公开(公告)号：US20240014002A1

公开(公告)日：2024-01-11

申请号：US18200232

申请日：2023-05-22

Applicant: Hitachi High-Tech Corporation

Inventor： Takayasu IWATSUKA ,  Hideto DOHI ,  Tomoyo SASAKI ,  Wen LI

IPC: H01J37/244 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/244 ,  H01J37/1475 ,  H01J37/28 ,  H01J2237/2448 ,  H01J2237/24521 ,  H01J2237/24455

Abstract: The charged particle beam apparatus includes a charged particle source generating a charged particle beam, a deflector deflecting the charged particle beam, a detector detecting secondary electrons emitted from an irradiation target in response to irradiation with the charged particle beam, and a processor system. The processor system (A) acquires a first time-series change in secondary electron detection-related quantity by repeatedly performing the following (A1) and (A2), (A1) directly or indirectly, maintains or changes the control amount applied to the deflector to a first control amount, and (A2) acquires the secondary electron detection-related quantity based on an output from the detector, and (B) acquires a time-series change in variation of the beam diameter of the charged particle beam based on the first time-series change.