公开(公告)号：US08569769B2

公开(公告)日：2013-10-29

申请号：US13179859

申请日：2011-07-11

申请人： In-jun Hwang ,  Ki-ha Hong ,  Jong-seob Kim ,  Jae-Kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi

发明人： In-jun Hwang ,  Ki-ha Hong ,  Jong-seob Kim ,  Jae-Kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi

IPC分类号： H01L29/15

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer, source and drain electrodes on the barrier layer, a depletion layer on the barrier layer between the source and drain electrodes, and a gate electrode on the depletion layer. The barrier layer is recessed below the gate electrode and the depletion layer covers a surface of the recess and extends onto the barrier layer around the recess.

摘要翻译： 增强模式（E模式）高电子迁移率晶体管（HEMT）包括具有二维电子气体（2DEG）的沟道层，在沟道层中引起2DEG的势垒层，势垒层上的源极和漏极 ，源极和漏极之间的阻挡层上的耗尽层，以及耗尽层上的栅电极。 阻挡层凹陷在栅电极下方，耗尽层覆盖凹槽的表面并且延伸到围绕凹槽的阻挡层上。

公开(公告)号：US20120112202A1

公开(公告)日：2012-05-10

申请号：US13179859

申请日：2011-07-11

申请人： In-jun Hwang ,  Ki-ha Hong ,  Jong-seob Kim ,  Jae-Kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi

发明人： In-jun Hwang ,  Ki-ha Hong ,  Jong-seob Kim ,  Jae-Kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Hyuk-soon Choi

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7787

摘要： An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer, source and drain electrodes on the barrier layer, a depletion layer on the barrier layer between the source and drain electrodes, and a gate electrode on the depletion layer. The barrier layer is recessed below the gate electrode and the depletion layer covers a surface of the recess and extends onto the barrier layer around the recess.

摘要翻译： 增强模式（E模式）高电子迁移率晶体管（HEMT）包括具有二维电子气体（2DEG）的沟道层，在沟道层中引起2DEG的势垒层，势垒层上的源极和漏极 ，源极和漏极之间的阻挡层上的耗尽层，以及耗尽层上的栅电极。 阻挡层凹陷在栅电极下方，耗尽层覆盖凹槽的表面并且延伸到围绕凹槽的阻挡层上。

公开(公告)号：US20130032816A1

公开(公告)日：2013-02-07

申请号：US13431397

申请日：2012-03-27

申请人： In-jun Hwang ,  Hyuk-soon Choi ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  Ki-ha Hong ,  Jai-kwang Shin

发明人： In-jun Hwang ,  Hyuk-soon Choi ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  Ki-ha Hong ,  Jai-kwang Shin

IPC分类号： H01L29/20 ,  H01L21/335 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/7787

摘要： High electron mobility transistors (HEMTs) including a substrate and a HEMT stack on the substrate, the HEMT stack including a compound semiconductor layer that includes a 2-dimensional electron gas (2DEG), an upper compound semiconductor layer that has a polarization index higher than a polarization index of the compound semiconductor layer, and a source electrode, a drain electrode, and a gate that are disposed on the upper compound semiconductor layer. The substrate may be a nitride substrate that has a dielectric constant and a thermal conductivity higher than a dielectric constant and a thermal conductivity of a silicon substrate. The substrate may include an insulating layer that has a dielectric constant and a thermal conductivity higher than a dielectric constant and a thermal conductivity of the silicon substrate, a metal layer that is deposited on the insulating layer, and a plate that is attached to the metal layer.

公开(公告)号：US20120088341A1

公开(公告)日：2012-04-12

申请号：US13178902

申请日：2011-07-08

申请人： Hyuk-soon Choi ,  Jung-hee Lee ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  In-jun Hwang ,  Ki-ha Hong ,  Ki-sik Im ,  Ki-won Kim ,  Dong-seok Kim

发明人： Hyuk-soon Choi ,  Jung-hee Lee ,  Jai-kwang Shin ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  In-jun Hwang ,  Ki-ha Hong ,  Ki-sik Im ,  Ki-won Kim ,  Dong-seok Kim

IPC分类号： H01L21/338

CPC分类号： H01L29/66462 ,  H01L21/0254 ,  H01L21/76237 ,  H01L29/0847 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/4236 ,  H01L29/7787

摘要： The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.

