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公开(公告)号：US5997620A
公开(公告)日：1999-12-07
申请号：US200892
申请日：1998-11-27
申请人： Hitoshi Kodama , Hideki Otake , Keigo Ohashi
发明人： Hitoshi Kodama , Hideki Otake , Keigo Ohashi
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , G11B5/84 , H01L21/304 , B24B1/00 , H01L21/8229 , H01L21/8239
CPC分类号： G11B5/8404 , C09G1/02 , C09K3/1463
摘要： A polishing composition for polishing a memory hard disk comprising water and at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, which further contains an iron compound dissolved in the composition, said iron compound being selected from the group consisting of iron(III) nitrate, iron(III) sulfate, ammonium iron(III) sulfate, iron(III) perchlorate and an ion salt of an organic acid.
摘要翻译： 一种用于抛光含有水和至少一种选自二氧化硅，氧化铝，氧化铈，氧化锆，氧化钛，氮化硅和二氧化锰的磨料的存储硬盘的抛光组合物，其还含有溶解的铁化合物 所述铁化合物选自硝酸铁（III），硫酸铁（III），硫酸铵铁（III），高氯酸铁（III）和有机酸的离子盐。
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公开(公告)号：US06190443B1
公开(公告)日：2001-02-20
申请号：US09386292
申请日：1999-08-31
申请人： Keigo Ohashi , Hitoshi Kodama , Noritaka Yokomichi
发明人： Keigo Ohashi , Hitoshi Kodama , Noritaka Yokomichi
IPC分类号： B24B100
CPC分类号： G11B5/8404 , C09G1/02 , C09K3/1463
摘要： A polishing composition for polishing a memory hard disk, which comprises water and at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide and which further contains an iron chelate complex dissolved in the composition, the iron chelate complex having a nitrogen-containing compound as a ligand, and the pH of the entire composition being from 6 to 10.
摘要翻译： 一种用于抛光存储硬盘的抛光组合物，其包括水和选自二氧化硅，氧化铝，氧化铈，氧化锆，氧化钛，氮化硅和二氧化锰中的至少一种研磨剂，并且还含有铁 溶解在组合物中的螯合络合物，具有含氮化合物作为配体的铁螯合络合物，并且整个组合物的pH为6至10。
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公开(公告)号：US20110183581A1
公开(公告)日：2011-07-28
申请号：US12999475
申请日：2009-06-15
申请人： Taira Otsu , Keigo Ohashi
发明人： Taira Otsu , Keigo Ohashi
CPC分类号： G11B5/8404 , B24B37/044 , C03C19/00 , C09G1/02 , C09K3/1463
摘要： There is provided a polishing composition, containing abrasive grains and an acid represented either by R2—R1—SO3H (wherein R1 is a linear alkylene or hydroxyalkylene group having 1 to 4 carbon atoms, and R2 is a hydroxy group, a carboxy group, or a sulfonic acid group when R1 is the linear alkylene group, or R2 is a carboxy group or a hydroxymethyl group when R1 is the linear hydroxyalkylene group), or by C6H5—R3 (wherein R3 is a sulfonic acid group or a phosphonic acid group). The acid contained in the polishing composition is preferably isethionic acid or benzenesulfonic acid. The polishing composition is mainly used in the application of polishing silicon oxide materials including glass substrates for hard disks, synthetic quartz substrates for photomasks, and low-dielectric-constant films such as silicon dioxide films, BPSG films, PSG films, FSG films, and organosiloxane films of semiconductor devices.
摘要翻译： 提供一种抛光组合物，其含有磨粒和由R2-R1-SO3H表示的酸（其中R1是具有1-4个碳原子的直链亚烷基或羟基亚烷基，R2是羟基，羧基或 当R 1为直链亚烷基时为磺酸基，或当R 1为直链羟基亚烷基时，R 2为羧基或羟甲基）或C 6 H 5 -R 3（其中R 3为磺酸基或膦酸基） 。 抛光组合物中所含的酸优选为羟乙磺酸或苯磺酸。 抛光组合物主要用于抛光氧化硅材料的应用，包括用于硬盘的玻璃基板，用于光掩模的合成石英基板和诸如二氧化硅膜，BPSG膜，PSG膜，FSG膜和低介电常数膜的低介电常数膜。 半导体器件的有机硅氧烷膜。
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公开(公告)号：US20050136803A1
公开(公告)日：2005-06-23
申请号：US10980446
申请日：2004-11-03
申请人： Keigo Ohashi , Toshiki Owaki
发明人： Keigo Ohashi , Toshiki Owaki
CPC分类号： G11B5/8404 , C03C19/00
摘要： A polishing composition of the present invention contains silicon dioxide, an acid, and water. Silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The acid is, for example, hydrochloric acid, phosphoric acid, sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, boric acid, acetic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid, gluconic acid, alanine, glycin, lactic acid, hydroxyethylidene diphosphonic acid, nitrilotris(methylene phosphonic acid), or phosphonobutane tricarboxylic acid. The pH of the polishing composition is preferably in the range of 0.5 to 6. The polishing composition can be suitably used in applications for polishing a glass substrate.
