CLEANING METHOD OF FILM LAYER IN THE PLASMA PROCESSING APPARATUS

    公开(公告)号:US20240203708A1

    公开(公告)日:2024-06-20

    申请号:US17802639

    申请日:2021-08-23

    CPC classification number: H01J37/32862 B08B3/12 H01J37/32495 H01J2237/3151

    Abstract: A cleaning method of a protective film for a plasma processing apparatus, the protective film being formed on a surface of a base material disposed inside a processing chamber of the plasma processing apparatus for processing a wafer using plasma, and containing a material having resistance to the plasma, and the cleaning method includes: (a) a step of preparing the base material including the film containing yttrium on the surface; and (b) a step of cleaning performed by immersing the base material in a dilute nitric acid solution and performing ultrasonic irradiation on the film, in which in the step (b), an elution rate of yttrium is detected in the cleaning, and the cleaning is stopped after the elution rate of yttrium after a start of the ultrasonic irradiation sequentially goes through a first decrease, a first increase, and a second decrease and before a second increase occurs.

    Diagnostic System
    3.
    发明申请

    公开(公告)号:US20230095532A1

    公开(公告)日:2023-03-30

    申请号:US17907921

    申请日:2020-03-30

    Abstract: The present disclosure proposes a diagnostic system capable of properly identifying the cause of even an error for which multiple factors or multiple compound factors may be accountable. The diagnostic system according to the present disclosure is provided with a learning device for learning at least one of a recipe defining operations of an inspection device, log data describing states of the device, or specimen data describing characteristics of a specimen in association with error types of the device, and estimates the cause of the error by using the learning device (refer to FIG. 4).

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