摘要翻译： 所述方法可以包括在衬底上形成第一材料层，增加第一材料层的电阻，以及在第一材料层上形成彼此间隔开的源图案和漏极图案，带隙为 源极和漏极图案大于第一材料层的带隙。

公开(公告)号：US09245947B2

公开(公告)日：2016-01-26

申请号：US13534730

申请日：2012-06-27

申请人： In-jun Hwang ,  Ki-ha Hong ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Jai-kwang Shin

发明人： In-jun Hwang ,  Ki-ha Hong ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Jai-kwang Shin

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/06 ,  H01L29/66 ,  H01L21/306 ,  H01L21/3065 ,  H01L29/20

CPC分类号： H01L29/0657 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L29/0653 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7782 ,  H01L29/7787

摘要： High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain.

摘要翻译： 包括漏极下面的空穴的高电子迁移率晶体管（HEMT）和制造HEMTS的方法包括去除漏极下方的衬底的一部分。

公开(公告)号：US08921890B2

公开(公告)日：2014-12-30

申请号：US13551217

申请日：2012-07-17

申请人： Hyuk-soon Choi ,  Jong-seob Kim ,  Jai-kwang Shin ,  Chang-yong Um ,  Jae-joon Oh ,  Jong-bong Ha ,  In-jun Hwang ,  Ki-ha Hong

发明人： Hyuk-soon Choi ,  Jong-seob Kim ,  Jai-kwang Shin ,  Chang-yong Um ,  Jae-joon Oh ,  Jong-bong Ha ,  In-jun Hwang ,  Ki-ha Hong

IPC分类号： H01L31/102

CPC分类号： H01L29/7813 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/41741 ,  H01L29/66734

摘要： According to example embodiments, a substrate structure may include a GaN-based third material layer, a GaN-based second material layer, a GaN-based first material layer, and a buffer layer on a non-GaN-based substrate. The GaN-based first material layer may be doped with a first conductive type impurity. The GaN-based second material layer may be doped with a second conductive type impurity at a density that is less than a density of the first conductive type impurity in the first GaN-based material layer. The GaN-based third material layer may be doped with a first conductive type impurity at a density that is less than the density of the first conductive type impurity of the GaN-based first material layer. After a second substrate is attached onto the substrate structure, the non-GaN-based substrate may be removed and a GaN-based vertical type semiconductor device may be fabricated on the second substrate.

摘要翻译： 根据示例实施例，衬底结构可以包括GaN基第三材料层，GaN基第二材料层，GaN基第一材料层和非GaN基衬底上的缓冲层。 GaN基第一材料层可以掺杂有第一导电类型的杂质。 GaN基第二材料层可以以小于第一GaN基材料层中的第一导电类型杂质的密度的密度掺杂第二导电型杂质。 GaN基第三材料层可以以比GaN基第一材料层的第一导电类型杂质的密度小的密度掺杂第一导电型杂质。 在将第二衬底附着到衬底结构上之后，可以去除非GaN基衬底，并且可以在第二衬底上制造GaN基垂直型半导体器件。

公开(公告)号：US09123740B2

公开(公告)日：2015-09-01

申请号：US13613677

申请日：2012-09-13

申请人： Hyuk-soon Choi ,  Jong-seob Kim ,  Jai-kwang Shin ,  Chang-yong Um ,  Jae-joon Oh ,  Jong-bong Ha ,  Ki-ha Hong ,  In-jun Hwang

发明人： Hyuk-soon Choi ,  Jong-seob Kim ,  Jai-kwang Shin ,  Chang-yong Um ,  Jae-joon Oh ,  Jong-bong Ha ,  Ki-ha Hong ,  In-jun Hwang

IPC分类号： H01L29/15 ,  H01L29/66 ,  H01L29/10 ,  H01L29/207 ,  H01L29/20 ,  H01L29/778 ,  H01L29/36

CPC分类号： H01L29/66462 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/7785 ,  H01L29/7787

摘要： According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer and a channel layer. The channel layer may include an effective channel region and a high resistivity region. The effective channel region may be between the high resistivity region and the channel supply layer. The high resistivity region may be a region into which impurities are ion-implanted. According to example embodiments, a method of forming a HEMT includes forming a device unit, including a channel layer and a channel supply layer, on a first substrate; adhering a second substrate to the device unit; removing the first substrate; and forming a high resistivity region by ion-implanting impurities into at least a portion of the channel layer.

