公开(公告)号：US08803565B2

公开(公告)日：2014-08-12

申请号：US13064264

申请日：2011-03-15

申请人： Ho-jung Kim ,  Jae-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ki-ha Hong

发明人： Ho-jung Kim ,  Jae-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ki-ha Hong

IPC分类号： H03K17/16

CPC分类号： H03K17/163 ,  H03K17/284

摘要： A power device includes a switching device having a control terminal and an output terminal; and a driving circuit configured to provide a driving voltage to the control terminal such that a voltage between the control terminal and the output terminal remains less than or equal to a critical voltage. A rise time required for the driving voltage to reach a target level is determined according to current-voltage characteristics of the switching device. And, when the voltage between the control terminal and the output terminal exceeds the critical voltage, leakage current is generated between the control terminal and the output terminal.

摘要翻译： 功率器件包括具有控制端子和输出端子的开关器件; 以及驱动电路，被配置为向控制端子提供驱动电压，使得控制端子和输出端子之间的电压保持小于或等于临界电压。 根据开关装置的电流 - 电压特性来确定驱动电压达到目标电平所需的上升时间。 而且，当控制端子与输出端子之间的电压超过临界电压时，控制端子与输出端子之间产生漏电流。

公开(公告)号：US20110273221A1

公开(公告)日：2011-11-10

申请号：US13064264

申请日：2011-03-15

申请人： Ho-jung Kim ,  Jae-kwang Shin ,  Jae-Joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ki-ha Hong

发明人： Ho-jung Kim ,  Jae-kwang Shin ,  Jae-Joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ki-ha Hong

IPC分类号： H03K17/284 ,  H03K17/687

CPC分类号： H03K17/163 ,  H03K17/284

摘要： A power device includes a switching device having a control terminal and an output terminal; and a driving circuit configured to provide a driving voltage to the control terminal such that a voltage between the control terminal and the output terminal remains less than or equal to a critical voltage. A rise time required for the driving voltage to reach a target level is determined according to current-voltage characteristics of the switching device. And, when the voltage between the control terminal and the output terminal exceeds the critical voltage, leakage current is generated between the control terminal and the output terminal.

摘要翻译： 功率器件包括具有控制端子和输出端子的开关器件; 以及驱动电路，被配置为向控制端子提供驱动电压，使得控制端子和输出端子之间的电压保持小于或等于临界电压。 根据开关装置的电流 - 电压特性来确定驱动电压达到目标电平所需的上升时间。 而且，当控制端子与输出端子之间的电压超过临界电压时，控制端子与输出端子之间产生漏电流。

公开(公告)号：US08569769B2

公开(公告)日：2013-10-29

申请号：US13179859

申请日：2011-07-11

申请人： In-jun Hwang ,  Ki-ha Hong ,  Jong-seob Kim ,  Jae-Kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi

发明人： In-jun Hwang ,  Ki-ha Hong ,  Jong-seob Kim ,  Jae-Kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi

IPC分类号： H01L29/15

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer, source and drain electrodes on the barrier layer, a depletion layer on the barrier layer between the source and drain electrodes, and a gate electrode on the depletion layer. The barrier layer is recessed below the gate electrode and the depletion layer covers a surface of the recess and extends onto the barrier layer around the recess.

摘要翻译： 增强模式（E模式）高电子迁移率晶体管（HEMT）包括具有二维电子气体（2DEG）的沟道层，在沟道层中引起2DEG的势垒层，势垒层上的源极和漏极 ，源极和漏极之间的阻挡层上的耗尽层，以及耗尽层上的栅电极。 阻挡层凹陷在栅电极下方，耗尽层覆盖凹槽的表面并且延伸到围绕凹槽的阻挡层上。

公开(公告)号：US20120112202A1

公开(公告)日：2012-05-10

申请号：US13179859

申请日：2011-07-11

申请人： In-jun Hwang ,  Ki-ha Hong ,  Jong-seob Kim ,  Jae-Kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi

发明人： In-jun Hwang ,  Ki-ha Hong ,  Jong-seob Kim ,  Jae-Kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer, source and drain electrodes on the barrier layer, a depletion layer on the barrier layer between the source and drain electrodes, and a gate electrode on the depletion layer. The barrier layer is recessed below the gate electrode and the depletion layer covers a surface of the recess and extends onto the barrier layer around the recess.

摘要翻译： 增强模式（E模式）高电子迁移率晶体管（HEMT）包括具有二维电子气体（2DEG）的沟道层，在沟道层中引起2DEG的势垒层，势垒层上的源极和漏极 ，源极和漏极之间的阻挡层上的耗尽层，以及耗尽层上的栅电极。 阻挡层凹陷在栅电极下方，耗尽层覆盖凹槽的表面并且延伸到围绕凹槽的阻挡层上。

公开(公告)号：US08508194B2

公开(公告)日：2013-08-13

申请号：US12923857

申请日：2010-10-12

申请人： Ho-jung Kim ,  Jong-seob Kim ,  Jai-kwang Shin ,  Jae-joon Oh ,  Ki-ha Hong ,  In-jun Hwang ,  Hyuk-soon Choi

发明人： Ho-jung Kim ,  Jong-seob Kim ,  Jai-kwang Shin ,  Jae-joon Oh ,  Ki-ha Hong ,  In-jun Hwang ,  Hyuk-soon Choi

IPC分类号： G05F1/10

CPC分类号： H03K17/6871 ,  H02M1/08 ,  H02M3/158 ,  H02M3/337 ,  H02M2001/0074 ,  H03K2217/0081

摘要： Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage.