摘要翻译： 本发明的抛光组合物含有二氧化硅，酸和水。 二氧化硅是例如胶体二氧化硅，热解二氧化硅或沉淀二氧化硅。 酸是例如盐酸，磷酸，硫酸，膦酸，硝酸，次膦酸，硼酸，乙酸，衣康酸，琥珀酸，酒石酸，柠檬酸，马来酸，乙醇酸，丙二酸 酸，甲磺酸，甲酸，苹果酸，葡萄糖酸，丙氨酸，甘氨酸，乳酸，羟基亚乙基二膦酸，次氮基三（亚甲基膦酸）或膦酰基丁烷三羧酸。 抛光组合物的pH优选在0.5至6的范围内。该抛光组合物可适用于玻璃基底的研磨用途。
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公开(公告)号：US20050148291A1
公开(公告)日：2005-07-07
申请号：US10996782
申请日：2004-11-24
申请人： Keigo Ohashi , Toshiki Owaki
发明人： Keigo Ohashi , Toshiki Owaki
CPC分类号： G11B5/8404 , B24B37/044 , C09G1/02
摘要： A polishing composition contains silicon dioxide, an alkaline compound, and water. Silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The alkaline compound is, for example, ammonium carbonate, potassium carbonate, sodium carbonate, ammonium hydrogen carbonate, potassium hydrogen carbonate, sodium hydrogen carbonate, ammonium phosphate, potassium phosphate, sodium phosphate, ammonium hydrogen phosphate, potassium hydrogen phosphate, or sodium hydrogen phosphate. The polishing composition can be suitably used in applications for polishing a glass substrate.
摘要翻译： 抛光组合物含有二氧化硅，碱性化合物和水。 二氧化硅是例如胶体二氧化硅，热解二氧化硅或沉淀二氧化硅。 碱性化合物是例如碳酸铵，碳酸钾，碳酸钠，碳酸氢铵，碳酸氢钾，碳酸氢钠，磷酸铵，磷酸钾，磷酸钠，磷酸氢铵，磷酸氢钾或磷酸氢钠 。 抛光组合物可以适用于玻璃基板的研磨用途。
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公开(公告)号：US06309434B1
公开(公告)日：2001-10-30
申请号：US09656756
申请日：2000-09-07
申请人： Keigo Ohashi
发明人： Keigo Ohashi
IPC分类号： C09G102
CPC分类号： C09K3/1463 , C09G1/02 , G11B5/8404
摘要： A polishing composition for a magnetic disk substrate to be used for a memory hard disk, which comprises: (a) colloidal silica as an abrasive in an amount within a range of from 0.1 to 35 wt % based on the total weight of the composition; (b) iron nitrate as a polishing accelerator in an amount within a range of from 0.04 to 2.2 wt % based on the total weight of the composition; (c) citric acid as a stabilizer in an amount within a range of from 0.4 to 22 wt % based on the total weight of the composition; (d) hydrogen peroxide as a polishing acceleration assistant in an amount within a range of from 0.155 to 9.3 wt % based on the total weight of the composition; and (e) water.
摘要翻译： 一种用于存储硬盘的磁盘基材用抛光组合物，其包括：（a）基于组合物总重量的0.1至35重量％范围内的磨料的胶态二氧化硅; （b）作为抛光促进剂的硝酸铁的量为组合物总重量的0.04至2.2重量％;（c）作为稳定剂的柠檬酸的量为0.4至22 基于组合物的总重量的wt％;（d）作为抛光加速助剂的过氧化氢，其量为组合物总重量的0.155至9.3重量％; 和（e）水。
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公开(公告)号：US08827771B2
公开(公告)日：2014-09-09
申请号：US12999475
申请日：2009-06-15
申请人： Taira Otsu , Keigo Ohashi
发明人： Taira Otsu , Keigo Ohashi
IPC分类号： B24B7/22
CPC分类号： G11B5/8404 , B24B37/044 , C03C19/00 , C09G1/02 , C09K3/1463
摘要： There is provided a polishing composition, containing abrasive grains and an acid represented either by R2—R1—SO3H (wherein R1 is a linear alkylene or hydroxyalkylene group having 1 to 4 carbon atoms, and R2 is a hydroxy group, a carboxy group, or a sulfonic acid group when R1 is the linear alkylene group, or R2 is a carboxy group or a hydroxymethyl group when R1 is the linear hydroxyalkylene group), or by C6H5—R3 (wherein R3 is a sulfonic acid group or a phosphonic acid group). The acid contained in the polishing composition is preferably isethionic acid or benzenesulfonic acid. The polishing composition is mainly used in the application of polishing silicon oxide materials including glass substrates for hard disks, synthetic quartz substrates for photomasks, and low-dielectric-constant films such as silicon dioxide films, BPSG films, PSG films, FSG films, and organosiloxane films of semiconductor devices.