摘要翻译： 根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道供应层和沟道层。 沟道层可以包括有效沟道区和高电阻率区。 有效沟道区可以在高电阻率区域和沟道供应层之间。 高电阻率区域可以是离子注入杂质的区域。 根据示例实施例，形成HEMT的方法包括在第一基板上形成包括沟道层和沟道供应层的器件单元; 将第二基板粘附到所述装置单元; 去除第一衬底; 以及通过将杂质离子注入到沟道层的至少一部分中而形成高电阻率区域。

公开(公告)号：US20130001587A1

公开(公告)日：2013-01-03

申请号：US13534730

申请日：2012-06-27

申请人： In-jun Hwang ,  Ki-ha Hong ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Jai-kwang Shin

发明人： In-jun Hwang ,  Ki-ha Hong ,  Jae-joon Oh ,  Jong-bong Ha ,  Jong-seob Kim ,  Hyuk-soon Choi ,  Jai-kwang Shin

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/20

CPC分类号： H01L29/0657 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L29/0653 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7782 ,  H01L29/7787

摘要： High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain.

摘要翻译： 包括漏极下面的空穴的高电子迁移率晶体管（HEMT）和制造HEMTS的方法包括去除漏极下方的衬底的一部分。

公开(公告)号：US08803565B2

公开(公告)日：2014-08-12

申请号：US13064264

申请日：2011-03-15

申请人： Ho-jung Kim ,  Jae-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ki-ha Hong

发明人： Ho-jung Kim ,  Jae-kwang Shin ,  Jae-joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ki-ha Hong

IPC分类号： H03K17/16

CPC分类号： H03K17/163 ,  H03K17/284

摘要： A power device includes a switching device having a control terminal and an output terminal; and a driving circuit configured to provide a driving voltage to the control terminal such that a voltage between the control terminal and the output terminal remains less than or equal to a critical voltage. A rise time required for the driving voltage to reach a target level is determined according to current-voltage characteristics of the switching device. And, when the voltage between the control terminal and the output terminal exceeds the critical voltage, leakage current is generated between the control terminal and the output terminal.

摘要翻译： 功率器件包括具有控制端子和输出端子的开关器件; 以及驱动电路，被配置为向控制端子提供驱动电压，使得控制端子和输出端子之间的电压保持小于或等于临界电压。 根据开关装置的电流 - 电压特性来确定驱动电压达到目标电平所需的上升时间。 而且，当控制端子与输出端子之间的电压超过临界电压时，控制端子与输出端子之间产生漏电流。

公开(公告)号：US20110273221A1

公开(公告)日：2011-11-10

申请号：US13064264

申请日：2011-03-15

申请人： Ho-jung Kim ,  Jae-kwang Shin ,  Jae-Joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ki-ha Hong

发明人： Ho-jung Kim ,  Jae-kwang Shin ,  Jae-Joon Oh ,  Jong-seob Kim ,  Hyuk-soon Choi ,  In-jun Hwang ,  Ki-ha Hong

IPC分类号： H03K17/284 ,  H03K17/687

CPC分类号： H03K17/163 ,  H03K17/284

摘要： A power device includes a switching device having a control terminal and an output terminal; and a driving circuit configured to provide a driving voltage to the control terminal such that a voltage between the control terminal and the output terminal remains less than or equal to a critical voltage. A rise time required for the driving voltage to reach a target level is determined according to current-voltage characteristics of the switching device. And, when the voltage between the control terminal and the output terminal exceeds the critical voltage, leakage current is generated between the control terminal and the output terminal.

摘要翻译： 功率器件包括具有控制端子和输出端子的开关器件; 以及驱动电路，被配置为向控制端子提供驱动电压，使得控制端子和输出端子之间的电压保持小于或等于临界电压。 根据开关装置的电流 - 电压特性来确定驱动电压达到目标电平所需的上升时间。 而且，当控制端子与输出端子之间的电压超过临界电压时，控制端子与输出端子之间产生漏电流。