的一个或多个侧面以相对于主极的尖端表面具有适当角度的锥形形成，并且最主要的轭 平面与顶表面平行设置在主极的底部。 因此，本发明实现了用于垂直记录的磁头，其产生足够高的磁场，并且在后侧呈现尖锐的磁场梯度。 通过并入该磁头，可以产生能够处理高线性记录密度的磁盘驱动器。

公开(公告)号：US20040061984A1

公开(公告)日：2004-04-01

申请号：US10677290

申请日：2003-10-03

Applicant: Hitachi, Ltd.

Inventor： Kenchi Ito ,  Jun Hayakawa

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B2005/3996

Abstract: A magnetoresistive head which has a high low resistance and a high MR ratio at room temperature and a S/N ratio that does not decrease sharply upon application of a bias voltage. The magnetoresistive head comprises a soft magnetic free layer, a non-magnetic insulating layer, and a ferromagnetic pinned layer. The ferromagnetic pinned layer may have a spin valve layer whose magnetization is fixed with respect to the magnetic field to be detected, and the soft magnetic free layer permits its magnetization to rotate in response to an external magnetic field, thereby changing the relative angle with the magnetization of said ferromagnetic pinned layer and producing the magnetoresistive effect. The absolute value of the magnetoresistive effect has a peak at a temperature in the range from about 0null C. to 60null C. and for a bias voltage Vs (applied across said ferromagnetic pinned layer and said soft magnetic free layer) in the range from null0.2 to null0.8 V and from null0.8 to null0.2 V. The above characteristics may be achieved if the ferromagnetic pinned layer is formed from Fe3O4 or at least one oxide or compound of Cr and Mn; the non-magnetic insulating layer is formed from at least one oxide of Sr, Ti, and Ta; or the soft magnetic free layer is a CoFe alloy containing 70-100 atom % of Co, the ferromagnetic pinned layer is a CoFe alloy containing 0-70 atom % of Co, and the non-magnetic insulating layer is formed from at least one oxide of Sr, Ti, and Ta.

Abstract translation: 在室温下具有高低电阻和高MR比的磁阻磁头，并且在施加偏置电压时S / N比不会急剧下降。 磁阻头包括软磁性自由层，非磁性绝缘层和铁磁性钉扎层。 铁磁性钉扎层可以具有相对于要检测的磁场固定的自旋阀层，并且软磁自由层允许其磁化响应于外部磁场而旋转，从而与 所述铁磁性钉扎层的磁化和产生磁阻效应。 磁阻效应的绝对值在约0℃至60℃的温度范围内具有峰值，并且对于偏置电压Vs（施加在所述铁磁性被钉扎层和所述软磁性自由层上），在该范围内 从+0.2至+0.8V和-0.8至-0.2V。如果铁磁性钉扎层由Fe 3 O 4或至少一种氧化物或Cr和Mn的化合物形成，则可以实现上述特征; 非磁性绝缘层由Sr，Ti和Ta的至少一种氧化物形成; 或软磁性层为含有70〜100原子％Co的CoFe合金，铁磁性被钉扎层为含有0〜70原子％Co的CoFe合金，非磁性绝缘层由至少一种氧化物 的Sr，Ti和Ta。

公开(公告)号：US20030173628A1

公开(公告)日：2003-09-18

申请号：US10412423

申请日：2003-04-14

Applicant: Hitachi, Ltd.

Inventor： Takeshi Sakata ,  Satoru Hanzawa ,  Hideyuki Matsuoka ,  Katsuro Watanabe ,  Kenchi Ito

IPC: H01L029/76 ,  H01L031/062

CPC classification number: H01L27/226 ,  B82Y10/00 ,  G11C11/16

Abstract: Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresistance of a magnetic tunnel junction (MTJ) element with a high S/N ratio. Each memory cell includes an MTJ element and a bipolar transistor. The read-out operation is carried out by selecting a word line, amplifying a current flowing in the MTJ element of a target memory cell by the bipolar transistor and outputting the-amplified current to an associated read data line.

