公开(公告)号：US08426880B2

公开(公告)日：2013-04-23

申请号：US12155877

申请日：2008-06-11

申请人： Ho Young Song ,  Dong Yu Kim ,  Jeong Woo Park ,  Yong Chun Kim ,  Hyung Ky Back

发明人： Ho Young Song ,  Dong Yu Kim ,  Jeong Woo Park ,  Yong Chun Kim ,  Hyung Ky Back

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/16 ,  H01L33/22

摘要： There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.

公开(公告)号：US20090001398A1

公开(公告)日：2009-01-01

申请号：US12155877

申请日：2008-06-11

申请人： Ho Young Song ,  Dong Yu Kim ,  Jeong Woo Park ,  Yong Chun Kim ,  Hyung Ky Back

发明人： Ho Young Song ,  Dong Yu Kim ,  Jeong Woo Park ,  Yong Chun Kim ,  Hyung Ky Back

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/16 ,  H01L33/22

摘要： There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.

摘要翻译： 提供了可以通过简单的工艺制造并且具有优异的光提取效率的半导体发光器件和制造具有高再现性和高生产量的半导体发光器件的方法。 根据本发明的一个方面，具有基板和叠层体的半导体发光器件依次层叠在基板上，其中第一导电型半导体层，有源层和第二导电类型半导体层包括二氧化硅颗粒层; 以及形成在二氧化硅粒子层的下部的不平坦部。

公开(公告)号：US08865515B2

公开(公告)日：2014-10-21

申请号：US13356965

申请日：2012-01-24

申请人： Seok In Na ,  Dong Yu Kim ,  Hye Young Koo ,  Jin Mun Yun ,  Jun Seok Yeo ,  Jun Kyung Kim

发明人： Seok In Na ,  Dong Yu Kim ,  Hye Young Koo ,  Jin Mun Yun ,  Jun Seok Yeo ,  Jun Kyung Kim

IPC分类号： H01L51/40 ,  B82Y10/00 ,  C01B31/04 ,  B82Y40/00 ,  B82Y30/00 ,  H01L51/00 ,  H01L51/44 ,  H01L51/52 ,  H01L51/50

CPC分类号： H01L51/0045 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/192 ,  H01L51/44 ,  H01L51/442 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5206 ,  Y02E10/549 ,  Y02P70/521

摘要： A method for fabricating a graphene thin film by reducing graphene oxide and a method for fabricating an optoelectronic device using the same are provided. The method for fabricating a graphene thin film includes preparing graphene oxide; preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and fabricating a graphene thin film by applying the graphene dispersed solution. The sulfonyl hydrazide-based reducing agent may be a compound having a sulfonyl hydrazide substituent of Chemical Formula 1 in the present disclosure in which A may be any one in Chemical Formula 2 in the present disclosure.

摘要翻译： 提供了通过还原石墨烯氧化物制造石墨烯薄膜的方法和使用其制造光电器件的方法。 制造石墨烯薄膜的方法包括制备氧化石墨烯; 通过磺酰肼类还原剂还原氧化石墨烯来制备石墨烯; 通过将石墨烯分散在有机溶剂中制备石墨烯分散溶液; 并通过应用石墨烯分散溶液制造石墨烯薄膜。 磺酰肼类还原剂可以是在本公开内容中具有化学式1的磺酰肼取代基的化合物，其中A可以是本公开的化学式2中的任何一个。