摘要翻译： 提供一种半导体器件，其可以包括具有负阈值电压的开关器件，以及电源端子和接地端子之间的驱动单元，并且提供用于驱动开关器件的驱动电压。 开关器件可以连接到具有大于从接地端子提供的接地电压的虚拟接地电压的虚拟接地节点，并且当驱动电压和虚拟接地电压之间的差大于负值时，可以导通 阈值电压。

公开(公告)号：US20110062448A1

公开(公告)日：2011-03-17

申请号：US12923266

申请日：2010-09-13

申请人： Ki-ha Hong ,  Jong-seob Kim ,  Jae-joon Oh ,  Jai-kwang Shin ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ho-jung Kim

发明人： Ki-ha Hong ,  Jong-seob Kim ,  Jae-joon Oh ,  Jai-kwang Shin ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ho-jung Kim

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer.

摘要翻译： 提供了场效应半导体器件及其制造方法，场效应半导体器件包括在第一半导体层的第一表面上的第二半导体层，以及分别在第二半导体层的两侧上的第一和第二第三半导体层 ，分别在第一和第二第三半导体层上的源极和漏极，以及在第一半导体层的第二表面上的栅电极。

公开(公告)号：US09450071B2

公开(公告)日：2016-09-20

申请号：US12923266

申请日：2010-09-13

申请人： Ki-ha Hong ,  Jong-seob Kim ,  Jae-joon Oh ,  Jai-kwang Shin ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ho-jung Kim

发明人： Ki-ha Hong ,  Jong-seob Kim ,  Jae-joon Oh ,  Jai-kwang Shin ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ho-jung Kim

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer.

摘要翻译： 提供了场效应半导体器件及其制造方法，场效应半导体器件包括在第一半导体层的第一表面上的第二半导体层，以及分别在第二半导体层的两侧上的第一和第二第三半导体层 ，分别在第一和第二第三半导体层上的源极和漏极，以及在第一半导体层的第二表面上的栅电极。

公开(公告)号：US20110221482A1

公开(公告)日：2011-09-15

申请号：US12923857

申请日：2010-10-12

申请人： Ho-jung Kim ,  Jong-seob Kim ,  Jai-Kwang Shin ,  Jae-joon Oh ,  Ki-ha Hong ,  In-jun Hwang ,  Hyuk-soon Choi

发明人： Ho-jung Kim ,  Jong-seob Kim ,  Jai-Kwang Shin ,  Jae-joon Oh ,  Ki-ha Hong ,  In-jun Hwang ,  Hyuk-soon Choi

IPC分类号： H03K3/01 ,  H03K17/00

CPC分类号： H03K17/6871 ,  H02M1/08 ,  H02M3/158 ,  H02M3/337 ,  H02M2001/0074 ,  H03K2217/0081

摘要： Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage.

摘要翻译： 提供一种半导体器件，其可以包括具有负阈值电压的开关器件，以及电源端子和接地端子之间的驱动单元，并且提供用于驱动开关器件的驱动电压。 开关器件可以连接到具有大于从接地端子提供的接地电压的虚拟接地电压的虚拟接地节点，并且当驱动电压和虚拟接地电压之间的差大于负值时，可以导通 阈值电压。

公开(公告)号：US08835985B2

公开(公告)日：2014-09-16

申请号：US13208671

申请日：2011-08-12

申请人： In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong

发明人： In-jun Hwang ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Ki-ha Hong

IPC分类号： H01L29/778 ,  H01L29/40 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/408 ,  H01L29/66462

摘要： According to an example embodiment, a power electronic device includes a first semiconductor layer, a second semiconductor layer on a first surface of the first semiconductor layer, and a source, a drain, and a gate on the second semiconductor layer. The source, drain and gate are separate from one another. The power electronic device further includes a 2-dimensional electron gas (2DEG) region at an interface between the first semiconductor layer and the second semiconductor layer, a first insulating layer on the gate and a second insulating layer adjacent to the first insulating layer. The first insulating layer has a first dielectric constant and the second insulating layer has a second dielectric constant less than the first dielectric constant.

摘要翻译： 根据示例性实施例，功率电子器件包括第一半导体层，第一半导体层的第一表面上的第二半导体层以及第二半导体层上的源极，漏极和栅极。 源极，漏极和栅极彼此分开。 电力电子设备还包括在第一半导体层和第二半导体层之间的界面处的二维电子气体（2DEG）区域，栅极上的第一绝缘层和与第一绝缘层相邻的第二绝缘层。 第一绝缘层具有第一介电常数，第二绝缘层具有小于第一介电常数的第二介电常数。

公开(公告)号：US20130032816A1

公开(公告)日：2013-02-07

申请号：US13431397

申请日：2012-03-27

申请人： In-jun Hwang ,  Hyuk-soon Choi ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  Ki-ha Hong ,  Jai-kwang Shin

发明人： In-jun Hwang ,  Hyuk-soon Choi ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  Ki-ha Hong ,  Jai-kwang Shin

IPC分类号： H01L29/20 ,  H01L21/335 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/7787

摘要： High electron mobility transistors (HEMTs) including a substrate and a HEMT stack on the substrate, the HEMT stack including a compound semiconductor layer that includes a 2-dimensional electron gas (2DEG), an upper compound semiconductor layer that has a polarization index higher than a polarization index of the compound semiconductor layer, and a source electrode, a drain electrode, and a gate that are disposed on the upper compound semiconductor layer. The substrate may be a nitride substrate that has a dielectric constant and a thermal conductivity higher than a dielectric constant and a thermal conductivity of a silicon substrate. The substrate may include an insulating layer that has a dielectric constant and a thermal conductivity higher than a dielectric constant and a thermal conductivity of the silicon substrate, a metal layer that is deposited on the insulating layer, and a plate that is attached to the metal layer.