Abstract translation: 公开了一种快速，高度集成和高可靠性的磁阻随机存取存储器（MRAM）和使用MRAM的半导体器件。 半导体器件使用存储单元执行MRAM的读出操作，用于通过使用具有高S / N比的磁性隧道结（MTJ）元件的磁阻的变化来存储信息。 每个存储单元包括MTJ元件和双极晶体管。 通过选择字线，通过双极晶体管放大在目标存储单元的MTJ元件中流动的电流并将放大的电流输出到相关联的读取数据线来执行读出操作。

公开(公告)号：US20040223368A1

公开(公告)日：2004-11-11

申请号：US10863748

申请日：2004-06-09

Applicant: Hitachi, Ltd.

Inventor： Takeshi Sakata ,  Satoru Hanzawa ,  Hideyuki Matsuoka ,  Katsuro Watanabe ,  Kenchi Ito

IPC: G11C011/22

CPC classification number: H01L27/226 ,  B82Y10/00 ,  G11C11/16

Abstract: Disclosed are a fast, highly-integrated and highly-reliable magnetoresistive random access memory (MRAM) and a semiconductor device which uses the MRAM. The semiconductor device performs the read-out operation of the MRAM using memory cells for storing information by using a change in magnetoresistance of a magnetic tunnel junction (MTJ) element with a high S/N ratio. Each memory cell includes an MTJ element and a bipolar transistor. The read-out operation is carried out by selecting a word line, amplifying a current flowing in the MTJ element of a target memory cell by the bipolar transistor and outputting the amplified current to an associated read data line.

Abstract translation: 公开了一种快速，高度集成和高可靠性的磁阻随机存取存储器（MRAM）和使用MRAM的半导体器件。 半导体器件使用存储单元执行MRAM的读出操作，用于通过使用具有高S / N比的磁性隧道结（MTJ）元件的磁阻的变化来存储信息。 每个存储单元包括MTJ元件和双极晶体管。 通过选择字线，通过双极晶体管放大在目标存储单元的MTJ元件中流动的电流并将放大的电流输出到相关联的读取数据线来执行读出操作。

公开(公告)号：US20010040864A1

公开(公告)日：2001-11-15

申请号：US09912353

申请日：2001-07-26

Applicant: Hitachi, Ltd.

Inventor： Sumio Hosaka ,  Hajime Koyanagi ,  Atsushi Kikukawa ,  Kenchi Ito ,  Kimitoshi Etoh

IPC: G11B007/24

CPC classification number: G11B5/00 ,  B82Y10/00 ,  G11B5/82 ,  G11B7/007 ,  G11B7/24085 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1418 ,  G11B9/1454 ,  G11B9/1472 ,  G11B9/1481 ,  G11B11/10578 ,  G11B23/0057 ,  Y10S977/862 ,  Y10S977/876 ,  Y10S977/932

Abstract: A recording disk has a surface provided with guide grooves for controlling the position of a recording head, and recording bits formed in the guide grooves for high-density recording. The recording bits have the shape of a tadpole in a plane. The width Ws of the recording bits is greater than the width Wg of the guide grooves. An AFM probe serving as a recording head travels along the guide grooves without running off the guide grooves. When a tip part of the AFM probe coincides with the recording bit, the tip part drops deep into the guide groove, whereby the recording bit is detected.

Abstract translation: 记录盘具有设置有用于控制记录头的位置的引导槽的表面，以及形成在引导槽中的记录位以进行高密度记录。 记录位在平面中具有ad the的形状。 记录位的宽度Ws大于引导槽的宽度Wg。 作为记录头的AFM探头沿引导槽行进，而不会脱离导槽。 当AFM探头的尖端部分与记录位重合时，尖端部分深入导槽，从而检测记录位。