公开(公告)号：US20160351436A1

公开(公告)日：2016-12-01

申请号：US14722910

申请日：2015-05-27

申请人： Honeywell International Inc.

发明人： Daniel Endean ,  Bob Martin ,  Robert D. Horning

IPC分类号： H01L21/762 ,  H01L29/06 ,  H01L21/68 ,  H01L21/02 ,  H01L21/324

CPC分类号： H01L21/76251 ,  H01L21/02052 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/2007 ,  H01L21/324 ,  H01L21/681 ,  H01L29/0649

摘要： A method of low temperature wafer bonding is provided. The method comprises: providing oxide to form a bonding layer on a deposition surface of at least one of two wafers, the bonding layer having a thickness in the range of 100 Angstroms to 500 Angstroms; soaking the wafers in a solution that makes bonding surfaces of the wafers hydrophilic; rinsing the wafers with water after soaking the wafers in the solution that makes bonding surfaces of the wafers hydrophilic; drying the wafers; optical-contact bonding the wafers with each other by bringing the bonding layers of the wafers in contact with each other to form a wafer pair; and annealing the wafer pair at a temperature less than or equal to 500° Celsius.

摘要翻译： 提供了一种低温晶片接合的方法。 该方法包括：提供氧化物以在两个晶片中的至少一个晶片的沉积表面上形成结合层，该结合层的厚度在100埃至500埃的范围内; 将晶片浸泡在使晶片的结合表面亲水的溶液中; 在将晶片浸泡在使晶片的结合表面亲水的溶液中之后用水冲洗晶片; 干燥晶片; 通过使晶片的结合层彼此接触来将晶片彼此光学接触接合，以形成晶片对; 并且在小于或等于500℃的温度下退火晶片对。