摘要翻译： 提供一种抛光组合物，其含有磨粒和由R2-R1-SO3H表示的酸（其中R1是具有1-4个碳原子的直链亚烷基或羟基亚烷基，R2是羟基，羧基或 当R 1为直链亚烷基时为磺酸基，或当R 1为直链羟基亚烷基时，R 2为羧基或羟甲基）或C 6 H 5 -R 3（其中R 3为磺酸基或膦酸基） 。 抛光组合物中所含的酸优选为羟乙磺酸或苯磺酸。 抛光组合物主要用于抛光氧化硅材料的应用，包括用于硬盘的玻璃基板，用于光掩模的合成石英基板和诸如二氧化硅膜，BPSG膜，PSG膜，FSG膜和低介电常数膜的低介电常数膜。 半导体器件的有机硅氧烷膜。
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公开(公告)号：US20070004323A1
公开(公告)日：2007-01-04
申请号：US11516131
申请日：2006-09-06
申请人： Keigo Ohashi , Toshiki Owaki
发明人： Keigo Ohashi , Toshiki Owaki
CPC分类号： G11B5/8404 , C03C19/00
摘要： A polishing composition of the present invention contains silicon dioxide, an acid, and water. Silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The acid is, for example, hydrochloric acid, phosphoric acid, sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, boric acid, acetic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid, gluconic acid, alanine, glycin, lactic acid, hydroxyethylidene diphosphonic acid, nitrilotris(methylene phosphonic acid), or phosphonobutane tricarboxylic acid. The pH of the polishing composition is preferably in the range of 0.5 to 6. The polishing composition can be suitably used in applications for polishing a glass substrate.
摘要翻译： 本发明的抛光组合物含有二氧化硅，酸和水。 二氧化硅是例如胶体二氧化硅，热解二氧化硅或沉淀二氧化硅。 酸是例如盐酸，磷酸，硫酸，膦酸，硝酸，次膦酸，硼酸，乙酸，衣康酸，琥珀酸，酒石酸，柠檬酸，马来酸，乙醇酸，丙二酸 酸，甲磺酸，甲酸，苹果酸，葡萄糖酸，丙氨酸，甘氨酸，乳酸，羟基亚乙基二膦酸，次氮基三（亚甲基膦酸）或膦酰基丁烷三羧酸。 抛光组合物的pH优选在0.5至6的范围内。该抛光组合物可适用于玻璃基底的研磨用途。
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公开(公告)号：US20070004322A1
公开(公告)日：2007-01-04
申请号：US11516000
申请日：2006-09-05
申请人： Keigo Ohashi , Toshiki Owaki
发明人： Keigo Ohashi , Toshiki Owaki
CPC分类号： G11B5/8404 , B24B37/044 , C09G1/02
摘要： A polishing composition contains silicon dioxide, an alkaline compound, and water. Silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The alkaline compound is, for example, ammonium carbonate, potassium carbonate, sodium carbonate, ammonium hydrogen carbonate, potassium hydrogen carbonate, sodium hydrogen carbonate, ammonium phosphate, potassium phosphate, sodium phosphate, ammonium hydrogen phosphate, potassium hydrogen phosphate, or sodium hydrogen phosphate. The polishing composition can be suitably used in applications for polishing a glass substrate.
摘要翻译： 抛光组合物含有二氧化硅，碱性化合物和水。 二氧化硅是例如胶体二氧化硅，热解二氧化硅或沉淀二氧化硅。 碱性化合物是例如碳酸铵，碳酸钾，碳酸钠，碳酸氢铵，碳酸氢钾，碳酸氢钠，磷酸铵，磷酸钾，磷酸钠，磷酸氢铵，磷酸氢钾或磷酸氢钠 。 抛光组合物可以适用于玻璃基板的研磨用途。
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