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公开(公告)号:US12051563B2
公开(公告)日:2024-07-30
申请号:US17637328
申请日:2019-09-04
Applicant: Hitachi High-Tech Corporation
Inventor: Ryo Komatsuzaki , Hiroyuki Chiba , Wei Chean Tan , Hirofumi Satou
IPC: H01J37/24 , H01J37/244 , H01J37/28
CPC classification number: H01J37/244 , H01J37/28 , H01J2237/2448
Abstract: A charged particle beam device 100 includes an irradiation unit 110 configured to irradiate a sample S with a charged particle beam, a detection unit 130 configured to output a signal caused by irradiating the sample S with the charged particle beam, a display unit 154 configured to output a condition selection interface for selecting one condition set from a plurality of condition sets, and a control unit 151 configured to execute an evaluation on an object of interest. The condition set includes information for specifying one learned model from a plurality of learned models, information for specifying one search condition from a plurality of search conditions including at least one of an irradiation condition and a detection condition, and information for specifying one analysis condition from a plurality of analysis conditions defining an operation of at least one of the irradiation unit 110 and the detection unit 130. The charged particle beam device 100 is configured to accept a selection of the condition set via the condition selection interface, irradiate a first region of the sample S with the charged particle beam based on the specified search condition and detect a first signal caused by the irradiation, transfer information that is based on the first signal to the specified learned model, acquire information that represents a second region of the sample S including a position of a candidate of the object of interest from the specified learned model, the second region being a part of the first region and smaller than the first region, irradiate the second region with the charged particle beam based on the specified analysis condition and detect a second signal caused by the irradiation, and input information that is based on the second signal to the control unit 151.
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公开(公告)号:US11747292B2
公开(公告)日:2023-09-05
申请号:US17287246
申请日:2019-03-20
Applicant: Hitachi High-Tech Corporation
Inventor: Wei Chean Tan , Hiroyuki Chiba
CPC classification number: G01N23/2251 , G06T5/002 , G06T5/50 , H04N7/181 , H04N23/56 , H04N23/74 , H04N23/90 , G01N2223/07 , G01N2223/418 , G01N2223/507 , G06T2207/10061 , G06T2207/20221
Abstract: The charged particle beam apparatus includes a charged particle beam optical system that irradiates a sample mounted on a sample stage with a charged particle beam; a detector that detects a signal generated from the sample; a charged particle beam imaging device that acquires an observation image from the signal detected by the detector; an optical imaging device that captures an optical image of the sample; a stage that rotatably holds the sample stage; a stage control device that controls movement and rotation of the stage; and an image composition unit that combines the plurality of optical images to generate a composite image. The stage control device is configured to move the stage so that the center of an imaging range of the optical imaging device is located at a position different from the rotation center of the stage and then, to rotate the stage, the optical imaging device acquires a plurality of optical images relating to different positions of the sample by rotation operation, and the image composition unit combines the plurality of optical images obtained by the rotation operation to generate a composite image.
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公开(公告)号:US12169182B2
公开(公告)日:2024-12-17
申请号:US18224182
申请日:2023-07-20
Applicant: Hitachi High-Tech Corporation
Inventor: Wei Chean Tan , Hiroyuki Chiba
Abstract: A charged particle beam apparatus includes a charged particle beam optical system that irradiates a sample on a sample stage with a charged particle beam; a detector that detects a signal generated from the sample; a charged particle beam imaging device that acquires an observation image from the signal; an optical imaging device that captures an optical image of the sample; a stage that rotatably holds the sample stage; a stage control device that controls movement and rotation of the stage; and an image composition unit that combines a plurality of optical images. The stage is moved so that the center of an imaging range of the optical imaging device is located at a position different from the rotation center of the stage, and then rotated. A plurality of optical images relating to different positions of the sample by rotation operation are acquired and combined to generate the composite image.
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公开(公告)号:US12046446B2
公开(公告)日:2024-07-23
申请号:US17640279
申请日:2019-09-04
Applicant: Hitachi High-Tech Corporation
Inventor: Hiroyuki Chiba , Wei Chean Tan , Ryo Komatsuzaki , Hirofumi Sato
IPC: H01J37/22 , G06T7/70 , G06V10/22 , G06V10/24 , G06V10/774 , H01J37/244 , H01J37/28
CPC classification number: H01J37/222 , G06T7/70 , G06V10/22 , G06V10/245 , G06V10/774 , H01J37/244 , H01J37/28 , G06T2207/10061 , G06T2207/20081 , H01J2237/221 , H01J2237/24578 , H01J2237/2814
Abstract: A charged particle beam device 100 includes: an irradiation unit 110 configured to irradiate a sample S with a charged particle beam; a particle detection unit 130 configured to detect a particle caused by the irradiation of the sample with the charged particle beam; and a control unit 151 configured to generate an image of the sample based on an output from the particle detection unit, wherein the control unit 151 inputs the image of the sample S into models M1 and M2 for detecting a first structure 401 and a second structure 402, acquires a first detection result related to the first structure 401 and a second detection result related to the second structure 402 from the models M1 and M2, determines locations or regions of the first structure 401 and the second structure 402 based on the first detection result and the second detection result, and outputs an integration result image 203 representing the location or the region of the first structure 401 and the location or the region of the second structure 402.
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